Tunable twin-guide (TTG) distributed feedback (DFB) laser with over 10 nm continuous tuning range

By exploiting electronic and thermal tuning by forward and backward biasing the tuning region, a record continuous tuning range of 11nm has been achieved with an improved strained-layer (SL) multiquantum-well (MQW) TTG DFB laser at 1.55 mu m wavelength. Over a wavelength range of 9.2nm an optical power above 1mW and a spectral linewidth below 30MHz can be maintained with 400 mu m long devices.<>     

Surface losses in transmission lines

Two derivations of the loss parameter R, entirely from wave considerations in the presence of a metallic interface, are presented. R, which represents surface losses, occurs in transmission line equations for propagation of the voltage across the plates and of the current in the plates. Explanation of the surface losses involves some radiation of the interior fields into the metallic surfaces that absorb electromagnetic energy, and that ultimately convert it into ohmic losses (heat). Although the approach may restrict the derivation to a planar interface, i.e., to a parallel-plate transmission line, that restriction is not so essential that it cannot be softened     

Unifiable scheduling and allocation for minimizing system cycletime

This paper describes a new scheduling and allocation algorithm which optimizes a datapath-controller system for clock cycle time. The cycle time of a VLSI system depends not only on the characteristics of the datapath and controller in isolation but also on the interactions between them. A datapath may impose both arrival time constraints on controller inputs and departure time constraints on controller outputs. Late-arriving controller inputs may be generated by complex datapath functions, such as ALU carry-out, while early-departure controller outputs may be required to control slow datapath units. If the controller is not designed taking into account arrival and departure times, it may unnecessarily put control logic on the critical timing path. Our synthesis heuristic, which can be used in conjunction with other scheduling heuristics, identifies critical interactions between datapath and controller and reallocates/reschedules them to reduce system cycle time during high-level synthesis. Experimental results show that a unifiable scheduling and allocation (USA) can substantially improve system cycle time with only small area penalties     

Evaluation of Atmospheric and Vacuum Residues Using Molecular Distillation and Optimization

The term atmospheric residue describes the material at the bottom of the atmospheric distillation tower having a lower boiling point limit of about 340°C; the term vacuum residue (heavy petroleum fractions) refers to the bottom of the vacuum distillation, which has an atmospheric equivalent boiling point (AEBP) above 540°C. In this work, the objective is to evaluate the behavior of different kinds of Brazilian atmospheric and vacuum residues using molecular distillation. The Falling Film Molecular Distillator was used. For the results obtained through this process, a significant range of temperature can be explored avoiding the thermal decomposition of the material. So these results are very important to the refinery decisions and improvements. The Experimental Factorial Design results showed that the temperature has more influence on the process than the feed flow rate, when a higher percentage of distillate is required.     

Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25μm Ti-silicided poly lines

In this paper, do and low frequency noise measurement results on Ti-silicided poly lines are presented and analysed. Besides Raman scattering [1], low frequency noise analysis gives additional information on the presence and the spatial distribution of the high resistive C49 phase in the silicide line. The low frequency noise is strongly dependent on whether or not the distribution of the C49 phase is uniform or spotted-like. The experimental results agree with our model for a uniform C49 phase distribution over the silicided line. A spotted-like distribution of the C49 phase, which causes non-uniform current densities, can not explain the observed noise behaviour.     

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al₂O₃ layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al₂O₃ are presented, too. With this process, surface recombination velocities of 500–1000 cm/s have been attained on mc-Si wafers.     

Capacitively coupled transmission line pulsing cc-TLP––a traceable and reproducible stress method in the CDM-domain

This paper describes a new test method called capacitively coupled transmission line pulsing cc-TLP. It is applied to different test circuits which were mounted on specially designed package emulators with a defined background capacitance. The test results are compared with the ESD thresholds obtained by CDM tests. The cc-TLP results correlate well with the CDM data.     

InAs/GaInAs quantum dot DFB lasers emitting at 1.3 μm

Singlemode operation of 1.3 μm InAs/GaInAs quantum dot lasers has been achieved using the concept of complex coupled distributed feedback. Mode selection was realised by laterally patterned metal gratings. At room temperature the lasers show stable singlemode emission with sidemode suppression ratios of up to 55 dB, threshold currents as low as 17 mA and output powers of up to 8 mW under continuous wave operation     

Full-wafer technology-A new approach to large-scale laserfabrication and integration

A concept for full-wafer processing (FWP) and full-wafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented. The approach is based on chemically assisted ion beam etching for the laser-mirror formation. Record values for mirror scattering, optimum mirror reflectivity, and equivalence to cleaved mirrors in terms of laser threshold and efficiency have been achieved. Promising results for uniformity and reproducibility for major laser diode characteristics on processed 2-in wafers have been found. The FWP technology has been extensively used for designing test sites to determine various materials, process, and laser parameters, such as sheet resistance, ridge dimensions, lithographic alignment errors, mirror surface leakage, etc     

On the Probability of Undetected Error for Linear Block Codes

The problem of computing the probability of undetected error is considered for linear block codes used for error detection. The recent literature is first reviewed and several results are extended. It is pointed out that an exact calculation can be based on either the weight distribution of a code or its dual. Using the dual code formulation, the probability of undetected error for the ensemble of all nonbinary linear block codes is derived as well as a theorem that shows why the probability of undetected error may not be a monotonic function of channel error rate for some poor codes. Several bounds on the undetected error probability are then presented. We conclude with detailed examples of binary and nonbinary codes for which exact results can be obtained. An efficient technique for measuring an unknown weight distribution is suggested and exact results are compared with experimental results.