基于空间矢量调制和滑模变结构的永磁直线电机直接推力控制

对永磁直线同步电机(PMLSM)基于空间矢量调制和滑模变结构直接推力控制系统进行仿真和实验分析.提出了两种基于空间矢量调制技术的控制方法,利用预测思想和PI推力调节器控制下一周期磁链,采用滑模变结构控制器控制定子磁链和推力.仿真结果表明,两种基于空间矢量调制的控制系统不仅可以获得与传统直接推力控制一样的快速响应特性,而且可以明显减小动子磁链和推力脉动.采用滑模变结构控制器对由动子电阻变化而引起的动子磁链观测角度误差有较强的鲁棒性.最后基于TMS320LF2407的实验平台实现了传统直接推力控制与滑模变结构控制.仿真和实验结果表明控制系统的性能优越.     

交通事故的多维关联规则分析

城市机动车数量的增加已经导致城市交通事故的频繁发生,能否对已发生事故作出正确的分析将直接影响到能否对未来类似事故的成功避免。本文提出一种使用数据挖掘领域中的多维关联规则技术分析大量交通事故记录的方法,通过找出可能导致交通事故发生的频繁因素组合来发现某些事故发生的规律,并将这些规律作为现实中作出预防举措的依据。     

基于BP神经网络的路口短时交通流量预测方法

交叉路口是一个城市交通的重要组成部分,其各方向的交通流量预测更是该城市智能交通系统中的重中之重,本文提出一种基干BP神经网络预测路口短时交通流量的方法,该方法将路口其他非预测方向和交通信号配时方案对流量预测的影响因素考虑在内。     

一种小型半导体恒温控制系统的研制

为研究近红外光谱仪中的光源等核心部件受温度影响的特性,研制出一种专门的小型恒温控制系统,此系统采用先进的半导体制冷技术和数字PID算法,并巧妙地使用电机驱动芯片构成驱动电路,测试结果表明,该恒温系统工作稳定可靠,控制精度较高,在微小型恒温系统研制方面有一定的实用和推广价值.     

基于误差椭球理论的惯性部件构型分析

应用误差椭球理论,研究惯性部件的最优构型配置问题.假设估计误差为高斯白噪声过程,所有惯性部件具有零均值和相同的方差.在最小化待测矢量估计误差椭球的最大值的意义下,得到了个惯性部件的最优构型,并显示出误差椭球与估计误差位于该椭球内的概率成一一对应关系,可以通过选择合适的放大因子来权衡估计误差的大小与概率分布,并用蒙特卡罗方法进行了数值仿真,结果验证了此方法的可行性.     

喷射成型高强度铝合金在固体火箭发动机上的应用

将喷射成型高性能铝合金,用于固体火箭发动机的结构材料.计算与试验结果表明,喷射成型铝合金的室温比强度高于传统铝合金、钢,在试验所选定的部件上替代传统材料,用于固体火箭发动机的构件,通过了各种性能检测,减重55%~69%,表明喷射成型高性能铝合金在固体火箭发动机上应用前景广阔.     

助推-滑翔导弹发展概况及关键技术分析

介绍了助推-滑翔飞行器的研究背景与起源,给出了助推-滑翔导弹的基本定义与飞行过程,总结了助推-滑翔导弹相关技术的国内外发展概况与相应成果,分析了将来的发展趋势与应用前景,并着重分析了助推-滑翔导弹所涉及的弹头外形设计、弹道设计、热防护措施、制导方式、控制方案、助推器、有效载荷、攻防对抗和部署方案等主要关键技术.     

氧化钨（WO3）薄膜光电催化性能的改善及应用

半导体WO₃具有较小的禁带宽度和良好的稳定性,对可见光具有较强的吸收,在光催化和光电催化领域具有广泛的用途。然而,单一WO₃薄膜仍然存在着光生电子-空穴复合率高、光电催化活性与能量转换效率偏低等问题。本文从WO₃薄膜光电催化性能的改善及应用两个方面对近年来的研究进行了综述。在WO₃薄膜光电催化性能的改善方面,分别从有序纳米结构的构建、离子掺杂与表面修饰进行总结。同时,也归纳总结了WO₃薄膜作为光电极在分解水制氢、光电催化还原CO₂和降解有机污染物等方面的应用,并提出了WO₃薄膜在光电催化过程中存在的问题,指出WO₃有序纳米异质结的构建是提高WO₃薄膜光电催化活性的有效方法。WO₃薄膜光电极的规模制备、廉价助催化剂的使用、光电极的稳定性与耐蚀性是其实际应用过程中需要解决的问题。     

Facile synthesis of tubular magnetic carbon nanofibers by hypercrosslinked polymer design for microwave adsorption

In this study, a simple and efficient method for fabrication of tubular magnetic carbon nanofibers (TMCF) has been developed. Firstly, tubular polymer nanofiber precursors are synthesized by confined self-condensation method. After carbonization of polymer and in situ transformation of FeCl₃ at high temperature, TMCF loaded with Fe nanoparticles is obtained. It has been found that carbonization temperature has significant effects on conductivity, specific surface area, pore volume, defects number in carbon component, and magnetic content of TMCF. The influence of composition, structure, and filler content on microwave absorption properties is revealed. Meanwhile, the microwave absorption mechanism has been analyzed in depth, which benefits from the designed unique structure. The TMCF obtained at 700°C exhibited best performance with the filler content of 15%. The minimum reflection loss is −47.33 dB@2.2 mm, the effective absorption bandwidth is 6.5 GHz (RL < 10 dB), and the matching frequency is 14.1 GHz. The obtained TMCF is lightweight and possess excellent microwave absorption ability, which can be widely used as highly efficient microwave absorber.     

Influence of Zr dopant on polarization in rutile (In0.5Nb0.5)0.005(Ti1-xZrx)0.995O2 ceramics

(In_0.5Nb_0.5)_0.005(Ti_1-xZr_x)_0.995O₂ (INZT, x = 0-0.10) ceramics were synthesized using a conventional sintering method, and the effects of Zr content on the microstructures, dielectric properties and electron-pinned defect-dipoles (EPDD) polarization of the resultant products were investigated. The solubility limit of INZT was x = 0.075, and a secondary ZrTiO₄ phase appeared at x = 0.10. Ceramics with x = 0-0.10 exhibited excellent dielectric properties, ie, colossal permittivity (CP, εʹ > 10³) and low dielectric loss (tanδ < 0.1), over a wide range of frequencies (10⁰-10⁶ Hz at 300 K) and temperatures (50-350 K at 1 kHz). The dielectric spectra and XPS results confirmed that the CP property of the ceramics could be ascribed to their EPDD polarization. The activation energy (E_a) for EPDD polarization was continuously enhanced by increasing x values. EPDD relaxation parameters at different x values were revealed using Cole-Cole equation fitting. Moreover, α, which characterize the relaxation time τ distribution, increased with x values, thus indicating that Zr was involved in and affected electron localized states. The high E_a, temperature T_p of the peak εʹʹ at 1 kHz, and dielectric relaxation time τ_p at 30 K were related to increases in hopping distance of electrons among defect clusters with Zr addition.