Magnetic-field-controlled optical transmission in a system of metal diaphragms with apertures and a thin dielectric interlayer

A system comprising two metal diaphragms with holes and a thin dielectric interlayer exhibits magnetic-field-controlled optical transmission. This phenomenon can be used, in particular, for the creation of light modulators.     

In situ TEM observations of fracture in nanolaminated metallic thin films

Fracture of single crystal nanolaminated thin films has been investigated through in situ straining of cross-sectional samples of Cu/Ni nanolaminates grown on Cu (001) single crystal substrates. The earlest stages of deformation exhibits a confined layer slip mechanism. With continued straining, unstable fracture occurs creating a mixed-mode crack that propagates across the nanolaminate, roughly perpendicular to the interfaces. Eventually, stable crack growth with intense plastic deformation ahead of the crack tip occurs over many bilayers in the direction of crack growth. Simultaneously, plasticity was seen to spread only 1 or 2 bilayer distances normal to the crack, creating an extremely localized plastic zone. Transmission electron microscopic (TEM) examination after the test did not reveal the presence of dislocations in the crack wake, except where severe crack deflection was observed. By comparison, the plastic zone size in the substrate was greater by several of orders of magnitude.     

Understanding silica-supported metal catalysts: Pd/silica as a case study

Supported metal catalysts, particularly noble metals supported on SiO₂, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO₂/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO₂ films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.     

Performance study of iSCSI-based storage subsystems

iISCSI is emerging as an end-to-end protocol for transporting storage I/O block data over IP networks. By exploiting the ubiquitous Internet infrastructure, iSCSI greatly facilitates remote storage, remote backup, and data mirroring. This article evaluates the performance of two typical iSCSI storage subsystems by measuring and analyzing block-level I/O access performance and file-level access performance. In the file-level performance study, we compare file access performance in an NAS scheme with that in an iSCSI-based SAN scheme. Our test results show that Gigabit Ethernet-based iSCSI can reach very high bandwidth, close to that of a direct FC disk access in block I/O access. However, when the iSCSI traverses through longer distance, throughput relies heavily on the available bandwidth between the initiator and the target. On the other hand, the file-level performance shows that iSCSI-based file access (SAN scheme) provides higher performance than using NFS protocol in Linux and SMB protocol in Windows (NAS scheme). However, the advantage of using iSCSI-based file accesses decreases as the file size increases. The obtained experimental results shed some light on the performance of applications based on iSCSI storage.     

Structure, properties, and thermal stability of nanocrystallite Fe-Ti-N soft magnetic films

We deposited Fe-Ti-N magnetic films with a high sputtering power of 7 W/cm/sup 2/. When the composition of the films was in the range of Fe-Ti(3.9 at.%)-N(8.8 at.%) to Fe-Ti(3.3 at.%)-N(13.5 at.%), the films were composed of /spl alpha/' and Ti/sub 2/N precipitates. With the addition of nitrogen, 4/spl pi/M/sub s/ became higher than that of pure iron, reaching a maximum of 23.8 kG. At the same time, H/sub c/ was reduced to a minimum of 1.12 Oe. The best films can meet the needs of the recording head in dual-element giant magnetoresistive/inductive heads, yielding high storage density (10 Gb/in/sup 2/). The incorporation of N in /spl alpha/-Fe brought about the /spl alpha/' phase with its higher saturation magnetization. Ti additions inhibited the equilibrium decomposition /spl alpha/'/spl rarr//spl alpha/+/spl gamma/'. Because H/sub C//sup D//spl prop/D/sup 6/, where D is average grain diameter, grain size control is very important. The nitrogen induces severe distortion of the /spl alpha/' lattice, which can cause the grains to break into pieces and reduce the grain size. High sputtering power also led to the formation of fine grains, with diameter in the order of 14 nm. Probably Ti/sub 2/N is preferentially precipitated on the grain boundary, pinning the grain boundary and stabilizing the grain size during high-temperature heat treatment. The temperature limit for stability of the structure and its associated low coercivity was not less than 520/spl deg/C.     

Java multimedia telecollaboration

Using Java-based tools in multimedia collaborative environments accessed over the Internet can increase an application's client base. Most operating systems support Java, and its "compile once-run everywhere" architecture is easy to maintain and update. The Java-based tools presented here let users share Internet resources, including resources originally designed for single use.     

Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.     

The anisotropic effect of a weak magnetic field on the photoconductivity of C<Subscript>60</Subscript> single crystals

The effect of crystal orientation on the photogeneration of free charge carriers was studied for C₆₀ single crystals in a weak magnetic field. The photoconductivity sharply depends on the orientation of magnetic field with respect to the crystallographic directions, showing a 5–8% increase for seven axes of the C₆₀ crystal.