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排序方式: 共有10000条查询结果,搜索用时 15 毫秒
991.
Tour J.M. Van Zandt W.L. Husband C.P. Husband S.M. Wilson L.S. Franzon P.D. Nackashi D.P. 《Nanotechnology, IEEE Transactions on》2002,1(2):100-109
Molecular electronics seeks to build electrical devices to implement computation - logic and memory - using individual or small collections of molecules. These devices have the potential to reduce device size and fabrication costs, by several orders of magnitude, relative to conventional CMOS. However, the construction of a practical molecular computer will require the molecular switches and their related interconnect technologies to behave as large-scale diverse logic, with input/output wires scaled to molecular dimensions. It is unclear whether it is necessary or even. possible to control the precise regular placement and interconnection of these diminutive molecular systems. This paper describes genetic algorithm-based simulations of molecular device structures in a nanocell where placement and connectivity of the internal molecular switches are not specifically directed and the internal topology is generally disordered. With some simplifying assumptions, these results show that it is possible to use easily fabricated nanocells as logic devices by setting the internal molecular switch states after the topological molecular assembly is complete. Simulated logic devices include an inverter, a NAND gate, an XOR gate and a 1-bit adder. Issues of defect and fault tolerance are addressed. 相似文献
992.
993.
994.
HBM ESD tests on two types of 0.6 μm DRAM devices showed that internal circuit or output driver failures would occur after the input or I/O pins were ESD stressed negative with respect to Vcc at ground. These failures occurred at lower than expected ESD stress voltages due to power-up circuit interactions that either turned-on unique internal parasitic ESD current paths or disrupted the normal operation of the output pin’s ESD protection circuit. ESD analysis found there exists a set of power-up sensitive circuits and if placed near a Vcc bond pad can result in low voltage ESD failures. 相似文献
995.
After the liberalization of the Japanese telecommunications market in 1985, the market went through a first phase of competition, which focused on domestic telephony services, in both the long distance (domestic and international) and mobile segments. However, the growth of the Internet and the full digitalization of NTT's telecommunications network are ushering in a digital era and a second phase of competition. This article describes the current Japanese telecommunications market and the direction it is taking by referring to key statistical indicators 相似文献
996.
H.U. Khan K.M. Agrawal M. Anwar S.P. Nautiyal B.S. Rawat 《Petroleum Science and Technology》1998,16(1):145-166
Lubricating oil base stocks differ greatly in their chemical composition and consequently in their physical properties and applications. Influence of waxes and various hydrocarbon type constituents viz saturates and aromatic components on the viscosity and shear stress as a function of temperature in different lube oil base stocks has been studied in the present paper. 相似文献
997.
S. F. Pankina V. V. Chebotaev V. A. Il'ichev V. P. Petrukhin I. V. Kolybin 《Soil Mechanics and Foundation Engineering》1998,35(2):55-60
A general concept is cited for the design of an underground transportation tunnel in the Lefortovo District. Attention is
focused on problems of the tunnel's layout in plan and profile, the layout of sections, and selection of the driving technology.
Results are presented for the numerical modeling of variations in the stress—strain state of the soil mass, which are associated
with the tunnel's installation. A set of measures to protect existing architectural monuments is proposed.
Translated from Osnovaniya, Fundamenty i Mekhanika Gruntov, No. 2, pp. 17–21, March–April, 1998. 相似文献
998.
由进口电性能仪配上自制的高温系统,计算机自动采集数据,配置成一套高低温电性参数测定装置,该装置的特点是,升温快,炉体小巧,炉芯可更换盛液氮装置,屏蔽良好,等温区长,温工及参数测量精确可靠。 相似文献
999.
液相添加剂对PTCR陶瓷电性能的影响 总被引:3,自引:2,他引:1
液相添加剂AST(Al2O3+SiO2+TiO2)对BaTiO3陶瓷材料电性能的影响很大,随着Al2O3含量的增加,材料的电性能降低;SiO2、TiO2的物理特性对材料电性能影响较大;过量TiO2对材料PTC效应有重要影响,适当过量TiO2含量,可得到性能优良的PTCR陶瓷。 相似文献
1000.
The bit error rate (BER) analysis of a direct-sequence code-division multiple-access (DS-CDMA) cellular system over a Rayleigh-fading channel often results in complicated expressions even though the Gaussian approximation is applied. A combined probability density function (pdf) approach for the forward link and a mean-method technique for the reverse link are proposed to significantly reduce the computational complexity. The simplified BER expressions are derived and yield accurate results 相似文献