首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   577032篇
  免费   6778篇
  国内免费   1533篇
电工技术   10396篇
综合类   390篇
化学工业   87684篇
金属工艺   27140篇
机械仪表   19876篇
建筑科学   11604篇
矿业工程   4939篇
能源动力   14289篇
轻工业   35677篇
水利工程   7255篇
石油天然气   16917篇
武器工业   36篇
无线电   62498篇
一般工业技术   126390篇
冶金工业   98013篇
原子能技术   16423篇
自动化技术   45816篇
  2021年   5542篇
  2020年   4279篇
  2019年   5435篇
  2018年   9780篇
  2017年   9972篇
  2016年   10642篇
  2015年   6258篇
  2014年   10576篇
  2013年   26884篇
  2012年   16206篇
  2011年   21268篇
  2010年   17069篇
  2009年   19217篇
  2008年   19655篇
  2007年   19225篇
  2006年   16719篇
  2005年   14883篇
  2004年   14304篇
  2003年   14090篇
  2002年   13393篇
  2001年   13215篇
  2000年   12599篇
  1999年   12583篇
  1998年   29758篇
  1997年   21098篇
  1996年   16111篇
  1995年   12227篇
  1994年   10910篇
  1993年   11033篇
  1992年   8365篇
  1991年   8044篇
  1990年   8128篇
  1989年   7686篇
  1988年   7365篇
  1987年   6729篇
  1986年   6522篇
  1985年   7223篇
  1984年   6781篇
  1983年   6241篇
  1982年   5789篇
  1981年   5906篇
  1980年   5648篇
  1979年   5770篇
  1978年   5878篇
  1977年   6356篇
  1976年   7796篇
  1975年   5207篇
  1974年   5117篇
  1973年   5216篇
  1972年   4546篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
991.
992.
Martensite transformations proceeding in mechanically loaded TiNi-based alloys account for an “anomalous” character of the acoustic emission from the material, whereby cyclic transformations during the growth of mechanical stress in the course of the direct transition is accompanied by an increase, rather than by a decrease, in the acoustic emission energy. This behavior of the acoustic emission is evidence of a significant influence of the external stresses on the martensite transformations and the related energy dissipation process.  相似文献   
993.
The state of the surface of n-GaAs crystals upon high-vacuum microwave plasmachemical (HVMWPC) etching in various gas mixtures and the influence of the semiconductor surface condition on the photoelectric characteristics of related metal-semiconductor-metal structures with double Schottky barrier (MSMDSB structures) are investigated. Dependence of the HVMWPC etching rate of the GaAs surface on the gas mixture composition and substrate temperature is determined. It is shown that the HVMWPC etching regime strongly influences the photoelectric properties of MSMDSB structures: the treatment can lead to either growth or drop in photosensitivity of the samples. Optimum etching regimes are established for which good semiconductor surface quality and high photosensitivity of the MSMDSB structures are retained at a high etching rate.  相似文献   
994.
A Linear Cross-Coupled Control System for High-Speed Machining   总被引:4,自引:0,他引:4  
We present a linear cross-coupled controller to improve highspeed contouring accuracy independently of tracking accuracy in a biaxial machine tool feed drive servomechanism. Unlike conventional cross-coupled controllers, the cross-coupled controller presented here is a linear system, so it is very easy to perform the stability and steady-state error analysis, and to optimise the controller parameters. The proposed controller is evaluated experimentally on a CNC LOM machine and compared to an uncoupled controller and a conventional cross-coupled controller. Controller performance is evaluated for a circular contour at a feedrate of 30 m min _1 . The experimental results show that the proposed controller can greatly reduce the contour error at large feedrates. The linear cross-coupled controller is simple to implement and is practical.  相似文献   
995.
996.
Applications of the additive accumulation of damages (AAD) or the accelerated failure time (AFT) and the proportional hazards (PH) models in accelerated life testing with step-stresses are discussed. A new model including AAD and PH models is proposed. It is more reasonable than the PH model and wider then the AAD model. Constructing the maximum likelihood function is discussed  相似文献   
997.
Metal Science and Heat Treatment -  相似文献   
998.
999.
A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection  相似文献   
1000.
Reliability of thermomechanical simulations is critically linked to the accuracy of the mechanical properties that govern the behaviour of structure, like Young's modulus (E) and coefficient of thermal expansion (CTE). For many cases, the values found in literatures are dealing with bulk properties without detailed information on temperature effects. To address such issues, it is necessary to measure the materials parameters as a function of temperature. The measurement of CTE is usually accomplished by evaluating the thermal deflections of a subjected material layer deposited on a substrate, providing that E is known at a specific temperature of experiment. A bilayer method, based on theory of elasticity, is proposed to determine both E and CTE for a given temperature with a good resolution. This paper presents the theoretical analysis, the design and process of the microsystem test structures, and the main calculation results.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号