The growth of GaN on lithium gallate (LiGaO2) substrates for material integration

Compliant substrates offer a new approach for strain management in semiconductors. Various implementations and processes for achieving substrate compliancy have been proposed and demonstrated. These include the use of twist-, glass-, and metal-bonds. A recent focus in our work has been on the growth of GaN on a novel and easily removable substrate—lithium gallate—for the ultimate regrowth on a bonded GaN template. The bonding technology is important to reduce thermal stresses during the regrowth step. Herein, we focus on the understanding of the growth of GaN on lithium gallate.     

Probing stress effects in HfO2 gate stacks with time dependent measurements

Effects of constant voltage stress (CVS) on gate stacks consisting of an ALD HfO₂ dielectric with various interfacial layers were studied with time dependent sensing measurements: DC I–V, pulse I–V, and charge pumping (CP) at different frequencies. The process of injected electron trapping/de-trapping on pre-existing defects in the bulk of the high-κ film was found to constitute the major contribution to the time dependence of the threshold voltage (V_t) shift during stress. The trap generation observed with the low frequency CP measurements is suggested to occur within the interfacial oxide layer or the interfacial layer/high-κ interface, with only a minor effect on V_t.     

Voltage- and temperature-dependent gate capacitance and current model: application to ZrO/sub 2/ n-channel MOS capacitor

Based on the energy-dispersion relation in each region of the gate-dielectric-silicon system, a tunneling model is developed to understand the gate current as a function of voltage and temperature. The gate capacitance is self-consistently calculated from Schrodinger and Poisson equations subject to the Fermi-Dirac statistics, using the same band structure in the silicon as used for tunneling injection. Franz two-band dispersion is assumed in the dielectric bandgap. Using a Wentzel-Kramer-Brillouin (WKB)-based approach, direct and Fowler-Nordheim (FN) tunneling and thermionic emission are considered simultaneously. The model is implemented for both the silicon conduction and valence bands and both gate- and substrate-injected currents. ZrO/sub 2/ NMOSFETs were studied through temperature-dependent C/sub g/-V/sub g/ and I/sub g/-V, simulations. The extracted band gaps and band offsets of the ZrO/sub 2/- and interfacial-Zr-silicate-layer are found to be comparable with the reported values. The gate currents in ZrO/sub 2/-NMOSCAPs are found to be primarily contributed from the silicon conduction band and tunneling appears to be the most probable primary mechanism through the dielectric. Oscillations of gate currents and kinks of gate capacitance were observed near the flat-band in the experiments. These phenomena might be caused by the interface states.     

强流金属离子注入

金属等离子体浸没注入（MEPIII）技术与金属蒸气真空弧（MEVVA）源注入技术有相同之处,也有各自不同的特点。采用两种方法进行钛离子注入硅,RBS方法分析注入层,并对两种注入技术予以比较。     

Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

The structural properties and surface morphology of AlGaN/GaN structures grown on LiGaO₂ (LGO), sapphire, and hydride vapor phase epitaxy (HVPE)-grown GaN templates are compared. AlGaN grown on LGO substrates shows the narrowest x-ray full width at half maximum (FWHM) for both symmetric 〈00.4〉 and asymmetric 〈10.5〉 reflections. Atomic force microscopy (AFM) analysis on AlGaN surfaces on LGO substrates also show the smoothest morphology as determined by grain size and rms roughness. The small lattice mismatch of LGO to nitrides and easily achievable Ga-polarity of the grown films are the primary reasons for the smoother surface of AlGaN/GaN structure on this alternative substrate. Optimizations of growth conditions and substrate preparation results in step flow growth for an AlGaN/GaN structure with 300 Å thick Al_0.25Ga_0.75N on 2.4 μm thick GaN. A high III/V flux ratio during growth and recently improved polishing of LGO substrates aids in promoting two dimensional step flow growth. The GaN nucleation layer directly on the LGO substrate showed no evidence of mixed phase cubic and hexagonal structure that is typically observed in the nucleation buffer on sapphire substrates. Cross-sectional high-resolution transmission electron microscopy (HRTEM) was performed on an AlGaN/GaN heterostructure grown on LGO. The atomic arrangement at the AlGaN/GaN interface was sharp and regular, with locally observed monolayer and bilayer steps.     

