InGaAsP/InGaP/AlGaAs大光学腔量子阱激光器的优化

本文对808nm InGaAsP/InGaP/AlGaAs材料的大光学腔结构激光器进行了理论优化.为确保激光器是单横模激射,我们使用传递矩阵的方法,分别计算了限制层和欧姆接触层厚度对TE2和TE0模式损耗的影响,对上下限制层和欧姆接触层的厚度进行了优化,其优化后的厚度分别为0.8,0.6和0.11μm.高折射率的欧姆接触层被低折射率的限制层和金属层包围形成了无源的次级波导,泄漏波在次级波导中形成了寄生模式.欧姆接触层厚度对模式损耗的影响是周期性的,当欧姆接触层厚度为该模式的λ1/4时发生第一次共振,发生共振的间隔为其垂直注入的泄漏波波长λ1的一半.     

基于跨层设计的无线传感器网络节能双向梯度路由算法

针对现有无线传感器网络梯度路由算法在下行路由创建过程和能量更新机制中存在冗余控制开销的问题,该文提出一种采用跨层和功率控制机制,具有节能功能的双向梯度路由算法(Cross-layer Energy-efficient Bidirectional Routing, CEBR)：无需使用专门的控制分组,采用源路由方式以较小开销建立从Sink节点通往传感器节点的下行路由;通过跨层信息共享,定期采集节点剩余能量信息并按需发布;设计使用含跳数和节点剩余能量的合成路由度量标准,减少节点能量和网络带宽消耗的同时均衡节点能耗;结合RSSI(Received Signal Strength Indication)测距实现节点发射功率控制从而在数据及查询分组发送过程中节约节点能量。理论分析表明了CEBR的有效性;仿真结果显示：与现有的典型相关算法相比,CEBR能够在建立双向梯度路由的前提下,至少降低34.5%的归一化控制开销和27.12%的数据分组平均能耗,并使网络生存期延长18.98%以上。     

变压变频供水系统的节能控制方法

节能供水是一个老问题，但又是一个重要的难题。继《一种节能的变压变频供水系统》一文提出的无线网构成变压变频节能供水系统后，本文以系统思考的理念从改变系统控制软件角度使供水系统结构具有变压变频的节能属性。     

Provably secure RSA‐type signature based on conic curve

In electronic communication and wireless communication, message authentication should be necessary. However, traditional method message authentication code (MAC) employs a symmetric cryptographical technique and it needs to keep a shared private key between two parties. For convenience, people now begins to use public key techniques to provide message authentication. In wireless communication, we shall save more space for message itself because of the limited resources. Therefore, we believe that our proposed digital signature scheme will be more fitful for this kind of communication due to the following merits: (1) in addition to inheriting the merits of RSA signature such as high verification efficiency, the proposed scheme also shows its advantage over RSA by resisting low public key exponent attack; (2) comparing with 1024 bits RSA, our digital signature scheme can sign 2048‐bit long message once, and generate a signature with 1025 bits length which doubles the capacity of the 1024‐bit RSA signature; (3) the scheme is provably secure and its security is tightly related to the hardness of conic‐based (CB)‐RSA assumption. Copyright © 2008 John Wiley & Sons, Ltd.     

94GHz连续波40kW回旋振荡管高频系统的设计

W波段的高功率连续波回旋管振荡器在毫米波非致命武器等领域有着重要的应用。该文首先通过起振电流的计算,确定了工作模式,继而利用自行开发的自洽非线性计算程序GYROSC对工作在94GHz频率的连续波回旋振荡管高频系统进行了模拟计算和优化设计。结果表明,设计的W波段连续波回旋管可获得输出功率40kW,电子效率大于30%。     

