The antiviral action of recombinant receptorotoxins based on the diphtheria toxin and the human T-lymphocyte CD4-receptor

Lack of uniformity in the classification of oral diseases, and variability of study designs, measurements, methods, and statistical formats, hamper the interpretation, comparison and review of the evidence linking smoking and oral diseases. However, there have been a significant number of controlled studies, allowing definitive conclusions to be drawn. This review of 22 controlled scientific studies from 1983-1992, considers the role of smoking as an aetiological agent in: gingival problems (impaired gingival bleeding, ANUG), periodontal problems (periodontitis, bone loss, tooth loss), and caries.     

CdS-GaN heterostructure photodetector with switching and memory

A photodetector having two stable states is fabricated. Switching is effected by a light pulse from an external source. The states are stored until a voltage is supplied to the photodetector. The design and properties of the photodetector are presented. The basic device is an M-i-n-GaN light-emitting diode structure. Pis’ma Zh. Tekh. Fiz. 23, 75–78 (October 26, 1997)     

Rheokinetics of the curing of compositions based on epoxydized urethane-containing rubbers

Viscometric characteristics of adhesive compositions of two types are investigated under different temperature-time conditions of curing: one composition is based on polyurethane rubber with terminal epoxy groups (PPG-3A) and the other, on oligodieneurethane resin (PDI-3A). Mathematical models reflecting the temperature and time dependences of viscosity are developed to optimize the bonding of highly filled polymers to rubbers. The parameters of the viscous flow of adhesive compositions based on oligodieneurethane epoxy resin are determined from the results of the experimental study. It is established that the effective activation energy of curing is 2.7-fold higher than that of the viscous flow. Technological recommendations are formulated for the application of the investigated adhesive compositions onto substrate surfaces.     

Computer Simulation of a Nanoscale Ballistic SOI MOSFET with a Sub-10-nm Si Layer

A physical model and a computer simulation program for nanoscale ballistic SOI MOSFETs are developed. The model includes transistor parameters such as the type and level of doping in the source and drain regions, gate length, Si and gate-oxide thicknesses, spacer length, gate-material work function, etc. Transistor performance is characterized in terms of transconductance, subthreshold slope, on- and off-state drain currents, gate–source overlap capacitance, etc. The software enables one to optimize the transistor parameters.