External Stimuli Responsive Liquid‐Infused Surfaces Switching between Slippery and Nonslippery States: Fabrications and Applications

Surfaces with controllable liquid wettability and related functions have gained increasing attention from interfacial scientists due to the high demand of fundamental research and practical applications. Inspired by pitch plant's excellent liquid repellency, external stimuli responsive lubricant‐infused surfaces switching between slippery state and nonslippery state under external stimuli (E‐LIS) have been developed by introducing external stimuli responsive materials as substrates, lubricants, or repellent liquids. This progress report is focused on recent development of E‐LIS. First, design strategy and fabrication of E‐LIS upon external stimuli exposure, including stress, electrical field, magnetic field, and temperature, is summarized. Then, emerging interfacial applications of E‐LIS, such as microreactors, pipetting devices, fog collection devices, and so on, are highlighted. In addition, remaining challenges and future prospects are provided.     

在更高的起点上推进科技创新

当前,国际金融危机继续扩散和蔓延,我国发展的外部条件更趋复杂。未来一段时间尤其是明年第一季度,我国工业、通信业面临的形势将更加严峻。增强自主创新能力,是推动产业科学发展的突破口,也是应对当前经济形势变化、增强产业发展后劲的有效措施。     

An integrated 0.38–6 GHz, 9–12 GHz fully differential fractional-N frequency synthesizer for multi-standard reconfigurable MIMO communication application

A wide-band fully differential fractional-N frequency synthesizer for multi-standard application is presented. The single fully differential LC–VCO with 28.5 % tuning rang and a set of dividers, quadrature self-mixer are designed to accomplish the multi-frequency bands with the frequency band from 0.38 to 6 GHz and from 9.0 to 12 GHz. It covers several wireless standards. A novel high isolation multiplexer is presented to achieve the frequency band selection. This chip was implemented with 65 nm CMOS technology and the maximum consumption is 20.05 mA from 1.2 V power supply. It occupies an active area of 1.5 mm². The measured typical phase noise of the frequency synthesizer is ?114.6 dBc/Hz from 1 MHz offset for 4.85 GHz output.     

波导管中高压氢气受激拉曼散射特性研究

本文研究了波导管中准分子激光泵浦高压氢气的高效受激拉曼散射特性,并从理论上分析了采用波导结构后转换效率提高的原因。     

微波器件失效率快速试验方法研究

介绍了微波低噪声GaAs FET恒定应力加速寿命试验结果,沟道温度T_(ch)为145℃时,平均寿命MTTF为9.64×10~6h,最主要的失效模式是源漏饱和电流I_(DSS)退化降低。建立了表征GaAs FET稳定性的敏感参数I_(DSS)的退化模型InP=a+blnt,分析了I_(DSS)退化与温度应力的加速关系。提出了快速推断器件可靠性的建议。     

改善准分子激光光强分布的一种方法

介绍了一种改善准分子激光输出光束光强均匀性的新方法，给出了实验结果和简要的分析。     

悬臂梁光纤振动传感器的振动光调制模型

本文就采用弹性悬臂梁为振敏体的光纤加速度传感器研究中的关键性理论问题,即振动加速度对光强的调制的理论问题,利用连接器耦合理论推导出了完整的动态解析模型。套用此理论模型可方便地实现光纤振动传感器的计算机仿真和CAD。该模型还是光纤加速度传感系统信号处理的理论依据并可推广应用于其它光纤振动传感器的研究中。文中给出了利用计算机模拟出来的结果。     

The process window of a-Si/Ti bilayer metallization for anoxidation-resistant and self-aligned TiSi2 process

The dependences of both oxidation-resistant and self-aligned silicidation properties on the thicknesses of top amorphous-Si (a-Si) and Ti metal in an a-Si/Ti bilayer process are presented. It is shown that a thin silicide layer formed during the reaction between a-Si and Ti films becomes a stable oxidation and nitridation barrier for oxygen- and nitrogen-related impurities. Moreover, the formation sequence of the silicide phase depends not only on the annealing temperature but also on the thickness of the Ti film. In addition, the preferential orientation of the silicide phase after annealing at high temperature also shows a strong dependence on the thickness of Ti film, which is attributed to the difference of the grain size in the polycrystalline silicide film. The allowed process window for the a-Si thickness can be determined experimentally and a reproducible and homogeneous self-aligned TiSi₂ film can be easily obtained by using the a-Si/Ti bilayer process in salicide applications despite high-level contaminations of oxygen impurities in both the as-deposited Ti film and the annealing ambient     

A 1.5-V full-swing bootstrapped CMOS large capacitive-load drivercircuit suitable for low-voltage CMOS VLSI

This paper reports a 1.5-V full-swing bootstrapped CMOS large capacitive-load driver circuit using two bootstrap capacitors to enhance the switching speed for low-voltage CMOS VLSI. For a supply voltage of 1.5 V, the full-swing bootstrapped CMOS driver circuit shows a 2.2 times improvement in switching speed in driving a capacitive load of 10 pF as compared to the conventional CMOS driver circuit. Even for a supply voltage of 1 V, this full-swing bootstrapped CMOS large capacitive-load driver circuit is still advantageous     

New Frontiers on van der Waals Layered Metal Phosphorous Trichalcogenides

The exponentially growing works on 2D materials have resulted in both high scientific interest and huge potential applications in nanocatalysis, optoelectronics, and spintronics. Of especial note is that the newly emerged and promising family of metal phosphorus trichalcogenides (MPX₃) contains semiconductors, metals, and insulators with intriguing layered structures and architectures. The bandgaps of the members in this family range from 1.3 to 3.5 eV, significantly enriching the application of 2D materials in the broad wavelength spectrum. In this review, emphasizing their remarkable structural, physicochemical, and magnetic properties, as well as the numerous applications in various fields, the innovative progress on layered MPX₃ crystals is summarized. Different from other layered materials, these crystals will advance a fascinating frontier in magnetism and spintronic devices with their especially featured atomic layered nanosheets. Thus, their crystal and electronic structures, along with some related researches in magnetism, are discussed in detail. The assortments of growth methods are then summarized. Considering their potential applications, the prominent utilization of these 2D MPX₃ nanoscrystals in catalysis, batteries, and optoelectronics is also discussed. Finally, the outlook of these kinds of layered nanomaterials is provided.