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91.
I. I. Abramov I. A. Goncharenko S. A. Ignatenko A. V. Korolev E. G. Novik A. I. Rogachev 《Russian Microelectronics》2003,32(2):97-104
The concept and structure of the NANODEV simulation software are described. NANODEV deals with nanoelectronic devices that exploit single-electron tunneling, resonant tunneling, or quantum interference. It can use both simplified and sophisticated models and enables one to evaluate a wide variety of devices and configurations. The capabilities of NANODEV are illustrated by examples. 相似文献
92.
Demiguel S. Giraudet L. Joulaud L. Decobert J. Blache F. Coupe V. Jorge F. Pagnod-Rossiaux P. Boucherez E. Achouche M. Devaux F. 《Lightwave Technology, Journal of》2002,20(12):2004-2014
The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes. 相似文献
93.
A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/. 相似文献
94.
95.
A spacecraft in a plasma builds up charge on all the dielectric surfaces and interfaces. Once the net charge exceeds the dielectric breakdown of the material, a discharge occurs. One of the more susceptible pieces of equipment is the antenna/receiver system. The radiated E-field may be strong enough to create an ambiguous signal which may be misinterpreted by the system electronics and cause a system malfunction. A technique is developed to monitor the radiated E-field of materials discharging in an electron environment, using vacuum chambers for measuring the material discharges which are made of highly reflective materials. These chambers affect the radiated E-field due to multiple reflections from the walls. The technique developed defines a method for correcting the effects caused by the measurement facilities. The methodology is: monitor the radiated E-field with a broadband dipole antenna, and digitize the radiated signal as a function of time. Determine the frequency response of the radiated E-field using an FFT algorithm. Measure the transmission and reflection characteristics of the two-port network inside the measurement chamber, and determine the impedance network from the measured E-parameters across the frequency band of interest. Transform the measured E-field frequency response through the impedance network to obtain the frequency response of the actual radiated discharge current. Find the inverse FFT of this response to obtain the actual radiated discharge current response. This technique aids in the prediction of the E-field coupling into receive antennas on-board actual satellites 相似文献
96.
S V Bhat 《Bulletin of Materials Science》1994,17(7):1271-1285
When examined using continuous wave electron paramagnetic resonance and nuclear magnetic resonance spectrometers, the highT
c superconductors give rise to intense, low field, ‘non-resonant’ absorption signals in the superconducting state. This phenomenon
can be used as a highly sensitive, contactless technique for the detection and characterization of superconductivity even
in samples containing only minute amounts of the superconducting phase. Further, it can also be applied to the determination
of material parameters of interest such asJ
c andH
c2 in addition to being a powerful way of distinguishing between weak-link superconductivity and bulk superconductivity. The
details of these aspects are discussed. 相似文献
97.
98.
A.S. Fomichev I. David S.M. Lukyanov Yu.E. Penionzhkevich N.K. Skobelev O.B. Tarasov 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1994,350(3):605-607
The mass and charge identification of secondary particles with Z < 4 by a large CsI(T1) scintillation detector is performed using pulse shape analysis and time-of-flight methods. The dependence of the light output on E, A and Z is studied in the energy range of 1–20 MeV/A and special attention is paid to the integration time of the photomultiplier anode signal. It is found that the behaviour of the calibration curves strongly depends on the choice of the integration time interval. 相似文献
99.
Carroll R.D. Merritt S.W. Branciforte E.J. Tanski W.J. Cullen D.E. Sacks R.N. 《IEEE transactions on ultrasonics, ferroelectrics, and frequency control》1994,41(3):416-418
Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output signal comprising an RF carrier at the SAW frequency, amplitude modulated by the sampled input signal which has been delayed by a period proportional to the output electrodes distance from the input diode. The output of the NDS electrode structure is subsequently demodulated to provide the base-band signal 相似文献
100.