Percutaneous transluminal angioplasty of an innominate artery occlusion

A middle-aged woman presented with recent-onset left hemiparesis and right subclavian steal syndrome. She was found to have an obstructed innominate artery. We successfully performed balloon angioplasty of the occluded innominate artery and encountered no complications during follow-up of currently 8 months.     

Screen‐printed biosensor for allergens

Allergen levels in indoor environments, leading to many diseases, eg asthma, rhinitis and conjunctivitis, affect a large and increasing fraction of the population. A quite effective and inexpensive method of a rough but very rapid overall assessment of total allergen level in the environment has been developed. The method involved estimation of protein in allergen extracts by screen‐printed electrodes using two different techniques. The biosensor comprised a rhodinised carbon working electrode, a silver/silver chloride reference electrode and a carbon counter electrode. In the first method the enzyme protease reacted with allergen protein to release amino acid, which produced hydrogen peroxide in the presence of amino acid oxidase. This was detected amperometrically. The second method used potassium bromide as electrolyte and the electrode was subjected to dual potential. Bromine, released due to electrolysis at higher potential, was consumed by the allergen protein at lower potential. In the first method, a unique technique was used to microencapsulate the enzyme protease and immobilise it on the surface of the electrode by in‐situ polymerisation to avoid contact with the amino acid oxidase. A total of seven allergens were tested and the results gave a good correlation with the standard protein measurement method. Environmental specimens from indoors, schools and workplaces can be evaluated for the aeroallergens produced by dust mites, animal hairs, cockroach debris, pollens, etc as a means of determining the exposure risk. Copyright © 2005 Society of Chemical Industry     

Evaluation of NDT methods for detection of prestressing steel damage at post-tensioned concrete structures

For an assessment of the risk potential of existing structures, where in the case of prestressing steel damage the load-bearing capacity could be significantly affected, non-destructive testing techniques which enable reliable evaluation of the condition of the prestressing steels are of utmost importance. During the demolition of a post-tensioned concrete bridge in Berlin where damage of prestressing wires due to hydrogen-induced stress corrosion cracking were found in former investigations, parts of the girders of the bridge superstructure could be taken out. After non-destructive investigations by means of two testing techniques based on magnetic leakage flux measurement and one technique based on electromagnetic resonance measurement, subsequent removal of the concrete cover up to the ducts, opening the ducts and evaluation of the prestressing steels allowed a verification of the results obtained by the NDT methods. From the results it can be concluded that areas with fractures of several wires can be detected by the two techniques based on magnetic leakage flux measurement.     

Tunneling through Thin Oxides—New Insights from Microscopic Calculations

In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO₂ gate oxides using microscopic models of Si[100]-SiO₂-Si[100] heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.     

Effect of bipolar turn-on on the static current-voltagecharacteristics of scaled vertical power DMOSFET's

The parasitic bipolar transistor inherent in the power vertical Double Diffused MOSFET (DMOSFET) structure can have a significant impact on its performance and reliability. Selectively formed TiSi₂ films on source contacts were used to reduce the contact resistance to n ⁺ source diffusion. These devices exhibit “kinks” in the output I-V characteristics. High contact resistance of TiSi₂ to moderately doped p-body diffusion causes high output conductance. Detailed two-dimensional numerical simulations are used to investigate the effect of the parasitic bipolar transistor on the static characteristics of scaled silicided DMOSFET's. The high contact resistance of TiSi₂-p-body interface leads to a floating potential and causes significant reduction in the MOS gate threshold voltage and results in a premature bipolar turn-on. It is shown that the parasitic bipolar turn-on places an important constraint on the scalability of the device into the submicron regime. A novel self-aligned DMOSFET structure with a shallow diffused p⁺ region is shown to eliminate this effect. Numerical simulations are shown to be in excellent agreement with the measured data at various temperatures