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141.
E. P. G. Smith G. M. Venzor A. M. Gallagher M. Reddy J. M. Peterson D. D. Lofgreen J. E. Randolph 《Journal of Electronic Materials》2011,40(8):1630-1636
Raytheon Vision Systems (RVS) continues to further its capability to deliver state-of-the-art high-performance, large-format,
HgCdTe focal-plane arrays (FPAs) for dual-band long-wavelength infrared (L/LWIR) detection. Specific improvements have recently
been implemented at RVS in molecular-beam epitaxy (MBE) growth and wafer fabrication and are reported in this paper. The aim
of the improvements is to establish producible processes for 512 × 512 30-μm-unit-cell L/LWIR FPAs, which has resulted in: the growth of triple-layer heterojunction (TLHJ) HgCdTe back-to-back photodiode
detector designs on 6 cm × 6 cm CdZnTe substrates with 300-K Fourier-transform infrared (FTIR) cutoff wavelength uniformity
of ±0.1 μm across the entire wafer; demonstration of detector dark-current performance for the longer-wavelength detector band approaching
that of single-color liquid-phase epitaxy (LPE) LWIR detectors; and uniform, high-operability, 512 × 512 30-μm-unit-cell FPA performance in both LWIR bands. 相似文献
142.
Optimisation methods under varied criteria for different parameters in stochastic reliability systems are being increasingly developed and have been reported in recent literature. The large interest evinced in this fascinating area is primarily due to its applicational value and operational role in the decision making process. Recently a parallel system has been considered and the optimal number of units discussed, as well as optimal replacement times for the system based on acquisition and replacement costs.In this paper we consider an improved version of the model formulation, by bringing in additionally the maintenance and per unit repair time costs, and develop a procedure to obtain the optimal number of components in the system with the condition that the system is allowed to undergo a prefixed maximum number of repairs, after which the system is to be replaced.The applicational use of the results is illustrated through numerical work, specialising to some known laws governing the system parameters and corresponding to different fixed number of repair sanctions. 相似文献
143.
J. D. Benson L. O. Bubulac P. J. Smith R. N. Jacobs J. K. Markunas M. Jaime-Vasquez L. A. Almeida A. Stoltz P. S. Wijewarnasuriya G. Brill Y. Chen J. Peterson M. Reddy M. F. Vilela S. M. Johnson D. D. Lofgreen A. Yulius G. Bostrup M. Carmody D. Lee S. Couture 《Journal of Electronic Materials》2014,43(11):3993-3998
State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a molecular beam epitaxy (MBE) preparation etch, exposed Te precipitates, small pits, and bumps on the (112)B surface of the CdZnTe wafer were observed. From near-infrared and dark field microscopy, the bumps and small pits on the CdZnTe surface are associated with strings of Te precipitates. Raised bumps are Te precipitates near the surface of the (112)B CdZnTe where the MBE preparation etch has not yet exposed the Te precipitate(s). An exposed Te precipitate sticking above the etched CdZnTe surface plane occurs when the MBE preparation etch rapidly undercuts a Te precipitate. Shallow surface pits are formed when the Te precipitate is completely undercut from the surrounding (112)B surface plane. The Te precipitate that was previously located at the center of the pit is liberated by the MBE preparation etch process. 相似文献
144.
Venkata Rao Tirumalasetty Madhusudhan Reddy Machupalli 《International Journal of Electronics》2019,106(4):521-536
This paper presents a low power and high speed two hybrid 1-bit full adder cells employing both pass transistor and transmission gate logics. These designs aim to minimise power dissipation and reduce transistor count while at the same time reducing the propagation delay. The proposed full adder circuits utilise 16 and 14 transistors to achieve a compact circuit design. For 1.2 V supply voltage at 0.18-μm CMOS technology, the power consumption is 4.266 μW was found to be extremely low with lower propagation delay 214.65 ps and power-delay product (PDP) of 0.9156 fJ by the deliberate use of CMOS inverters and strong transmission gates. The results of the simulation illustrate the superiority of the newly designed 1-bit adder circuits against the reported conservative adder structures in terms of power, delay, power delay product (PDP) and a transistor count. The implementation of 8-bit ripple carry adder in view of proposed full adders are finally verified and was observed to be working efficiently with only 1.411 ns delay. The performance of the proposed circuits was examined using Mentor Graphics Schematic Composer at 1.2 V single ended supply voltage and the model parameters of a TSMC 0.18-μm CMOS. 相似文献
145.
M. Reddy D. D. Lofgreen K. A. Jones J. M. Peterson W. A. Radford J. D. Benson S. M. Johnson 《Journal of Electronic Materials》2013,42(11):3114-3118
HgCdTe dual-band mid-wave infrared/long-wave infrared focal-plane arrays on CdZnTe are a key component in advanced electrooptic sensor applications. Molecular beam epitaxy (MBE) has been used successfully for growth of dual-band layers on larger CdZnTe substrates. However, the macrodefect density, which is known to reduce the pixel operability and its run-to-run variation, is larger when compared with layers grown on Si substrate. This paper reports the macrodefect density versus size signature of a well-optimized MBE dual-band growth and a cross-sectional study of a macrodefect that represents the most prevalent class using focused ion beam, scanning transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The results show that the macrodefect originates from a void, which in turn is associated with a pit on the CdZnTe substrate. 相似文献
146.
