NO/cGMP pathway is involved in exocrine secretion from rat pancreatic acinar cells

OBJECTIVE: To identify factors associated with the initiation of breast-feeding in a predominantly Puerto Rican population living in inner-city Hartford, Conn. DESIGN: Retrospective study of 144 Latino women (mean +/- standard deviation age = 26.3 +/- 5.7 years) with children at least 1 year old but younger than 6 years old (mean +/- standard deviation age = 3.0 +/- 1.2 years) at the time of the survey. Women were recruited from agencies sponsoring health programs for mothers and children. They were interviewed in their homes (69%) or at the Hispanic Health Council, Hartford, Conn (31%). SUBJECTS/SETTING: Low-income Latino women who had at least 1 preschooler at the time of the interview. The women lived in inner-city Hartford, and the overwhelming majority were Puerto Rican and received welfare assistance and food stamps. Seventy-eight percent of the women chose to be interviewed in Spanish; the other 22% were interviewed in English. STATISTICAL ANALYSES: Explanatory variables that related to breast-feeding initiation (P < or = .2) in bivariate chi 2 analyses were entered into a multivariate logistic regression model that was reduced using backward stepwise elimination procedures. RESULTS: Multivariate analyses indicated that breast-feeding the previous child, shorter length of maternal residence in the United States, not receiving prenatal bottle-feeding advice, more recent birth, and higher birth weight were positively associated with breast-feeding initiation. A major reason for choosing not to breast-feed was that women felt socially uncomfortable doing it. APPLICATIONS: Breast-feeding initiation was more likely in Latino women who received prenatal breast-feeding counselling and postpartum support. Mothers of low-birth-weight infants and women breast-feeding for the first time may need additional help. These findings can be used by programs like the Special Supplemental Nutrition Program for Women, Infants, and Children to increase breast-feeding initiation.     

Autofocusing for tissue microscopy

This paper describes the implementation of autofocusing for tissue microscopy. We first investigate the suitability of several criterion functions for the evaluation of image sharpness. Since tissue sections are invariably stained, we also discuss the selection of the colour component on which autofocusing will be performed. In tissue microscopy, where a section generally comprises multiple layers, it is often not possible to obtain an image that is well focused over the field of view because of the limited depth of field of the objective. We describe focus enhancement algorithms, closely related to the autofocus system, which may be employed to obtain an entirely sharp image.     

Bandpass filtering effect in tapered asymmetrical twin-core optical fibres

The spectral coupling characteristics in asymmetrical twin-core optical fibres under fusion tapering are investigated experimentally. It is found that appropriate filtering can be achieved by fusion tapering. It is evident that, with suitable choice of tapering length and fibre parameters, it is possible to fabricate economic all-fibre bandpass filtering devices for various applications.<>     

Fabrication of thick, high-quality strained SiGe layer on ultra-thin silicon-on-insulator and modeling of film strain

Fabrication of a thick strained SiGe layer on bulk silicon is hampered by the lattice mismatch and difference in the thermal expansion coefficients between Si and SiGe, and a high Ge content leads to severe strain in the SiGe film. When the thickness of the SiGe film is above a critical value (90 nm for 18% Ge), drastic deterioration of the film properties as well as dislocations will result. In comparison, a silicon-on-insulator (SOI) substrate with a thin top Si layer can mitigate the problems and so a thick SiGe layer with high Ge concentration can conceivably be synthesized. In the work reported here, a 110 nm thick high-quality strained Si_0.82Ge_0.18 layer was fabricated on an ultra-thin SOI substrate with a 30 nm top silicon layer using ultra-high vacuum chemical vapor deposition (UHVCVD). The thickness of the SiGe layer is larger than the critical thickness on bulk Si. Cross-sectional transmission electron microscopy (XTEM) reveals that the SiGe layer is dislocation-free and the atoms at the SiGe/Si interface are well aligned, even though X-ray diffraction (XRD) data indicate that the SiGe film is highly strained. The strain factors determined from the XRD and Raman results agree well.     

PP及芳纶/PP结晶性能的分析研究

本文通过DSC对PP及芳纶／PP复合体系结晶性能的分析研究，得到了PP长丝热压成膜结晶性能的变化，芳纶对PP结晶性能的影响以及不同冷却方式对芳纶／PP结晶性的影响等规律。     

Sedimentation of Permeable Floc

Sedimentation is an essential step to dewatering of wet materials. The present work utilized the computerized axial tomography scanner (CAT scan) to probe the sedimentation behavior of suspension with different initial solid concentrations. Not as assumed by traditional Kynch theory, the solid flux was not only a function of local solid fraction, but also of the settling time and the initial concentrations. Hence, the interior structure of floc was explored by the fluorescence in situ hybridization (FISH) and confocal laser scanning microscope (CLSM). Subsequently, the three-dimensional floc model was built up and intrafloc flow fields numerically solved. The area-weighted average pressure drop in the floc and mean flow rates estimated the floc permeability, based on Darcy's law, which were noted to vary along different principal axes and for different flocs. Local structure determines local flow field, hence determining the settling behavior of floc. Floc of large pores with low tortuosity produced easy flow-through paths, giving fast settling. Use of the average properties, such as porosity, cannot describe the sedimentation behavior of permeable flocs.     

AlGaN-GaN double-channel HEMTs

We present the design, fabrication, and characterization of AlGaN-GaN double-channel HEMTs. Two carrier channels are formed in an AlGaN-GaN-AlGaN-GaN multilayer structure grown on a sapphire substrate. Polarization field in the lower AlGaN layer fosters formation of a second carrier channel at the lower AlGaN-GaN interface, without creating any parasitic conduction path in the AlGaN barrier layer. Unambiguous double-channel behaviors are observed at both dc and RF. Bias dependent RF small-signal characterization and parameter extraction were performed. Gain compression at a high current level was attributed to electron velocity degradation induced by interface scattering. Dynamic IV measurement was carried out to analyze large-signal behaviors of the double-channel high-electron mobility transistors. It was found that current collapse mainly occurs in the channel closer to device surface, while the lower channel suffers minimal current collapse, suggesting that trapping/detrapping of surface states is mainly responsible for current collapse. This argument is supported by RF large-signal measurement results.