A signal estimation approach to functional MRI

In the last half decade, fast methods of magnetic resonance imaging have led to the possibility, for the first time, of non-invasive dynamic brain imaging. This has led to an explosion of work in the Neurosciences. From a signal processing viewpoint the problems are those of nonlinear spatio-temporal system identification. In this paper, we develop new methods of identification using novel spatial regularization. We also develop a new model comparison technique and use that to compare our method with existing techniques on some experimental data.     

A new approach to the analysis of rough surface scattering

A novel approach to the problem of scattering by a randomly rough surface is developed based on combining normalization and the method of smoothing. Previous uses of smoothing have been forced to assume small surface heights in order to guarantee the dominance of the scattered field by its average or specular part. The term that causes the average scattered field to be so sensitive to the height is identified, and is normalized out of the basic integral equation. Smoothing is then applied to the normalized integral equation with a subsequent reintroduction of the normalizing factor after smoothing. The results are shown to extend beyond existing approximations, and they contain none of the divergent integral behavior that has recently been observed with a pure second order iterative approximation. An examination of the conditions under which the technique provides very accurate results shows that it is essentially an extension of the so-called composite surface scattering model     

Block acknowledgment: redesigning the window protocol

A window protocol based on the block acknowledgment method, in which acknowledgment message has two numbers, m and n, to acknowledge the reception of all data messages with sequence numbers ranging from m to n, is discussed. In the window protocol, message sequence numbers are taken from a finite domain and both message disorder and loss can be tolerated. An initial version of the protocol that uses a simplified timeout action and unbounded sequence numbers is presented, the simplified timeout action in the protocol is replaced by a sophisticated one without disturbing the protocol's correctness, and the unbounded sequence numbers are replaced by bounded ones while preserving the protocol's correctness. Remarks concerning other variations of the protocol are also presented     

Effects of higher order nonlinearities on second-order frequency mixing

Equations are presented here which describe second-order nonlinear frequency mixing under conditions where third-order non-linearities significantly alter the phase-matching relations. The coupled amplitude and phase equations illustrate that additional phase mismatch of the second-order process can be expected due to third-order nonlinearities. These nonlinearities include refractive index changes for a wave at one frequency due to waves at other frequencies. Growth of off-axis weak waves (small scale self-focusing) is described in terms of four-wave mixing in the presence of the second-order frequency mixing. It is shown that in at least some cases growth of off-axis waves is enhanced by second-order frequency mixing.     

Dermatitis-inducing furanocoumarins on leaf surfaces of eight species of Rutaceous and Umbelliferous plants

Eight species of Rutaceae or Umbelliferae, known to cause or suspected of causing photophytodermatitis, had the linear furanocoumarins psoralen, bergapten, and xanthotoxin on their leaf surfaces, in concentrations varying from 0.014 to 1800 /gmg/g fresh weight, equivalent to 0.17–56% of the total leaf concentration. The higher percentage generally observed for spring leaves compared to autumn leaves suggests a higher rate of transfer of these furanocoumarins to the surface in the younger leaves. Among the plants studied,Ruta graveolens had the highest surface concentrations of all three furanocoumarins. The relatively high effectiveness in causing dermatitis of some species with low surface concentrations may be explained by a more effective mechanism of transfer of the furanocoumarins to the skin. A role in the defense of the plant is suggested by their accumulation on the plant surface.A paper based on the work reported here was presented at the Groupe Polyphénols conference, Brock University, St. Catharines, Ontario, Canada, August 19–19, 1988.