A novel scheme for protection of power semiconductor devicesagainst short circuit faults

Power semiconductor devices find wide application in modern power electronic converters. Protection of these devices against overload/short circuit conditions is of paramount importance. Present day protection topologies employing different circuits have invariably one main drawback in that the fault current reaches the set value before action is initiated to trip the system. This poses a severe stress on the device. Hence an adequate safety margin has to be necessarily provided to prevent excessive device stresses and care has to be taken to see that the device is operated well within its safe operating areas. The present paper proposes a method wherein the slope or rate of rise of the fault current is detected and once the slope exceeds the set reference, action is initiated to trip the system much before the fault current reaches dangerous levels. The method provides a fast means of detection of overload and short circuit currents and can be conveniently adopted for the protection of devices in power transistor/IGBT based inverters against short circuited load conditions or shoot through faults. The possible reduction of stresses in the power devices are also highlighted     

A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

The current-voltage (I-V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films.     

ShOC rectifier: a new metal-semiconductor device with excellent forward and reverse characteristics

We report a new structure, called the shielded ohmic contact (ShOC) rectifier which utilizes trenches filled with a high-barrier metal to shield an Ohmic contact during the reverse bias. When the device is forward biased, the ohmic contact conducts with a low forward drop. However, when reverse biased, the Ohmic contact is completely shielded by the high-barrier Schottky contact resulting in a low reverse leakage current. Two dimensional numerical simulation is used to evaluate and explain the superior performance of the proposed ShOC rectifier.     

Nickel and chromium cycles: Stocks and flows project part IV

Nickel and chromium are essential ingredients in alloys increasingly important for energy-efficient, environmentally friendly modern technology. Quantitative assessment of the flows of these metals through the world economy from resource extraction to final disposal informs resource policy, energy planning, environmental science, and waste management. This article summarizes the worldwide technological cycles of nickel and chromium in 2000. Stainless steel is the major use of these metals, but they serve numerous other special needs, as in superalloys for high-temperature service, as plating materials, and in coinage. Because they are used primarily in alloys, novel recycling issues arise as their use becomes more widespread. “... the great New York and St. Louis double track, nickel plated railroad...” — Norwalk, Ohio, Chronicle 10 March 1881 announces arrival of surveyors for the future Nickel Plate Railway “Later [1911] I formed an alloy of Iron and Chromium, which showed remarkable resistance to rust and tarnish ... [It was] rediscovered by an Englishman named Brearley, in 1914.” —Elwood Haynes to Stephen F. Roberts, 17 January 1925     

Influence of the silicon surface treatment by plasma etching and scratching on the nucleation of diamond grown in HFCVD - a comparative study

A comparative study for the nucleation of diamond was carried out using surface treatment like (i) surface scratching with 1 μm diamond paste and (ii) surface etching using chlorine plasma at different RF powers (50, 100 and 150 W). Atomic force microscopic study shows variation in roughness from 31 nm to 110 nm. Scratching results in random scratches, whereas plasma etches a surface uniformly. Scanning electron microscopic observations show well faceted crystallites with a predominance of angular shaped grains corresponding to 〈100〉 and 〈110〉 crystallite surfaces for the scratched as well as plasma etched substrate. Surface etching at 150 W plasma power results in a better growth in comparison with 50 and 100 W plasma powers. Chlorine-radical is found responsible for the changes in the growth morphology. Raman spectroscopy shows a sharp peak at 1,332 cm⁻¹ and a peak at ∼1,580 cm⁻¹ for both samples.