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121.
The kinetics and mechanism of oligomerization of cardanol over acid catalysts were studied. GPC results showed the formation of a mixture of oligomers such as dimer, trimer, tetramer, etc. IR spectra of the products of oligomerization showed a decrease in the intensity of the double bond absorption band at 1630 cm?1 and the disappearance of terminal vinyl bands at 895 cm?1 and 907 cm?1. 1H NMR spectra showed drastic changes in the unsaturated proton resonance signals at 5.5δ with respect to saturated protons at 0.2–2.5δ. The ratio of resonance integrals of unsaturated to saturated protons decreased from 1 : 6.5 to 1 : 20 after oligomerization. GPC studies showed that the rate of formation of the dimer, trimer, tetramer, etc. follow an identical path and that the individual oligomers are formed in the same weight percentage at any time during the reaction. A kinetic scheme is proposed to explain this phenomenon. Kinetic studies showed that the oligomerization reaction follows first order kinetics with respect to the monomer concentration and the rate constant is K = 6.6 × 10?5s?1. A probable mechanism for the oligomerization of cardanol is proposed. 相似文献
122.
Xiang Lu S. Sundar Kumar Iyer Jin Lee Brian Doyle Zhineng Fan Paul K. Chu Chenming Hu Nathan W. Cheung 《Journal of Electronic Materials》1998,27(9):1059-1066
We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII)
for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high
cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation
of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous
buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO2 interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique
is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant
in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen
induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure
combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force
which is sufficient to overcome the silicon fracture resistance. 相似文献
123.
B. S. Ashok Kumar William A. Klos Eric R. Taylor 《Electric Power Systems Research》1994,30(3):229-234
Recent research reports appear to indicate a real possibility that the low-frequency electromagnetic field produced by the power transmission and distribution network presents a health problem. A critical assessment of the available information is presented here. The state of knowledge, available evidence and conflicting reports indicate a definite need for interim action by the power industry. New direction for analytical research, possible interim avoidance measures, proper advice to clients and the public are discussed. Detailed mathematical modeling for the linear and nonlinear dynamics of DNA and the chromosome as a whole is suggested. 相似文献
124.
In the present article the characterstics of a finite range failure time distribution, that includes the rectangular distribution as a particular case, are studied. When shape parameter surpass unity then the distribution is IFR otherwise it always remains IFRA. A graphic shape of the distribution is also formed for certain admissible values of the constants. 相似文献
125.
Current–Voltage (I–V) characteristics have been studied at various temperatures in vacuum evaporated thin films of a-Se85Te15−x
Pb
x
(x = 0, 2, 4, 6) alloys. These characteristics show that, at low electric fields, an ohmic behaviour is observed. However, at
high electric fields (E ∼ 104 V/cm), the current becomes superohmic. At high fields, in case of samples having 0 and 2 at% of Pb, the experimental data
fits well with the theory of space charge limited conduction (SCLC) in case of uniform distribution of localized states in
the mobility gap. Such type of behaviour is not observed at higher concentration of Pb in the present glassy system due to
high conductivity. In these samples, joule heating due to large currents may prohibit the measurement of SCLC. Using the theory
of SCLC for the uniform distribution of the traps, the density of localized defect states near Fermi level is calculated for
these compositions. The results indicate that the density of defect states near Fermi level increases on addition of Pb to
binary Se85Te15alloy. This is explained in terms of electronegativity of Pb as compared to host elements. 相似文献
126.
Mani Azimi Ching-Tsun Chou Akhilesh Kumar Victor W. Lee Phamndra K. Mannava Seungjoon Park 《Formal Methods in System Design》2003,22(2):109-116
In the last three years or so we at Enterprise Platforms Group at Intel Corporation have been applying formal methods to various problems that arose during the process of defining platform architectures for Intel's processor families. In this paper we give an overview of some of the problems we have worked on, the results we have obtained, and the lessons we have learned. The last topic is addressed mainly from the perspective of platform architects. 相似文献
127.
128.
In this communication, the stability of the double-diffusive solar ponds with non-uniform temperature and salinity gradients has been investigated. This is a further generalization of our approach to this problem initiated in Ref. [7]. Using a stochastic approach, the linearized system of basic equations of motion is reduced to a single integro-differential equation. For convective motion, this equation reduces to a time-independent Schrödinger equation for a particle moving in a potential field ƒ(Z) characterized by the non-uniform temperature and salinity gradients. This equation can, in general, be solved (exactly or approximately depending on the form of the gradient profile) by methods commonly used in quantum mechanics.
In the Appendix, we show that, for a quadratic gradient profile, the above equation has an analytical solution similar to that obtained by Zangrando using numerical computations. 相似文献
129.
J. Siva Kumar K. Vijaya Kumar A. R. Subrahmanyam M. Jaipal Reddy 《Journal of Materials Science》2007,42(14):5752-5755
Ion conducting thin film polymer electrolytes based on polyethylene oxide (PEO) complexed with NaHCO3 salt has been prepared using solution-cast technique. The complexation of NaHCO3 salt with PEO is confirmed by XRD and IR studies. DC conductivity in the temperature range 303–368 K has been evaluated.
The conductivity is found to increase in the PEO complex with the NaHCO3 salt and also with an increase in temperature. Using this polymer electrolyte, an electrochemical cell with the configuration
Na/(PEO + NaHCO3)/(I2 + C + electrolyte) has been fabricated and its discharge characteristics studied. Open Circuit Voltage (OCV) and Short Circuit
Current (SCC) are found to be 2.69 V and 1.28 mA, respectively. Other parameters associated with the cell are evaluated and
presented in this paper. 相似文献
130.