Cryptanalysis of Hsiang‐Shih's authentication scheme for multi‐server architecture

From user point of view, password‐based remote user authentication technique is one of the most convenient and easy‐to‐use mechanisms to provide necessary security on system access. As the number of computer crimes in modern cyberspace has increased dramatically, the robustness of password‐based authentication schemes has been investigated by industries and organizations in recent years. In this paper, a well‐designed password‐based authentication protocol for multi‐server communication environment, introduced by Hsiang and Shih, is evaluated. Our security analysis indicates that their scheme is insecure against session key disclosure, server spoofing attack, and replay attack and behavior denial. Copyright © 2010 John Wiley & Sons, Ltd.     

Polarity dependence of charge to breakdown and interface state generation of oxynitride gate dielectrics prepared by rapid thermal processing

MOS devices were fabricated with dry thermal oxides, nitrided oxides and annealed nitrided oxides. The anneals were performed in O/sub 2/ or N/sub 2/ ambients using rapid thermal processing. Charge to breakdown, Q/sub bd/, and interface state generation, Delta D/sub it/, for these devices were studied using Fowler-Nordheim electron injection. The gate bias polarity dependence of Q/sub bd/ and Delta D/sub it/ was investigated. A model is proposed to explain the observed dependence of these quantities on the polarity of injection and process parameters.<>     

Power Efficient SDR Implementation of IEEE 802.11a/p Physical Layer

Software defined physical layer modems can be considered the new trend in the field of communications. Differently from dedicated hardware, software can be easily modified to implement a large variety of standards on the same platform. The use of software can significantly reduce development costs, but generally comes at the price of an increase in silicon area and power consumption. For different reasons, this price is something that is not always convenient or even possible to pay, as in the case of low-cost ICs implementing a single waveform, or even multi-mode modems embedding legacy IPs already available in hardware. In particular, power consumption overhead can be prohibitive for mobile terminals or in general for battery-powered devices. The very first challenge for a computing fabric to be competitive is to find and implement the right trade-off between flexibility and performance. This was the guideline for the design of the Block Processing Engine (BPE), a template architecture conceived for power-efficient baseband processing. The BPE core feature is a mixed-grain instruction set balancing general-purpose fine-grain instructions with more specific coarse-grain instructions wrapping custom hardware modules. To further limit the power consumption, the BPE also implements instruction-pipelining, variable-size SIMD and multi-task support. To prove the efficiency of such an approach, a dual-mode IEEE 802.11a/p receiver has been implemented.     

Light Amplification and Efficient Electroluminescence from a Solution-Processable Diketopyrrolopyrrole Derivative via Triplet-to-Singlet Upconversion

Over the years, achieving efficient electroluminescence (EL) while simultaneously having low light amplification thresholds under optical excitation has been the key to progression toward the long-thought objective of electrically pumped organic lasers. While significant progress in this regard has been made for organic semiconductors emitting in the blue–green region of the visible spectrum, organic laser dyes with low-energy emission (>600 nm) still suffer from high amplified spontaneous emission (ASE) thresholds and low external quantum efficiencies (EQEs) in devices. Herein, low ASE thresholds and efficient EL are reported from a solution-processable organic laser dye dithiophenyl diketopyrrolopyrrole (DT-DPP). The ASE threshold of 4 µJ cm⁻² at the wavelength of 620 nm is obtained while making constructive use of triplet excitons by doping DT-DPP in a green-emitting host matrix, which exhibits thermally activated delayed fluorescence (TADF). The organic light-emitting diode fabricated from this system gives a high EQE of 7.9% due to the efficient utilization of triplet excitons. Transient EL studies further show that a high reverse intersystem crossing rate is crucial in achieving lasing under electrical pumping from such TADF-assisted fluorescent systems.     

Secure Handover Authentication Protocol Based on Bilinear Pairings

Handover authentication protocol enables a mobile node to switch from one base station to another without loss or interruption of service when the node exits the transmission area of his or her current base station. This paper proposes a secure prime-order handover authentication protocol based on bilinear pairings. The proposed protocol adapts the concept of pseudonyms to provide user anonymity and user unlinkability. It withstands well-known security threats and achieves mutual authentication, user unlinkability. A batch signature verification mechanism to verify a mass of signatures is presented in our scheme. We also prove that our scheme is secure under random oracle.     

Smart Dynamic Resource Allocation Model for Patient-Driven Mobile Medical Information System Using C4.5 Algorithm

A mobile medical information system (MMIS) is an integrated application (app) of traditional hospital information systems (HIS) which comprise a picture archiving and communications system (PACS), laboratory information system (LIS), pharmaceutical management information system (PMIS), radiology information system (RIS), and nursing information system (NIS). A dynamic resource allocation table is critical for optimizing the performance to the mobile system, including the doctors, nurses, or other relevant health workers. We have designed a smart dynamic resource allocation model by using the C4.5 algorithm and cumulative distribution for optimizing the weight of resource allocated for the five major attributes in a cooperation communications system. Weka is used in this study. The class of concept is the performance of the app, optimal or suboptimal. Three generations of optimization of the weight in accordance with the optimizing rate are shown.     

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

A lanthanum (La)-doped HfN is investigated as an n-type metal gate electrode on SiO₂ with tunable work function. The variation of La concentration in (HfinfinLa_1-x)N_y modulates the gate work function from 4.6 to 3.9 eV and remains stable after high-temperature annealing (900degC to 1000degC), which makes it suitable for n-channel MOSFET application. An ultrathin high-fc dielectric layer was formed at the metal/SiO₂ interface due to the (HfinfinLa_1-x)N_y and SiO₂ interaction during annealing. This causes a slight reduction in the effective oxide thickness and improves the tunneling current of the gate dielectric by two to three orders. We also report the tunability of TaN with Al doping, which is suitable for a p-type metal gate work function. Based on our results, several dual-gate integration processes by incorporating lanthanum or aluminum into a refractory metal nitride for CMOS technology are proposed.     

Breakdown kinetics at nanometer scale of innovative MOS devices by conductive atomic force microscopy

The breakdown (BD) kinetics of dielectrics represent a crucial issue for the reliability of microelectronics devices. In this paper, we report on an innovative and practical approach based on Conductive Atomic Force Microscopy (C-AFM) for the determination of the BD kinetics on a bare insulator surface. This technique has been applied to Pr₂O₃ films grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on Si(0 0 1) and to thermally grown SiO₂ on 4H-SiC substrates. C-AFM clearly visualizes single breakdown spots under constant voltage stresses. The stress time on the C-AFM tip was varied from 1 × 10⁻³ to 1 × 10⁻¹ s. The density of BD spots, upon increasing the stress time, exhibits in both cases an exponential trend. The Weibull slope of the dielectric BD statistics has been determined by direct measurements at nanometer scale on different dielectrics having different physical thicknesses. The comparison of the Weibull slopes obtained for different dielectric thicknesses with literature data points out intrinsic and extrinsic BD events in the SiO₂/SiC system and Pr₂O₃ based layers, respectively. In the case of the SiO₂/SiC system, BD kinetics have been demonstrated to follow the percolation model, while the role of extrinsic phenomena in the BD of Pr₂O₃ films has been proved.