会计信息失真现象的博弈分析

在对现实进行合理假定的基础上建立了会计信息失真现象的有限完美信息动态博弈模型，并利用后退归纳法找到了五个满足不同条件的纳什均衡解。通过对均衡条件的分析，找出了导致会计信息失真的治理结构原因和法律制度因素，并提出了建设性的解决措施。     

Use of special-purpose bulk activity measures in monitoring raw materials and environmental objects

Mendeleev All-Union Metrology Research Institute. Translated from Atomnaya Énergiya, Vol. 73, No. 5, pp. 393–397, November 1992.     

Formation of sediment in used industrial oil. Effect of temperature and solvent

Precipitation of sediment caused by external factors — temperature and solvent — is due to the spin nature of the contaminants formed during use of the oil. These paramagnetic contaminants also lead to aging of oils. Their total elimination restores the properties of used oil to the level of the base oil, but requires sufficient energy effects. __________ Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 1, pp. 29–31, January–February, 2006.     

Optimum filtration of broadband radiation in Hilbert-transform spectroscopy

The possibility of optimum filtration of the radiation of a mercury arc lamp for subterahertz Hilbert-transform spectroscopy with a frequency-selective Josephson detector is demonstrated. Hilbert-transform spectroscopy was used for the first time for measuring the transmission spectrum of a high-pass filter.     

Methods of rotating stall and surge detection in centrifugal compressors

Systems for prevention of surging of centrifugal compressors and methods of rotating stall detection and early surge diagnosis using statistical processing of sensor signals of various parameters, i.e., the method of calculation of the correlation function of the signal and the method of calculation of signal dispersion, are discussed. The results of routine tests of air and high-speed air centrifugal compressors and their detachable flow parts are adduced. __________ Translated from Khimicheskoe i Neftegazovoe Mashinostroenie, No. 6, pp. 30–33, June, 2006.     

Erbium and Germanium Profiles in Si1 – xGe x Layers Grown by Silicon Sublimation-Source Molecular-Beam Epitaxy in GeH4

The Ge and Er depth profiles in Si_{1 – x} Ge _x layers grown on Si(100) substrates by Si sublimation-source molecular-beam epitaxy in GeH₄ were studied by secondary ion mass spectrometry. The results demonstrate that Ge facilitates Er incorporation into the growing Si–Ge layer. The Er dopant profile becomes sharper with increasing Ge content. The Ge profile also has rather sharp boundaries, indicating that there is no Ge surface segregation, which is attributable to the presence of adsorbed hydrogen, acting as a surfactant.     

Effect of the Angular Distribution of Cathode Ions on the Current Flow in a High-Current Vacuum Arc

The effect of the angular distribution of cathode ions on the parameters of a vacuum arc is investigated. It is shown that, at current densities characteristic of a high-current arc, collisions of flows of fast ions from different cathode spots may result in a high value of the ion temperature at the cathode plasma boundary. The boundary in current density of the region of a stable current flow as a function of the width of angular distribution of cathode ions is determined. It is found that, in the region of supersonic flow of ions, the permissible value of the current density drops rapidly as the angular distribution width increases, and in the subsonic region, it rises rapidly. An expression is obtained for the maximum possible ion sound velocity and for the equivalent critical ion velocity. Two- and three-fluid hydrodynamic models are used to perform calculations that illustrate characteristic distributions of parameters in the discharge gap. Analysis of the calculation results makes it possible to discuss the characteristic features of current flow in a vacuum discharge.