胶印油墨的流动曲线与分散性

颜料粒子的分散l抗态决定着胶印油墨的质量,影响到它的印刷适性。通过测试并绘制TGS系列与SAKATA肢印油墨的流动曲线,分析并讨论了颜料粒子分散状态对粘度、屈服值等流变学特性的影响,可为改进高质量胶印油墨的生产提供参考。     

影响啤酒风味物质简述

影响啤酒风味的物质可分为醇、酯、碳基化合物、酸、含硫化合物、胺（挥发性）和酚基化合物等。产生这种物质主要来源是麦芽、谷物辅料、酒花、酵母的发酵等。主要阐述了由于发酵作用而产生的影响啤酒风味的形成机理。双乙酰也是影响酒风味的重要原因之一。     

非线性系统的自适应模糊控制器设计

针对非线性系统,为获得更好的控制控制效果,设计了模糊自适应控制器。在模糊控制器的基础上根据反馈控制和调整参数向量的自适应律的求解,综合李雅普诺夫稳定理论设计了模糊自适应控制器,以满足系统的稳定性和控制效果。为验证控制器的有效性,将该控制器应用到二级倒立摆系统的稳定控制,仿真结果表明该控制器的控制效果良好,并与传统的控制方法相比较,其控制效果更佳。     

无线广播网MIMO信道模型及性能评估方法

ATSC组织通过实测,综合考虑了内径相关性、多普勒频移、莱斯因子以及交叉极化因子等因素对系统性能的影响,得到了移动场景和固定场景的广播网MIMO无线信道模型。而基于这两种场景的信道模型还没有统一的评估方法用于后续研究和优化。文中对这两种场景的信道模型进行了仿真,提出了这两种场景的相应评估方法。对于移动场景的Helsinki2信道模型,由于其移动的特性,选取一段时变信道作为一个仿真周期,评估其链路吞吐量性能。对于固定场景的MGM信道模型,测试50条静态信道,按95%的覆盖率来确定其信噪比区间,以此评估系统性能。文中对信道模型的系统仿真以及提出的评估方法,将对后续的研究和优化工作有重要作用。     

基于多源数据融合策略的配电网停电故障分析

配电网停电原因比较复杂,为精准地对停电故障进行预警,需采用大数据分析方法从多视角来深入剖析停电事件,尝试全景分析停电诱因及其对配电网影响程度的变化。因此,提出了一种简单易行的基于多源数据融合策略的配电网停电故障分析方法。方法首先融合停电池数据、配电网运行数据及气象数据来构建停电场景,然后采用成熟的主成分分析和逻辑回归来区分停电场景和其对应的非停电场景间的差异,进而发现配电网停电故障发生前的明显征兆。     

Adaptive filtering of evoked potentials with radial-basis-function neural network prefilter

Evoked potentials (EPs) are time-varying signals typically buried in relatively large background noise. To extract the EP more effectively from noise, we had previously developed an approach using an adaptive signal enhancer (ASE) (Chen et al., 1995). ASE requires a proper reference input signal for its optimal performance. Ensemble- and moving window-averages were formerly used with good results. In this paper, we present a new method to provide even more effective reference inputs for the ASE. Specifically, a Gaussian radial basis function neural network (RBFNN) was used to preprocess raw EP signals before serving as the reference input. Since the RBFNN has built-in nonlinear activation functions that enable it to closely fit any function mapping, the output of RBFNN can effectively track the signal variations of EP. Results confirmed the superior performance of ASE with RBFNN over the previous method.     

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators

This paper presents the successful use of ZnS/ZnMgS and other II–VI layers (lattice-matched or pseudomorphic) as high-k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO _x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO _x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.     

基于楔形腔结构的光纤光栅位移传感器

提出一 种基于楔形腔结构的光纤光栅(FBG)位移传感器设计方法,制作了具有结构简单、体积小、 测量精度可调节和抗 电磁干扰等优点的FBG位移传感器。通过对制作的FBG位移传感器进行标定实验,得出传感 器的灵 敏度系数为13.77pm/mm,相关系数达到了0.99,线性度良好。在钢筋混凝土柱双向偏心 受压试验中,与电类位移计的测量结果对比表明,本文制作的FBG位移传感器测量结果准 确,实用性强,适用于工程结构长期的位移监测。     

Phase-separated polydimethylsiloxane as a dielectric surface treatment layer for organic field effect transistors

We suggest a novel method for treating the surfaces of dielectric layers in organic field effect transistors (OFETs). In this method, a blend of poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and dimethylsiloxane (DMS) with a curing agent is spin coated onto the surface of a dielectric substrate, silicon oxide (SiO₂), and then thermally cured. X-ray photoelectron spectroscopy, contact angle measurements, and morphology analysis were used to show that the hydrophilic DMS layer is preferentially adsorbed on the SiO₂ substrate during the spin coating process. After thermal curing, the bottom DMS layer becomes a hydrophobic PDMS layer. This bottom PDMS layer becomes thinner during curing due to the upward motion of the hydrophobic PDMS molecules. The FET mobility of the cured system was 10^?2 cm²/Vs, which is similar to that of polymeric semiconductors on octadecyltrichlorosilane treated SiO₂ dielectric layers. We also discuss the possibility of using this blend method to increase the air-stability of polymeric semiconductors.