Decreased resistance to intravenous tumour-cell challenge during reticuloendothelial depression following surgery

The influence of surgical stress on resistance to i.v. challenge with Walker 256 tumour cells was investigated in rats, with respect to the functional state of the reticuloendothelial system (RES). Phagocytic activity of the RES was evaluated by colloid (gelatinized [131I] "RE test lipid emulsion") clearance, and opsonin levels were determined by bioassay. Reticuloendothelial clearance capacity was significantly (P less than 0-05) depressed 60 min following surgery (coeliotomy plus jejunal enterotomy) as quantified by both humoral and cellular parameters of RE function. Phagocytic depression was primarily due to impaired hepatic Kupffer cell function and related to a deficiency in the phagocytic supporting capacity of plasma, also referred to as opsonic or recognition factor (RF) capacity. During the postoperative period of RES colloid clearance depression, pulmonary localization of the blood-borne test particulate matter increased. Rats challenged with 51Cr-labelled viable tumour cells at a dose of 1-0 X 106 i.v., either prior to or during the postoperative period of RE depression, manifested a significant (P less than 0-05) increment in pulmonary localization of the viable tumour cells, and a decrease (P less than 0-05) in hepatic clearance. Evaluation of survival patterns demonstrated a significant (P less than 0-01) decrease in host resistance to i.v. tumour cell challenge (2 X 103 cells) during the postoperative period of RE depression and hypo-opsonaemia. Sham-anaesthetized control animals survived 17-9 +/- 0-8 days, while animals challenged during the period of RE depression survived 7-9 +/- 0-4 days. An increased incidence of respiratory distress and nasal discharge was observed in the animals with impaired survival. Thus, surgical manipulation may transiently compromise RES systemic host defence and may be reflected in an increment in the pulmonary localization of blood-borne tumour cells. The relationship of this altered pattern of tumour cell distribution to the impaired survival remains to be determined, and warrants investigations.     

Drop impact reliability of Sn–1.0Ag–0.5Cu BGA interconnects with different mounting methods

The poor drop-shock resistance of near-eutectic Sn–Ag–Cu (SAC) solder interconnects drives the research and application low-Ag SAC solder alloys, especially for Sn–1.0Ag–0.5Cu (SAC105). In this work, by dynamic four-point bend testing, we investigate the drop impact reliability of SAC105 alloy ball grid array (BGA) interconnects with two different surface mounting methods: near-eutectic solder paste printing and flux dipping. The results indicate that the flux dipping method improves the interconnects failure strain by 44.7% over paste printing. Further mechanism studies show the fine interfacial intermetallic compounds (IMCs) at the printed circuit board side and a reduced Ag content inside solder bulk are the main beneficial factors overcoming other negative factors. The flux dipping SAC105 BGA solder joints possess fine Cu₆Sn₅ IMCs at the interface of solder/Cu pads, which increases the bonding strength between the solder/IMCs and the fracture resistance of the IMC grains themselves. Short soldering time of flux dipping joints above the solder alloy liquidus mitigates the growth of interfacial IMCs in size. In addition, a reduced Ag content in flux dipping joint bulk causes a low hardness and high compliance, thus increasing fracture resistance under higher-strain rate conditions.     

A 16-Mb MRAM featuring bootstrapped write drivers

A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-/spl mu/m three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42/spl mu/m/sup 2/ 1-transistor 1-magnetic tunnel junction (1T1MTJ) cell, measures 79 mm/sup 2/ and features a /spl times/16 asynchronous SRAM-like interface. The paper describes the cell, architecture, and circuit techniques unique to multi-Mb MRAM design, including a novel bootstrapped write driver circuit. Hardware results are presented.     

A high-speed 128-kb MRAM core for future universal memory applications

A 128-kb magnetic random access memory (MRAM) test chip has been fabricated utilizing, for the first time, a 0.18-/spl mu/m V/sub DD/=1.8 V logic process technology with Cu metallization. The presented design uses a 1.4-/spl mu/m/sup 2/ one-transistor/one-magnetic tunnel junction (1T1MTJ) cell and features a symmetrical high-speed sensing architecture using complementary reference cells and configurable load devices. Extrapolations from test chip measurements and circuit assessments predict a 5-ns random array read access time and random write operations with <5-ns write pulse width.     

Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays

Raytheon Vision Systems (RVS) continues to further its capability to deliver state-of-the-art high-performance, large-format, HgCdTe focal-plane arrays (FPAs) for dual-band long-wavelength infrared (L/LWIR) detection. Specific improvements have recently been implemented at RVS in molecular-beam epitaxy (MBE) growth and wafer fabrication and are reported in this paper. The aim of the improvements is to establish producible processes for 512 × 512 30-μm-unit-cell L/LWIR FPAs, which has resulted in: the growth of triple-layer heterojunction (TLHJ) HgCdTe back-to-back photodiode detector designs on 6 cm × 6 cm CdZnTe substrates with 300-K Fourier-transform infrared (FTIR) cutoff wavelength uniformity of ±0.1 μm across the entire wafer; demonstration of detector dark-current performance for the longer-wavelength detector band approaching that of single-color liquid-phase epitaxy (LPE) LWIR detectors; and uniform, high-operability, 512 × 512 30-μm-unit-cell FPA performance in both LWIR bands.     

Device-Aware Yield-Centric Dual-Vt Design Under Parameter Variations in Nanoscale Technologies

Dual-V_t design technique has proven to be extremely effective in reducing subthreshold leakage in both active and standby mode of operation of a circuit in submicrometer technologies. However, aggressive scaling of technology results in different leakage components (subthreshold, gate and junction tunneling) to become significant portion of total power dissipation in CMOS circuits. High-V_t devices are expected to have high junction tunneling current (due to stronger halo doping) compared to low-V_t devices, which in the worst case can increase the total leakage in dual-V_t design. Moreover, process parameter variations (and in turn V_t variations) are expected to be significantly high in sub-50-nm technology regime, which can severely affect the yield. In this paper, we propose a device aware simultaneous sizing and dual-V_t design methodology that considers each component of leakage and the impact of process variation (on both delay and leakage power) to minimize the total leakage while ensuring a target yield. Our results show that conventional dual-V_t design can overestimate leakage savings by 36% while incurring 17% average yield loss in 50-nm predictive technology. The proposed scheme results in 10%-20% extra leakage power savings compared to conventional dual-V_t design, while ensuring target yield. This paper also shows that nonscalability of the present way of realizing high-V_t devices results in negligible power savings beyond 25-nm technology. Hence, different dual-V_t process options, such as metal gate work function engineering, are required to realize high-performance and low-leakage dual-V_t designs in future technologies.     

Structure,band gap and energy level modulations for obtaining efficient materials in inverted polymer solar cells

Two new donor–acceptor (D–A) polymers composed of benzo[1,2-b:4,5-b′]dithiophene (BDT) as donor and thiadiazolo[3,4-c]pyridine (PyTZ) as acceptor were designed and synthesized. Compared to the polymer based on BDT and 4,7-dithien-2-yl-2,1,3-benzothiadiazole (DTBT), the planarity, energy levels, and band-gaps of the new polymers were fine adjusted by incorporating conjugated alkylthienyl side chains to BDT and substitute a stronger acceptor PyTZ for 2,1,3-benzothiadiazole. The new polymers exhibit broad absorption from 300 to 800 nm in both solution and film state. The polymer band gaps and energy levels are close to the optimal values. As a result, power conversion efficiencies (PCEs) of 4.84% and 5.11% were obtained for inverted polymer solar cells based on these new polymers. The PCEs are significantly higher than those of the BDT–DTBT based polymers (2–4%).     

ON WEIGHTED PORTMANTEAU TESTS FOR TIME‐SERIES GOODNESS‐OF‐FIT

Recent work in the literature has shown weighted variants of the classic portmanteau test for time series can be more powerful in many situations. In this article, we study the asymptotic distribution of weighted sums of the squared residual autocorrelations where both the sample size n and maximum lag of the statistic m grow large. Several weighting schemes are introduced, including a data‐adaptive statistic in which the weights are determined by a function of the sample partial autocorrelations. These statistics can provide more power than other portmanteau tests found in the literature and are much less sensitive to the choice of the maximum correlation lag. The efficacy of the proposed methods is further demonstrated through an analysis of Australian red wine sales.