The nature and role of incoherent interphase interfaces in diffusional solid-solid phase transformations

In this article, some views on the nature of incoherent interphase interfaces, and their role in the nucleation and growth processes governing the evolution of microstructure in solid-state diffusional transformations (reconstructive transformations), are explored. It is argued that essentially incoherent interfaces can be involved in the initiation and propagation of polymorphic transformations and massive transformations as well as in various precipitation phenomena in metallic and ceramic systems. Similar views have already been advanced earlier in connection with studies of massive transformations. Faceting along the interphase interface during nucleation and growth can derive from thermodynamic, kinetic, and crystallographic factors independent of the bicrystallography of the conjugate phases. This idiomorphic behavior can be relevant to both intergranular and intragranular phase formation. The concept of one-dimensional (1-D) commensuration of phases through plane edge-to-edge/row matching is an interesting extension of the classic ideas of coherency and bicrystallography and potentially important in characterizing the behavior of certain types of boundaries. However, the general importance of these geometrical relations in real and reciprocal space will depend on the depth of the energy wells in orientation space associated with these special boundaries. This article is based on a presentation made in the “Hume-Rothery Symposium on Structure and Diffusional Growth Mechanisms of Irrational Interphase Boundaries,” which occurred during the TMS Winter meeting, March 15–17, 2004, in Charlotte, NC, under the auspices of the TMS Alloy Phases Committee and the co-sponsorship of the TMS-ASM Phase Transformations Committee.     

Monolithic integration of a 5.3 GHz regenerative frequency divider using a standard bipolar technology

A monolithic microwave frequency divider IC with an operating range of 1.4?5.3 GHz was developed and fabricated in a standard bipolar technology. The circuit operates on the principle of `regenerative frequency division?. Compared to the most popular divider concepts based on a master-slave D-flip-flop, an almost twice as high input frequency can be divided, provided that the same technology is used. A further advantage is the low power consumption.     

Targeting optimum resource allocation using reverse problem formulations and property clustering techniques

Decoupling the constitutive equations from the balance and constraint equations allows for reformulating a conventional forward problem into two reverse problems. The first reverse problem is the reverse of a simulation problem, where the process model is solved in terms of the constitutive (synthesis/design) variables instead of the process variables, thus providing the synthesis/design targets. The second reverse problem (reverse property prediction) solves the constitutive equations to identify unit operations, operating conditions and/or products by matching the synthesis/design targets. Visualization of the problem is achieved by employing recently developed property clustering techniques, which allows a high-dimensional problem to be visualized in two or three dimensions. The clusters by definition satisfy intra-stream and inter-stream conservation through linear “mixing” rules, which allows for the development of consistent additive rules along with their ternary representation.     

Modified transmission-reflection method for measuring constitutive parameters of thin flexible high-loss materials

The transmission-reflection method is modified for measuring constitutive parameters of thin high-loss materials used as radar absorbers. The method uses a two-layer structure, consisting of a layer of thin flexible unknown material supported by a thicker rigid known material. The analysis and measurements focus on nonmagnetic samples of a high dielectric constant and loss factor and on the waveguide configuration in the X-band. A nonlinear least-squares optimization is used to obtain the complex permittivity from the measured scattering parameters. The uncertainty analysis presented facilitates selection of the support layer thickness. Simulations with the finite-difference time-domain method explore the effects of sample imperfections. Accuracy of a few percent can be achieved for a sample thickness of a fraction of a millimeter, provided that the thickness of the support dielectric is close to optimum and sample has only small surface imperfections.     

Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys

The stationary and time-resolved polariton radiation in ultrahigh quality AIGaAs layers have been studied. It has been found that elastic exciton-exciton collisions lead to the appearance of a low-energy line of polariton radiation. We show that the rate of exciton-to-polariton transitions caused by elastic exciton-exciton collisions is determined not only by the density of the excitonic gas, but also by its temperature; this is in accordance with existing theoretical predictions. The text was submitted by the authors in English.     

Hermetic Packaging Using Eutectic SnPb Solder and Cr/Ni/Cu Metallurgy Layer

We have developed an easy, low-cost, and low-temperature optoelectronic hermetic packaging technology utilizing the eutectic SnPb solder and the Cr/Ni/Cu bonding pad. Bonding characteristics of the design were investigated in three different setups: silicon-silicon, silicon-glass, and glass-glass samples. Hermeticity was achieved at 200 degC without flux for all samples during the final bonding process. The bonding pads did not dewet during or after the reflow process. By utilizing the eutectic SnPb solder, the self-alignment process can be achieved. Because the bonding process was conducted through visual alignment, original misalignment was estimated to be more than 100 mum. The surface tension of melting solder during the reflow process allowed the samples to self-align and obtain a misalignment of less than 20 mum after solidification, which was 4% of the entire solder width. The bonding strength of the three setups ranged from 3 to 10 MPa. Among the three setups, glass-glass samples appear to have the strongest bonding strength. This low-temperature and cost-effective soldering process has demonstrated its feasibility and potential utilization in optoelectronic packaging     

Successful Aging

This issue's Works in Progress department presents six abstracts for projects that are developing interesting solutions to the elderly's quality of life challenges. The first two abstracts discuss projects that will help provide the elderly with freedom and independence by instrumenting their environments with supportive technology. The next two abstracts discuss projects building specialized user interfaces for addressing some of the challenges associated with aging, such as vision impairment. The final two abstracts present projects that will aid independence for the elderly by providing remote monitoring and assistance.     

Self-Consistent Effects on the Starting Current of Gyrotron Oscillators

Self-consistent effects on the starting current of gyrotron oscillators are examined. Field profiles in the open cavity are shown to be sensitive to the interaction dynamics. This can either significantly raise or lower the oscillation threshold, particularly for the low-Q modes. The transition from resonant-mode oscillations at the low magnetic field to backward-wave oscillations at the high magnetic field is demonstrated.     

Noise modeling for RF CMOS circuit simulation

The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the 1/f noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs.