1H T2‐NMR monitoring of crosslinked polyolefin aging

This work examines the correlation between the ¹H‐NMR T₂ relaxation constant and the mechanical properties of aged crosslinked polyolefin cable insulation. T₂ experiments on unswollen samples could not differentiate between unaged and highly aged materials; all exhibited ¹H T₂ constants of approximately 0.5 ms. To accentuate the effects of aging, samples were swollen in various solvents. Unaged samples had T₂ values of approximately 15 ms in good solvents. With thermal aging, T₂ values decreased as the ultimate tensile elongation decreased. However, the correlation between T₂ and elongation differed for samples irradiated with high‐energy radiation and for materials aged above versus below the crystalline melting temperature. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 90: 2578–2582, 2003     

Supply-side hurdles in Internet B2C e-commerce: an empirical investigation

Given Hong Kong's special circumstances of small physical size, advanced infrastructure, and low shopping cost, a survey is designed under which supply-side problems in Internet business-to-consumer (B2C) e-commerce are indirectly revealed by responses on the demand side. Difficulties arising from the reluctance to answer questionnaires on the part of e-firms wary about trade and innovation secrets and their small number at the outset are thereby overcome. Survey data on demand-side obstacle factors in the form of perceived low e-shopping comparability, e-shopping inconvenience, e-transaction insecurity, and poor Internet privacy, together with orientation toward social interaction and low awareness on the part of consumers, translate into information on notionally matching supply-side hurdles. Regression analysis and hypothesis testing indicate statistical significance for the above hurdle factors in terms of impact on individual unwillingness to shop online. These results add to the inductive basis for future research into a general demand-supply theory of Internet B2C e-commerce and offer an empirically-grounded position against which the effects of later supply-side changes can be evaluated. Useful information also follows for engineer-managers seeking to compare marginal improvements in supply-side problems, particularly in the form of estimated substitution ratios.     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

The influence of oxygen partial pressure on growth of the (Hg,Re)-1223 intergrain junction

Hg/sub 0.82/Re/sub 0.18/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 8+/spl delta// polycrystalline samples were successfully obtained by using different oxygen partial pressure in the annealing treatment of the precursor ceramic. The doping state was confirmed by X-ray powder diffraction pattern analysis and by observing distinct thermopower values at room temperature. Also, the intergrain regions have shown an improvement in the critical current density when using the precursor preparation with 10% O/sub 2/ and 90% Ar (optimal doped). The optimal doped sample has presented the highest /spl alpha/ exponent of the J/sub c//spl prop/[1-(T/T/sub c/)/sup 2/]/sup /spl alpha// dependence. For the case of (Hg,Re)-1223 polycrystalline superconductor applications, the /spl alpha/ exponent can be used as a junction quality parameter.     

Design procedure of class-E amplifier for off-nominal operation at 50% duty ratio

Design equations for satisfying the off-nominal operating condition [i.e., only the zero-voltage switching (ZVS) condition] of the Class-E amplifier with a linear shunt capacitance at a duty ratio D=0.5 are derived. A new parameter s (V/s), called the slope of switch voltage when the switch turns on is introduced to obtain an image of the distance from the nominal conditions. By examining off-nominal Class-E operation degree of the design freedom of the Class-E amplifier increases by one. In addition various amplifier parameters such as operating frequency, output power, and load resistance range can be set as design specifications. For example, the peak switch voltage and switch current can be taken into account in the design procedure. Examples of a design procedure of the Class-E amplifier for off-nominal operation are given. The theoretical results were verified with PSpice simulation and experiments.     

Mechanism of the inhibiting effect of diphenylamine in the oxidation of hydraulic oils

The mechanism of the inhibiting effect of diphenylamine during the oxidation of two base stocks of hydraulic oils were studied at 120, 130, and 140°C. The key reactions in the mechanism of the action of the inhibitor were identified, and the values of the kinetic parameters and their activation energies were determined. The kinetic parameters were calculated, and the salient kinetic features of the inhibited oxidation of the two specimens were compared at 70°C, the temperature of accelerated testing of hydraulic oils. The results of this prediction were analyzed, and the reasons for differences in the oxidation stability of the samples examined were established.     

A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.     

Understanding the differences between how novice and experienced designers approach design tasks

Research was undertaken to understand how to provide the most appropriate support for novice designers in engineering design. However, how designers apply their experience and knowledge is not understood and further research in this area is required. This paper describes an observational study to understand how novice and experienced designers approach design tasks. Electronic Publication     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.