Stabilization of singularly perturbed fuzzy systems

This paper presents some novel results for stabilizing singularly perturbed (SP) nonlinear systems with guaranteed control performance. By using Takagi-Sugeno fuzzy model, we construct the SP fuzzy (SPF) systems. The corresponding fuzzy slow and fast subsystems of the original SPF system are also obtained. Two fuzzy control designs are explored. In the first design method, we propose the composite fuzzy control to stabilize the SPF subsystem with H/sup /spl infin// control performance. Based on the Lyapunov stability theorem, the stability conditions are reduced to the linear matrix inequality (LMI) problem. The composite fuzzy control will stabilize the original SP nonlinear systems for all /spl epsiv//spl isin/(0,/spl epsiv//sup */) and the upper bound /spl epsiv//sup */ can be determined. For the second design method, we present a direct fuzzy control scheme to stabilize the SP nonlinear system with H/sup /spl infin// control performance. By utilizing the Lyapunov stability theorem, the direct fuzzy control can guarantee the stability of the original SP nonlinear systems for a given interval /spl epsiv//spl isin/[/spl epsiv/_,/spl epsiv/~]. The stability conditions are also expressed in the LMIs. Two SP nonlinear systems are adopted to demonstrate the feasibility and effectiveness of the proposed control schemes.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Verification structures for transmission line pulse measurements

Test structures intended for performance verification of transmission line pulse (TLP) systems have been designed and tested. They consist of simple resistors in either copper or silicide clad polysilicon. The copper structures proved unsuitable due to excess heating and melting of any reasonable geometry. The silicide clad polysilicon proved more successful. A simple model of resistive heating accounts for observed nonlinearity in the structures under high current stress. The availability of a verification structure on wafer ensures the proper performance of the full measurement system, including contact to the wafer and the pad structure, ensuring valid TLP measurements.     

Comments, with reply, on `Passive equalization of semiconductordiode laser frequency modulation' by S.B. Alexander et al

Some flaws in a recent article by S.B. Alexander et al. (ibid., vol.7, no.1, p.11-23, Jan. 1989) on the theory of equalization of FM response of a laser diode using passive filters are noted. An error has occurred as a result of assuming a constant C as a positive instead of negative. When C is negative and large, the equalization network cannot be realized with passive networks. Also the simulated time waveform shown in the article for the optical frequency of an equalized laser does not show some spikes which are expected theoretically. The spikes occur as a result of an imperfect equalization provided by the proposed passive filters that were realized assuming C as positive. In replying the original author feels that the comments and observations result simply from attempting to extend the simple FM transfer-function model far beyond its limits while trying to introduce unnecessary theoretical rigor     

Delamination Analysis for Laminated Composites. II: Numerical Verification

A validation of the delamination analysis models developed in a companion paper is provided through comparisons of predictions with finite‐element and elasticity solutions. The models are applied to the analysis of composite compression specimens reinforced with end tabs. An elasticity solution for the gage section of the specimens is developed. A comparison of the characteristic roots shows that the predictions of the models include the material and geometric parameters that control the behavior, and the roots corresponding to the basic stretching and bending modes are accurately predicted. The stress distribution at the interface between tabs and specimen is in good agreement with a finite‐element simulation. The interlaminar shear and peel stresses show an exponential increase with a maximum intensity at the free edges of the tabs. The behavior of previously tested specimens is explained; and practical guidelines for specimen design are provided to avoid unwanted extraneous modes of failure. The influence of the deformation modes associated with each model is investigated. An assessment of the accuracy and level of complexity is presented.     

Structure determination of CaMgGeO4

The crystal structure of CaMgGeO₄ is described. CaMgGeO₄, M_r = 200.9, orthorhombic, Pnam, A = 11.285(5) Å, B = 5.016(2) Å, C = 6.435(2) Å, V = 364.36 ų, Dx = 3.664 Mg/m³.λ(MoK_a = 0.71069 Å, F(000) = 384, room temperature, final R = 0.045 for 1752 observed reflections. The structure is isomorphous with CaMgSiO₄ (monticellite).     

Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

Designing and prototyping data-intensive applications in the Logresand Algres programming environment

The authors present an environment and a methodology for the design and rapid prototyping of data-intensive software applications, i.e., applications which perform substantial retrieval and update activity on persistent data. In the approach, the application is formally specified using Logres, a database language which combines object-oriented data modeling and rule-based programming. These specifications are translated into Algres, an extended relational algebra, thus yielding a rapid executable prototype. Algres programs embedded into a conventional programming language interface may be converted to conventional programs operating on a commercial relational system. This methodology helps automate the conversion from declarative requirements to imperative code, performing several tasks fully automatically and reducing the probability of human errors, while integrity constraints and application specifications are expressed in a declarative language, at a very high level of abstraction