采用聚类分割和直方图均衡的图像增强算法

针对现有直方图均衡化算法难以兼顾图像细节增强和噪声抑制问题,提出了一种基于聚类分割和直方图均衡的图像增强算法。引入模糊C均值聚类(FCM)算法将低通滤波后的图像分成若干类,并利用原图的边缘信息和形态学操作修正聚类结果;根据各类的均值和标准差确定映射后的动态范围,对其进行直方图均衡化处理;采用平滑滤波方法消除类间的边界效应。实验结果表明:经过该算法处理后的图像,对比度得到明显增强,噪声得到有效抑制。该方法不但可用于图像增强,还可用于图像动态范围压缩,具有广泛的应用前景。     

认知中继网络中的鲁棒传输

In cognitive relay networks, the transmission of Secondary Users (SUs) suffers from the activity of Primary Users (PUs) and wireless channel fading. Therefore, how to achieve robust transmission for cognitive relay networks is a challenging task. In this paper, we propose a relaying transmission scheme which exploits robust beamforming at the physical layer and rateless codes at higher layers. We derive the optimal beamforming weight vector and analyze the performance of the proposed scheme when the channel estimation is not accurate between two SU nodes. We also study how the amount of channel information between SU and PU impacts the system performance. Simulation results validate our theoretical analysis and demonstrate that the proposed scheme can significantly enhance the system throughput.     

Mechanistic Considerations of Bending‐Strain Effects within Organic Semiconductors on Polymer Dielectrics

The development of organic transistors for flexible electronics requires the understanding of device behavior upon the application of strain. Here, a comprehensive study of the effect of polymer‐dielectric and semiconductor chemical structure on the device performance under applied strain is reported. The systematic change of the polymer dielectric results in the modulation of the effects of strain on the mobility of organic field‐effect transistor devices. A general method is demonstrated to lower the effects of strain in devices by covalent substitution of the dielectric surface. Additionally, the introduction of a hexyl chain at the peripheries of the organic semiconductor structure results in an inversion of the effects of strain on device mobility. This novel behavior may be explained by the capacitative coupling of the surface energy variations during applied strain.     

Layer‐Controlled and Wafer‐Scale Synthesis of Uniform and High‐Quality Graphene Films on a Polycrystalline Nickel Catalyst

Chemical vapor deposition (CVD) provides a synthesis route for large‐area and high‐quality graphene films. However, layer‐controlled synthesis remains a great challenge on polycrystalline metallic films. Here, a facile and viable synthesis of layer‐controlled and high‐quality graphene films on wafer‐scale Ni surface by the sequentially separated steps of gas carburization, hydrogen exposure, and segregation is developed. The layer numbers of graphene films with large domain sizes are controlled precisely at ambient pressure by modulating the simplified CVD process conditions and hydrogen exposure. The hydrogen exposure assisted with a Ni catalyst plays a critical role in promoting the preferential segregation through removing the carbon layers on the Ni surface and reducing carbon content in the Ni. Excellent electrical and transparent conductive performance, with a room‐temperature mobility of ≈3000 cm² V^?1 s^?1 and a sheet resistance as low as ≈100 Ω per square at ≈90% transmittance, of the twisted few‐layer grapheme films grown on the Ni catalyst is demonstrated.     

High-efficiency red electroluminescence from europium complex containing a neutral dipyrido(3,2-a:2′,3′-c)phenazine ligand in PLEDs

In order to obtain high-efficiency monochromatic red emission in polymer light-emitting devices, a tris(dibenzoylmethanato)(dipyrido(3,2-a:2′,3′-c)phenazine) europium [Eu(DBM)₃(DPPZ)] doped single-emissive-layer devices were fabricated using a blend of poly(9,9-dioctyl-fluorence) and 2-tert-butyl-phenyl-5-biphenyl-1,3,4-oxadiazole as a host matrix by solution process. Significantly improved electro-luminescent properties with sharp red emission at 611.5 nm were displayed in the Eu(DBM)₃(DPPZ)-doped devices at dopant concentrations from 1 to 8 wt.%. The highest luminance up to 1783 cd/m² at 2 wt.% dopant concentration, as well as the maximum external quantum efficiency of 2.5% and current efficiency of 3.8 cd/A were obtained at 1 wt.% dopant concentration.