Wide and multi-band reconfigurable Vivaldi antenna with slot-line feed

This paper presents a Vivaldi antenna. The antenna incorporates a slot-line feed, and is designed to operate in a wideband mode, along with four narrowband modes. The wideband mode extends from 1 to 3 GHz. A series of PIN diode switches is employed to reconfigure between the five different operating modes. Wideband-to-multiband reconfigurations are achieved by adjusting the antenna loading internally, and also by the incorporation of band-stop filters. To obtain the wideband mode, wideband matches load is used. On the other hand, to obtain the narrowband modes, two rectangular slits with narrowband matches load are used. The proposed Vivaldi antenna provides wideband operation. It is also supports operation within the LTE, GSM (L-band), GPS, and WiMAX bands.     

Automatic analysis of human posture equilibrium using empirical mode decomposition

The present study proposes a new approach for the assessment of the human balance control. This approach is based on the decomposition of the center of pressure displacement using empirical mode decomposition (EMD) that provides an effective time-frequency analysis of non-stationary signals. Twenty-eight healthy subjects performed quiet standing in four conditions—feet apart/together with respect to eyes open/closed—while recording the stabilometric signals in the anteroposterior (AP) and mediolateral (ML) directions. The EMD method decomposes each stabilometric signal into several subsignals called intrinsic mode functions (IMFs). Stabilogram-diffusion analysis technique is applied to generate the diffusion curve of each IMF signal. Each diffusion curve is modeled as a second-order system and provides representative features, such as the gain parameter. Analysis of the gain parameter shows the major effect of visual input and feet conditions on the strategy to control/stabilize the balance. Significant differences were found between young and elderly, and between women and men. In addition, the impact of feet position seems to be higher in ML direction than in AP direction.     

Crystallization kinetics of Sn40Se60 thin films for phase change memory applications

The crystallization kinetics of Sn₄₀Se₆₀ thin films has been successfully investigated using sheet resistance versus temperature measurements. Thermal evaporation was used to deposit the films on ordinary glass substrates. The crystallization temperature for Sn₄₀Se₆₀ thin film was found to be 156.6 ± 0.3 ℃. In the as-deposited state, the sheet resistance was found to be 195 MΩ, this value declined to 1560 Ω/口 upon annealing. The value of activation energy obtained from the Kissinger plot was 0.62 ± 0.07 eV. From the results obtained, Sn₄₀Se₆₀ is a promising alloy for PCM application because of its high electrical contrast, high crystallization temperature, and relatively high activation energy.     

A Novel 2.5–3.1 GHz Wide-Band Low-Noise Amplifier in 0.18 \upmu \hbox {m} CMOS

Aiming for the simultaneous realization of constant gain, accurate input and output impedance matching and minimum noise figure (NF) over a wide frequency range, the circuit topology and detailed design of wide broadband low noise amplifier (LNA) are presented in this paper. A novel 2.5–3.1 GHz wide-band LNA with unique characteristics has been presented. Its design and layout are done by TSMC 0.18  \(\upmu \hbox {m}\) technology. Common gate stage has been used to improve input matching. In order to enhance output matching and reduce the noise as well, a buffer stage is utilized. Mid-stages which tend to improve the gain and reverse isolation are exploited. The proposed LNA achieves a power gain of 15.9 dB, a NF of 3.5 dB with an input return loss less than \(-\) 11.6, output return loss of \(-\) 19.2 to \(-\) 19 and reverse isolation of \(-\) 38 dB. The LNA consumes 54.6 mW under a supply voltage of 2 V while having some acceptable characteristics.     

High output impedance current-mode lowpass,bandpass and highpass filters using current controlled conveyors

Three new current-mode second-order filter configurations which employ one or two current controlled conveyors (CCCIIs) and three passive elements are presented. Each proposed filter can realize one of the bandpass, lowpass or highpass responses all at high impedance outputs. The proposed filters offer current-control of pole angular frequency ω_o without disturbing the parameter ω_o /Q. No component matching is required and all the passive and active sensitivities are low. PSPICE simulation results are given to confirm the theoretical analysis.     

Stability problems in universal current-mode filters

Analog circuit designers have usually focused on the design of circuits employing a minimum number of components, occupying less area and dissipating less power. However, some important issues such as signal limitations and especially stability problems of the analog circuits have not received considerable attention in the literature. Hence, the work described in this paper deals with the stability problems of two new current-mode analog filters employing multiple output current controlled conveyors (MOCCCIIs). Toward that end, a single pole model is replaced for each non-ideal current gain of the MOCCCIIs. Both of the novel universal current-mode active-C filters can simultaneously realize low-pass, band-pass and high-pass/notch filter responses. SPICE and MATLAB simulation results are given to verify the theoretical analysis.     

In Situ Generation of n-Type Dopants by Thermal Decarboxylation

Molecular doping is a powerful and increasingly popular approach toward enhancing electronic properties of organic semiconductors (OSCs) past their intrinsic limits. The development of n-type dopants has been hampered, however, by their poor stability and high air-reactivity, a consequence of their generally electron rich nature. Here, the use of air-stable carboxylated dopant precursors is reported to overcome this challenge. Active dopants are readily generated in solution by thermal decarboxylation and applied in n-type organic field-effect transistors (OFETs). Both 1,3-dimethylimidazolium-2-carboxylate (CO₂-DMI) and novel dopant 1,3-dimethylbenzimidazolium-2-carboxylate (CO₂-DMBI) are applied to n-type OFETs employing well-known organic semiconductors (OSCs) P(NDI2OD-T2), PCBM, and O-IDTBR. Successful improvement of performance in all devices demonstrates the versatility of the dopants across a variety of OSCs. Experimental and computational studies indicate that electron transfer from the dopant to the host OSC is preceded by decarboxylation of the precursor, followed by dimerization to form the active dopant species. Transistor studies highlight CO₂-DMBI as the most effective dopant, improving electron mobility by up to one order of magnitude, while CO₂-DMI holds the advantage of commercial availability.     

On the Impact of Performance Faults in Modern Microprocessors

Modern microprocessors incorporate a variety of architectural features, such as branch prediction and speculative execution, which are not critical to the correctness of their operation yet are essential towards improving performance. Accordingly, while faults in the corresponding hardware may not necessarily affect functional correctness, they may, nevertheless, adversely impact performance. In this paper, we investigate quantitatively the performance impact of such faults using a superscalar, dynamically-scheduled, out-of-order, Alpha-like microprocessor, on which we execute SPEC2000 integer benchmarks. We provide extensive fault simulation-based experimental results that elucidate the various aspects of performance faults and we discuss how this information may guide the inclusion of additional hardware for performance loss recovery and yield enhancement.     

High Input Impedance NMOS-based Phase Shifter with Minimum Number of Passive Elements

In this paper, a new voltage-mode (VM) first-order phase shifter (all-pass filter) employing only four NMOS transistors and minimum number of passive elements (i.e. one resistor and one capacitor) is proposed. The proposed VM phase shifter has high input impedance and does not require passive element matching constraints. Moreover, since only two NMOS transistors are stacked between positive and negative supply voltages, the proposed circuit is suitable for low-voltage operation. Electronic tunability can be provided easily by replacing the employed resistor with an NMOS transistor operating in triode region. Simulation results based on 0.18 μm TSMC CMOS parameters with ±0.9 V supply voltages are given to demonstrate the performance of the proposed phase shifter.