Grain boundary resistivity in Y-TZP materials as a function of thermal history

Grain-boundary resistivity in yttria-containing tetragonal zirconia polycrystalline (Y-TZP) materials dominates the total resistivity. Impedance measurements combined with microstructural studies suggest that post-sintering heat treatments (in particular the cooling rate) influence the location of the grain-boundary phase which, in turn, has a significant effect on the grain-boundary resistivity. Higher cooling rates from the sintering temperature lead to reduction in the grain-boundary resistivity. In both alumina-containing and relatively pure tetragonal zirconia polycrystals, post-sintering heat treatments have a less conspicuous effect. The activation energy associated with the grain-boundary resistivity was independent of the post-sintering heat treatments but was 25 to 30 kJ mol^–1 higher than that for the oxygen-ion conduction within the grains at low temperatures.     

Craze yielding and fracture mechanism in PE/PS/PE laminated films

The change in polystyrene (PS) layer thickness, which has been simultaneously determined during post-yield deformation, shows that crazing is the basic mechanism of toughening in all laminated films, and that shear deformation supplements the contribution of crazing especially for samples with high polyethylene (PE) volume fractions. Crazes formed in PS layers in the laminated films are slender and regular compared with the short and lenticular crazes formed in bulk PS film. When PE volume fraction increased, craze advance speed decreased because of the reduction of the stress concentration effect at craze tips. The life-time of the first mature craze to be formed at a given strain rate increased with PE volume fraction because the PE supporting the mature crazes could effectively inhibit craze rupture and blunt out the propagating crack by absorbing the stored elastic energy in the PS layer that would have been dissipated as fracture surface energy.     

Study of dielectric properties of RbNO3 single crystals

Dielectric properties, dielectric constant (k), dielectric loss (tan δ) and a.c. conductivity (σ) in the solution-grown single crystals of RbNO₃ are presented from room temperature to about 200°C covering the frequency range 10² to 10⁵ Hz. A broad peak observed in tan δ-frequency data between 10³ and 10⁵Hz is thought to be due to impurity-vacancy dipoles. The sudden rise of three parameters near 160°C is attributed to the known phase transition from trigonal to CsCl structure.