Evidence for quantum confinement effects in CdSe/ZnSe multilayer thin films prepared by the physical vapor deposition method

CdSe/ZnSe heterostructure multilayer thin films were prepared with different sublayer thicknesses of CdSe using the physical vapor deposition method. X-ray diffraction studies were used to calculate the average size of the particles and confirmed the (1 1 1) plane of ZnSe. Due to the stacking of alternate CdSe and ZnSe layers, stress was created in the multilayer systems. This results in quantum size effects. Experimentally measured energy values from (hν) vs. (αhν)² dependence confirm the presence of spin–orbit split in the valence band of CdSe. The calculated band gap energies are greater than that of bulk CdSe. Crystallite sizes (12–4 nm) were calculated based on the predictions of the effective mass approximation model (i.e. Brus model). Results show that the diameters of crystallites are smaller than the Bohr exciton diameter (11.2 nm) of CdSe. Upon particle size decrease, the photoluminescence peak is shifted from the green region to the blue region. Analysis shows that the sublayer thickness of CdSe material changes the properties of CdSe/ZnSe multilayer systems.     

Theoretical and numerical study of lamellar eutectoid growth influenced by volume diffusion

We investigate the lamellar growth of pearlite at the expense of austenite during the eutectoid transformation in steel. To begin with, we extend the Jackson–Hunt-type calculation (previously used to analyze eutectic transformation) to eutectoid transformation by accounting for diffusion in all the phases. Our principal finding is that the growth rates in the presence of diffusion in all the phases are different compared to the case when diffusion in growing phases is absent. The difference in the dynamics is described by a factor ’ρ’ which comprises the ratio of the diffusivities of the bulk and the growing phases, along with the ratios of the slopes of the phase coexistence lines. Thereafter, we perform phase-field simulations, the results of which are in agreement with analytical predictions. The phase-field simulations also reveal that diffusion in austenite as well as ferrite leads to the formation of tapered cementite along with an overall increase in the transformation kinetics as compared to diffusion in austenite (only). Finally, it is worth noting that the aim of present work is not to consider the pearlitic transformation in totality; rather it is to isolate and thereby investigate the influence of diffusivity in the growing phases on the front velocity.     

Strain-induced martensitic transformation in stainless steels: A three-dimensional phase-field study

A three-dimensional elastoplastic phase-field model is developed to study the microstructure evolution during strain-induced martensitic transformation in stainless steels under different stress states. The model also incorporates linear isotropic strain hardening. The input simulation data is acquired from different sources, such as CALPHAD, ab initio calculations and experimental measurements. The results indicate that certain stress states, namely uniaxial tensile, biaxial compressive and shear strain loadings, lead to single variant formation in the entire grain, whereas others, such as uniaxial compressive, biaxial tensile and triaxial strain loadings, lead to multivariant microstructure formation. The effects of stress states, strain rate as well as temperature on the mechanical behavior of steels are also studied. The material exhibits different yield stresses and hardening behavior under different stress states. The equivalent stress is higher at low strain rate, whereas a higher elongation is obtained at high strain rate. The deformation temperature mainly affects the hardening behavior of the material as well as the transformation, i.e. martensite volume fraction decreases with increasing temperature. Some of the typical characteristics of strain-induced martensite, such as the formation of thin elongated martensite laths, shear band formation and nucleation of martensite in highly plasticized areas, as well as at shear band intersections, are also observed.     

Radiation crosslinked polyvinyl alcohol/polyvinyl pyrrolidone/acrylic acid hydrogels: swelling,crosslinking and dye adsorption study

Iranian Polymer Journal - Hydrogels were produced from mixtures of polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP), and acrylic acid (AAc) using γ-radiation at doses of 3, 7, and...     

Performance Tuning and Reliability Analysis of the Electrostatically Configured Nanotube Tunnel FET with Impact of Interface Trap Charges

Silicon - This paper examines, an electrostatically configured Nano-Tube Tunnel Field-Effect Transistor (ED-NTTFET). During the fabrication process, different charges such as fixed charge, oxide...     

Design of Dual-Gate P-type IMOS Based Industrial Purpose Pressure Sensor

Silicon - In this treatise, we have proposed a Single Material Gate–Dual Gate Impact Ionization Metal Oxide Semiconductor (SMG DG-IMOS) based Pressure Sensor. The pressure sensor has the most...     

Design of an Ultra-Compact and Highly-Sensitive Temperature Sensor Using Photonic Crystal Based Single Micro-Ring Resonator and Cascaded Micro-Ring Resonator

Silicon - In the present report, a photonic crystal based micro-ring resonator (MRR) structure is proposed which is very compact in size and has very fast response and is employed for temperature...     

Analysis of Temperature Effect in Quadruple Gate Nano-scale FinFET

Silicon - Quadruple gate FinFET is a promising candidate among other multi-gate MOS devices due to it’s better scalability and higher short channel effect suppression capability in advanced...     

Artificial Intelligence System Approach for Optimization of Drilling Parameters of Glass-Carbon Fiber/Polymer Composites

Silicon - In recent times, the study on machining characteristics of combined (hybrid) fiber polymer composites has drawn a remarkable research attention because of its emerging industrial...     

A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application

Silicon - In this paper, AlGaN/GaN High Electron Mobility Transistor (HEMT) with stacked passivation (Diamond/SiN) is proposed and investigated. The implementation of stacked passivation in HEMT...