Fuzzy logic switching of thyristor controlled braking resistorconsidering coordination with SVC

This paper presents a new switching control scheme for braking resistors (BR) using fuzzy logic to enhance overall stability of electric power systems. In addition, the coordination with an SVC is also considered to achieve a wider stable region. The braking resistor is set on one of the generator busbars, where the real power output from the generator is measured to determine the firing-angle of the thyristor switch. The switching control scheme is simple so as not to require heavy computation on the microcomputer based switching controller. An SVC is set on one of the busbars in the system. The switching of the SVC uses a similar fuzzy logic control scheme to the one for the BR. Simulation results show the effectiveness of the proposed fuzzy logic switching control scheme     

Micromachined piezoelectric force sensors based on PZT thin films

A micromachined lead zirconate titanate (PZT) force sensor for scanning force microscope (SFM) is conceptualized by its piezoelectricity. The fabrication procedure is interpreted, and mechanical characteristics of the micromachined PZT force sensors with various lengths are studied in this paper. A compact SFM is constructed by using the piezoelectric PZT sensor. A very clear image is taken by this SFM. The current study of the micromachined PZT force sensor can be considered as a breakthrough of design of SFM as well as a good example of integrated piezoelectric microdevices     

Erbium-doped silicon and porous silicon for optoelectronics

Silicon forms the backbone of the microelectronics industry, and possibly, of the optoelectronics industry, hitherto dominated by III/V materials. One of the remaining goals is to build an optical source in silicon. Erbium exhibits luminescent 1.54 μm intra-4f transitions in both silicon and porous silicon. This paper reviews the work which has been carried out in this field and discusses some possible additional applications of erbium-doped silicon in optoelectronics, such as a novel on-chip temperature sensor.     

Fuzzy inference and fuzzy inference processor

Fuzzy inference, a data processing method based on the fuzzy theory that has found wide use in the control field, is reviewed. Consumer electronics, which accounts for most current applications of this concept, does not require very high speeds. Although software running on a conventional microprocessor can perform these inferences, high-speed control applications require much greater speeds. A fuzzy inference date processor that operates at 200000 fuzzy logic inferences per second and features 12-b input and 16-b output resolution is described     

Vector algorithm for Reed-Muller expansions

A novel vector algorithm for Reed-Muller (RM) expansions is proposed which can save as many as a factor of 2^n-1 memory elements compared with previous matrix algorithms     

Numerical investigation of nitriding of refractory metals (with account of the phase constitution diagrams for metal-gas systems)

A mathematical model of dissolution of gas in a metal is suggested with account of phase formation in accordance with the phase constitution diagram (PCD). The stage-by-stage saturation process to the final product formation is shown for an individual particle, through which a reaction wave passes, depending on the diffusion permeability of the metal and solubility conditions that obey Sieverts's law. The effect of the filtration supply of the oxidant to the reaction zone and the process exothermicity on the course of the process is shown.Institute of Structural Macrokinetics, Russian Academy of Sciences, Chernogolovka, Russia. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 65, No. 4, pp. 447–450, October, 1993.     

A Collection of Papers and Memoirs Celebrating the Contribution of Rod Burstall to Advances in Computer Science

Formal Aspects of Computing are dedicated to Professor Rod Burstall, and, as a collection of papers, memoirs and incidental pieces, form a Festschrift for Rod. The contributions are made by some of the many who know Rod and have been in uenced by him. The research papers included here represent some of the areas in which Rod has been active, and the editors thank their colleagues for agreeing to contribute to this Festschrift.     

Far-infrared pump-probe measurement of the lifetime of the 2p−1 shallow donor level in n-GaAs

The low temperature lifetime of electrons excited in the 2p^?1 donor level of n-GaAs has been studied in a far-infrared pump-probe experiment. The measurement has been carried out using a pulsed far-infrared molecular gas laser working at a wavelength of 292µm, with the sample in a magnetic field of 5.1 T, resonant with the 1s_o?2p^?1 transition. Two FIR pulses are sliced from one FIR-laser pulse by means of optical switching techniques using two Q-switched Nd:YAG lasers. The first pulse is used to saturate the transition, while the second pulse probes the return of the population in the excited state towards thermal equilibrium as a function of the time delay after the excitation pulse. The value of 350±50 ns found for the lifetime falls in line with CW saturation results on materials with other doping concentrations.