K. S. V. Subramanyam V. Balaram U. V. B. Reddy M. Satyanarayanan Parijat Roy S. S. Sawant 《Mapan》2013,28(1):1-9
The performance and response of two commonly used certified reference materials (CRMs) for mafic rocks MRG-1 (CANMET, Canada) and JGb-1 (Geological Survey of Japan), both gabbroic in composition, are evaluated for a set of mafic plutonic rocks (gabbros) from Boggulakonda (BK) occurring to the east of Proterozoic Cuddapah Basin, South India. In this study, quadrupole-inductively coupled plasma mass spectrometry was used to generate trace and rare earth element (REE) data using MRG-1 and JGb-1 as calibration standards separately for a comparative study. It is found that the two CRMs show highly variable major, minor and trace element compositions except ΣREE. When used for BK gabbros, JGb-1 has yielded better results than MRG-1 with respect to trace elements (HFS elements Nb and Ta in specific), whereas a good agreement was observed between both CRMs for REE concentrations when compared with certified data. The Nb–Ta element distribution patterns for BK gabbros in the spidergrams plotted using JGb-1 as CRM show relatively prominent and pronounced negatively spiking anomalies with reference to Th, whereas using MRG-1 as calibration CRM yielded unresolved and unclear Nb–Ta anomalies in the present study. The geochemistry (major, minor and trace) of MRG-1 is different when compared to that of JGb-1. Probably this is reason for the disparity in the results obtained by inductively coupled plasma mass spectrometry on mafic plutonic rocks. The study conducted on the BK gabbros, reveals better and reliable results using JGb-1 as CRM. This study also reveals the importance of using proper CRM for calibration having closely matching trace and REE concentrations in addition to major and minor elements, for obtaining reliable data in geological samples. 相似文献
147.
C. Vijaya Kumar Reddy D. Sreeramulu M. Raghunath 《Food research international (Ottawa, Ont.)》2010,43(1):285-288
Epidemiological studies from other parts of the world indicate that increased consumption of fruits and vegetables are associated with lower risk of chronic degenerative diseases. Fruits are an important component of Indian diets. Studies indicate that fruits and vegetables are rich sources of phenolic compounds and antioxidant activity (AOA). Present study was taken up to determine the AOA and phenolic content of fresh and dry fruits commonly consumed in India by two different (radical scavenging) methods and relate it to their total phenolic content (TPC) for the first time. Fourteen commonly consumed fresh fruits and ten dry fruits were studied. AOA and TPC contents of both fresh and dry fruits showed marked variation. Correlation analysis between the TPC and AOA as assessed by the two methods showed that phenolics may contribute maximally to the ABTS (r = 0.84) and to lesser extent to DPPH (r = 0.77) in fresh fruits, where as in dry fruits they correlated well to DPPH activity (r = 0.97) and to a lesser extent to FRAP (r = 0.87). In general, the results indicate that majority of the fresh and dry fruits studied are rich in phenolic antioxidants with potent free radical scavenging activity imply their importance to human health. 相似文献
148.
149.
Y. Kalyana Lakshmi K. Srinivas B. Sreedhar M. Manivel Raja M. Vithal P. Venugopal Reddy 《Materials Chemistry and Physics》2009,113(2-3):749-755
With a view to understand the influence of nano size on various properties of cobalt-doped ZnO-based diluted magnetic semiconductors, a series of materials were prepared by the citrate gel route. The phase and morphology studies have been carried out by X-ray diffraction and transmission electron microscopy, respectively. All the samples of the present investigation are found to have hexagonal wurtzite structure and crystallite sizes are found to vary from 25 nm to 65 nm. From the optical absorption measurements it has been observed that upon doping with cobalt, the energy band gap is found to shift towards lower energy side (red shift) while it shifts towards higher energy side (blue shift) when the crystallite size is increased continuously. It has been observed from the XPS results that oxidation state of Cobalt is +2 and that the difference in binding energies of Co 2p3/2 and Co 2p1/2 is found to increase continuously with increasing crystallite size. Finally, all the samples are found to exhibit room temperature ferromagnetism and the specific magnetization decreases with increasing crystallite size. 相似文献
150.
Romero-Canyas Rainer; Downey Geraldine; Reddy Kavita S.; Rodriguez Sylvia; Cavanaugh Timothy J.; Pelayo Rosemary 《Canadian Metallurgical Quarterly》2010,99(5):802
Societies and social scientists have long held the belief that exclusion induces ingratiation and conformity, an idea in contradiction to robust empirical evidence linking rejection with hostility and aggression. The classic literatures on ingratiation and conformity help resolve this contradiction by identifying circumstances under which rejection may trigger efforts to ingratiate. Jointly, findings from these literatures suggest that when people are given an opportunity to impress their rejecters, ingratiation is likely after rejection experiences that are harsh and that occur in important situations that threaten the individual's self-definition. Four studies tested the hypothesis that people high in rejection sensitivity and therefore dispositionally concerned about rejection will utilize opportunities to ingratiate after harsh rejection in situations that are self-defining. In 3 studies of situations that are particularly self-defining for men, rejection predicted ingratiation among men (but not women) who were high in rejection sensitivity. In a 4th study, harsh rejection in a situation particularly self-defining for women predicted ingratiation among highly rejection-sensitive women (but not men). These findings help identify the specific circumstances under which people are willing to act in socially desirable ways toward those who have rejected them harshly. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献