Neue Entwicklungen beim Hohlkatoden‐Gasflusssputtern. New Developments in Hollow Cathode Gas Flow Sputtering

The gas flow sputter technique was invented a few years ago particularly for the inexpensive fabrication of sophisticated ceramic layers. Meanwhile, it has matured and become increasingly powerful. Today it is on the verge of being applied in industrial fabrication processes. The present article gives an overview over the method, its characteristics and the numerous applications.     

Reliability of a k-out-of-n: G system with common-mode outages

This paper presents the model of a k-out-of-n: G system with common mode outages. The objective is to analytically derive the mean operating mode between failures for a non-repairable component system. The average system failure time and the system availability are also considered. Then, the model is extended to a system with repairable components and unrestricted repair, in which service times are exponentially distributed.     

Characteristics of nitrogen and phosphorus removal in SBR and SBBR with different ammonium loading rates

Laboratory scale experiments were conducted to study the deterioration of enhanced biological phosphorus removal (EBPR) due to influent ammonium concentration, and to compare the performance of two types of sequencing batch reactor (SBR) systems, a conventional SBR and sequencing batch biofilm reactor (SBBR). Both in SBR and SBBR, the total nitrogen removal efficiency decreased from 100% to 53% and from 87.5% to 54.4%, respectively, with the increase of influent ammonium concentration from 20 mg/l to 80 mg/l. When the influent ammonium concentration was as low as 20 mg/l (C: N: P=200: 20: 15), denitrifying glycogen-accumulating organisms (DGAOs) were successfully grown and activated by using glucose as a sole carbon source in a lab-scale anaerobic-oxic-anoxic (A₂O) SBR. In the SBR, due to the effect of incomplete denitrification and pH drop, the nitrogen and phosphorus removal efficiency decreased from 77% to 33.3% when the influent ammonium concentration increased from 20 mg/l to 80 mg/l. However, in the SBBR, simultaneous nitrification/denitrification (SND) occurred, and the nitrification rate in the aerobic phase did not change remarkably in spite of the increase in influent ammonium concentration. Phosphorus removal was not affected by the increase of influent ammonium concentration.     

A positive‐working photosensitive polyimide based on thermal cross‐linking and acidolytic cleavage

A novel positive‐working photosensitive polyimide (PSPI) based on a poly(hydroxyimide) (PHI), a crosslinking agent having vinyl ether groups, and a photoacid generator (PAG) was prepared. The PHI as a base resin of the three‐component PSPI was synthesized from 4,4′‐oxydiphthalic anhydride and 2,2′‐bis(3‐amino‐4‐hydroxyphenyl)hexafluoropropane through ring‐opening polymerization and subsequent thermal cyclization. 2,2′‐bis(4‐(2‐(vinyloxy)ethoxy)phenyl)propane (BPA‐DEVE) was used as a vinylether compound and diphenyliodonium 5‐hydroxynaphthalene‐1‐sulfonate was used as a PAG. The phenolic hydroxyl groups of the PHI and the vinyl ether groups of BPA‐DEVE are thermally crosslinked with acetal structures during prebake step, and the crosslinked PHI becomes completely insoluble in an aqueous basic solution. Upon exposure to UV light (365 nm) and subsequent postexposure bake (PEB), a strong acid generated from the PAG cleaves the crosslinked structures, and the exposed area is effectively solubilized in the alkaline developer. The dissolution behavior of the PSPI containing each 11.5 wt % of BPA‐DEVE and of the PAG was studied after UV exposure (365 nm) and PEB. It was found that the difference in dissolution rates between exposed and unexposed areas was enough to get high resolution. A fine positive pattern with a resolution of 5 μm in a 3.7‐μm‐thick film was obtained from the three‐component PSPI. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

The Fabrication and Characterization of Single‐Component Polymeric White‐Light‐Emitting Diodes

By using Ni⁰‐mediated polymerization, we have systematically synthesized a series of fluorene‐based copolymers composed of blue‐, green‐, and red‐light‐emitting comonomers with a view to producing polymers with white‐light emission. 2,7‐Dibromo‐9,9‐dihexylfluorene, {4‐(2‐[2,5‐dibromo‐4‐{2‐(4‐diphenylamino‐phenyl)‐vinyl}‐phenyl]‐vinyl)‐phenyl}‐diphenylamine (DTPA), and 2‐{2‐(2‐[4‐{bis(4‐bromo‐phenyl)amino}‐phenyl]‐vinyl)‐6‐tert‐butyl‐pyran‐4‐ylidene}‐malononitrile (TPDCM) were used as the blue‐, green‐, and red‐light‐emitting comonomers, respectively. It was found that the emission spectra of the resulting copolymers could easily be tuned by varying their DTPA and TPDCM content. Thus with the appropriate red/green/blue (RGB) unit ratio, we were able to obtain white‐light emission from these copolymers. A white‐light‐emitting diode using the polyfluorene copolymer containing 3 % green‐emitting DTPA and 2 % red‐emitting TPDCM (PG3R2) with a structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonic acid)/PG3R2/Ca/Al was found to exhibit a maximum brightness of 820 cd m^–2 at 11 V with Commission Internationale de L'Eclairage (CIE) coordinates of (0.33,0.35), which are close to the standard CIE coordinates for white‐light emission (0.33,0.33).     

Epitaxial growth of GaN on (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> via solution-cast seed layer formation process using Ga(mDTC)<Subscript>3</Subscript>

This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al₂O₃ substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)₃ was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)₃ concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.