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Current-voltage and initial RF measurements are presented on a double-heterojunction HEMT (high-electron-mobility transistor) structure designed for power MMIC applications. The device structure is grown by molecular-beam epitaxy and uses a spatially variant superlattice to improve the performance of the inverted AlGaAs/GaAs interface. Gate recessing is achieved using a hybrid wet-chemical selective dry etching process. For selective dry etching, reactive ion etching with a >600:1 selectivity for GaAs over AlGaAs is used to control the recess depth. The room temperature DC characteristics for a 3-mm power FET (0.7- μm gate) display an Idss of 370 mA/mm, a peak transconductance of 180 mS/mm, and a maximum gate-to-drain breakdown of 22 V. Large-signal microwave measurements at 5.5 GHz yielded a saturated output power of 1.3 W (31.2 dBm), 8.3-dB large-signal gain, and a peak power-added efficiency of 55%  相似文献   
13.
The deposition of boron-doped homoepitaxial single crystal diamond is investigated using a microwave plasma-assisted chemical vapor deposition system. The objective is to deposit high-quality boron-doped single crystal diamond and establish the relationships between the deposition conditions and the diamond growth rate and quality. Experiments are performed using type Ib HPHT diamond seeds as substrates and growing diamond with varying amounts of diborane in a methane–hydrogen gas mixture. The deposition system utilized is a 2.45 GHz microwave plasma-assisted CVD system operating at 135–160 Torr. Experiments are performed with methane concentrations of 4–6% and diborane concentrations of 5–50 ppm in the feedgas. Diamond is deposited with growth rates of 2 to 11 µm/h in this study. The deposited diamond is measured to determine its electrical conductivity and optical absorption versus wavelength in the UV, visible and IR portions of the spectrum. Data is presented that relates the growth rate and diamond properties to the deposition conditions including substrate temperature and feedgas composition.  相似文献   
14.
Norepinephrine (NE) induces a sigmoidal dose-response curve for perfusion pressure and a bell-shaped curve for oxygen consumption (VO2) in the constant-flow perfused hindlimb of Wistar rats. These effects are now described in spontaneously hypertensive rats (SHR) and age-matched Wistar-Kyoto rats (WKY). In SHR, the pressure curve was shifted left- and upward whereas the VO2 curve was shifted left- but downward, when compared with WKY. In the presence of 10 microM propranolol, prazosin (2.5 nM) shifted the pressure and VO2 curves much more than yohimbine (0.1 microM) to the right in both strains and its effects were greater in SHR, suggesting that these effects were mediated largely by alpha-1 receptors, particularly in SHR. In the presence of propranolol plus yohimbine, the pressure curve was markedly shifted to the right by both the selective alpha-1A-antagonist 5-methylurapidil (3.3 nM), and by the alpha-1D antagonist BMY 7378 (0.1 microM) or SK&F 105854 (2 microM) in SHR but not in WKY. With respect to the VO2 curve, 5-methylurapidil attenuated the descending limb without affecting the ascending limb. Similar effects were also obtained with another alpha-1A antagonist 1 nM KMD-3213 in both SHR and WKY. In contrast, BMY and SK&F markedly inhibited the ascending limb of the VO2 curve. These results indicate that both alpha-1A- and alpha-1D subtypes are functionally up-regulated in SHR muscle vascular bed where the ascending limb of VO2 is predominantly mediated by the alpha-1D at a much lower concentration for NE than the descending limb which is predominantly mediated by the alpha-1A subtype.  相似文献   
15.
A closed-form expression for the current-voltage characteristics of isotype heterojunctions is developed. Unlike previous treatments of this problem which considered only thermionic emission, this theory, in analogy to metal-semiconductor theory, includes both transport by thermionic emission across the interface and by drift-diffusion in the space charge region. A representative isotype heterojunction is analyzed and it is found that both transport mechanisms must be considered when calculating the current-voltage characteristics.  相似文献   
16.
The authors report a child with a spinal muscular atrophy (SMA)-like picture, cardiomyopathy, and cytochrome c oxidase (COX) deficiency. Electromyography and muscle biopsy showed findings typical of SMA. However, COX staining of the muscle was negative. DNA analysis did not detect deletions in the survival motor neuron (SMN) gene. The lactate and lactate-to-pyruvate ratios were increased in blood and CSF. COX activity was decreased in muscle and fibroblasts. Western blot analysis showed reduced contents for all COX subunits. Patients with clinical features resembling SMA but with an intact SMN gene should be screened for a mitochondrial disorder.  相似文献   
17.
The deposition of high quality single crystal boron-doped diamond is studied. The experimental conditions for the synthesis of 1–2 mm thick boron-doped diamond are investigated using a high power density microwave plasma-assisted chemical vapor deposition reactor. The boron-doped diamond is deposited at a rate of 8–11.5 μm/h using 1 ppm diborane in the feed gas as the boron source, and the capability to overgrow defects is demonstrated. The experimental study also investigates the deposition of diamond with both 10 ppm diborane and 2.5–500 ppm of nitrogen added to the feedgas. Synthesized material properties are measured including the electrical conductivity using a four-point probe and the substitutional boron content using infrared absorption.  相似文献   
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