Memory Fault Modeling Trends: A Case Study

In recent years, embedded memories are the fastest growing segment of system on chip. They therefore have a major impact on the overall Defect per Million (DPM). Further, the shrinking technologies and processes introduce new defects that cause previously unknown faults; such faults have to be understood and modeled in order to design appropriate test techniques that can reduce the DPM level. This paper discusses a new memory fault class, namely dynamic faults, based on industrial test results; it defines the concept of dynamic faults based on the fault primitive concept. It further shows the importance of dynamic faults for the new memory technologies and introduces a systematic way for modeling them. It concludes that current and future SRAM products need to consider testability for dynamic faults or leave substantial DPM on the table, and sets a direction for further research.     

In vivo measurement of the brain and skull resistivities using an EIT-based method and realistic models for the head

In vivo measurements of equivalent resistivities of skull (rho(skull)) and brain (rho(brain)) are performed for six subjects using an electric impedance tomography (EIT)-based method and realistic models for the head. The classical boundary element method (BEM) formulation for EIT is very time consuming. However, the application of the Sherman-Morrison formula reduces the computation time by a factor of 5. Using an optimal point distribution in the BEM model to optimize its accuracy, decreasing systematic errors of numerical origin, is important because cost functions are shallow. Results demonstrate that rho(skull)/rho(brain) is more likely to be within 20 and 50 rather than equal to the commonly accepted value of 80. The variation in rho(brain)(average = 301 omega x cm, SD = 13%) and rho(skull)(average = 12230 omega x cm, SD = 18%) is decreased by half, when compared with the results using the sphere model, showing that the correction for geometry errors is essential to obtain realistic estimations. However, a factor of 2.4 may still exist between values of rho(skull)/rho(brain) corresponding to different subjects. Earlier results show the necessity of calibrating rho(brain) and rho(skull) by measuring them in vivo for each subject, in order to decrease errors associated with the electroencephalogram inverse problem. We show that the proposed method is suited to this goal.     

Ochratoxin A in dried vine fruit: method development and survey

A method is described for the determination of concentrations of the mycotoxin ochratoxin A in dried vine fruits (currants, raisins and sultanas) using acidic methanolic extraction,immunoaffinity chromatography clean-up and HPLC determination. The limit of detection was estimated as 0.2mug/kg, and recoveries of 63-77% were achieved at 5mug/kg. HPLC-mass spectrometric confirmation of the identity of ochratoxin was obtained. Ochratoxin A and aflatoxins were determined in 60 samples of retail dried vine fruits purchased in the United Kingdom. Ochratoxin A was found in excess of 0.2mug/kg in 19 of 20 currant, 17 of 20 sultana and 17 of 20 raisin samples examined, an overall incidence of 88% . The maximum level found was 53.6mug/kg. No aflatoxin was found in any sample analysed, using a method with a detection limit of 0.2mug/kg for each of aflatoxin B1, B2, G1 and G2.     

Intermodal tuning behavior of an etalon-tuned three-mirror TEA CO2 laser

The detailed tuning behavior within a single ro-vibrational line of a TEA CO₂ laser was studied by using a wedged etalon and a pyroelectric array. The fine tuning of the laser was performed by using a temperature controlled etalon inside a three-mirror resonator. As the laser wavelength was scanned at a constant rate, single-longitudinal-mode pulses were observed ~82% of the time. Two-mode operation occurred over a narrow tuning range near the midpoint between successive cavity modes. The detailed structure of the staircase-like mode-to-mode tuning curve and the corresponding output intensity variations are explained using a simple theoretical model     

比较ADC的孔径延迟

在通信设计和数据采集等一些应用中,比较多路模数转换器(ADC)之间的孔径延迟非常重要,必须对其进行测量.     

打破硬件至上的观念

正产品的硬件开发在今天尽管依然重要,但是它对于产品与众不同的帮助是微乎其微。目前设计价值以及设计的主要工作侧重在可决定竞争优势的软设计上,这也正是当今产品的真正IP——"器件智能性"。然而在传统的设计流程中,设计初始阶段的目标是创建可支持这些软件设计的硬件原型机。在硬件原型机没有制造出来之前我们不能进行任何有意义的软件开发。因此我们必须先做出一系列决定来确定所     

Modelling methodology for thermal analysis of hot solder dip process

The shift of electronics industry towards the use of lead-free solders in components manufacturing brought also the challenge of addressing the problem of tin whiskers. Manufacturers of high reliability and safety critical equipment in sectors such as defence and aerospace rely increasingly on the use of commercial-of-the-shelf (COTS) electronic components for their products and systems. The use of COTS components with lead-free solder plated terminations comes with the risks for their long term reliability associated with tin whisker growth related failures. In the case of leaded type electronic components such as Quad Flat Package (QFP) and Small Outline Package (SOP), one of the promising solutions to this problem is to “re-finish” the package terminations by replacing the lead-free solder coatings on the leads with conventional tin–lead solder. This involves subjecting the electronic components to a post-manufacturing process known as Hot Solder Dip (HSD). One of the main concerns for adopting HSD (refinishing) as a strategy to the tin whisker problem is the potential risk for thermally induced damage in the components when subjected to this process.     

为高速A/D转换器设计电源供应器

许多现今的应用装置都需要高速取样模拟数字转换器（ADC）的分辨率达到12位或是更高位数,这是因为较高的分辨率能够让用户开发出更为精确的系统量测。不幸的是．较高的分辨率也代表了系统将会对噪声更加的敏感。只要系统的分辨率提高1个位（例如从12位升至13位）,系统的敏感度就会以2的倍数增加。因此,在使用ADC进行设计时,设计厂商对于经常被遗忘的一种噪声源一系统电源供应的考虑就变得相当重要。     

Low temperature (< 100 °C) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu₂O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu₂O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu₂O films are reported. It is known from previously published work that the formation of pure Cu₂O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu₂O thin films (as opposed to CuO or mixed phase CuO/Cu₂O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu₂O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu₂O films with electrical resistivity ranging from 10² to 10⁴ Ω-cm, hole mobility of 1-10 cm²/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu₂O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu₂O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells.     

Native Liquid Chromatography and Mass Spectrometry to Structurally and Functionally Characterize Endo-Xylanase Proteoforms

Xylanases are of great value in various industries, including paper, food, and biorefinery. Due to their biotechnological production, these enzymes can contain a variety of post-translational modifications, which may have a profound effect on protein function. Understanding the structure–function relationship can guide the development of products with optimal performance. We have developed a workflow for the structural and functional characterization of an endo-1,4-β-xylanase (ENDO-I) produced by Aspergillus niger with and without applying thermal stress. This workflow relies on orthogonal native separation techniques to resolve proteoforms. Mass spectrometry and activity assays of separated proteoforms permitted the establishment of structure–function relationships. The separation conditions were focus on balancing efficient separation and protein functionality. We employed size exclusion chromatography (SEC) to separate ENDO-I from other co-expressed proteins. Charge variants were investigated with ion exchange chromatography (IEX) and revealed the presence of low abundant glycated variants in the temperature-stressed material. To obtain better insights into the effect on glycation on function, we enriched for these species using boronate affinity chromatography (BAC). The activity measurements showed lower activity of glycated species compared to the non-modified enzyme. Altogether, this workflow allowed in-depth structural and functional characterization of ENDO-I proteoforms.