Diode-pumped passively mode-locked Nd3+-doped fluoridefiber laser emitting at 1.05 μm: novel results

The investigation of a novel seed source for Nd:glass or Nd:YLF regenerative amplifiers presented in an earlier work is extended. The new results demonstrate the versatility of the diode-pumped passively mode-locked Nd³⁺:ZBLAN fluoride fiber laser: pulses with durations from 9.2 ps to 320 fs, with center wavelengths in the range 1047-1060 nm, and with a maximum average output power of 4 mW could be generated. The amplitude noise was as low as 0.6% rms (150 Hz-100 kHz) and the longterm stability and reliability were impressive as well. Further, an evaluation of the capabilities of three different (analytical, semi-analytical, and numerical) models to predict the pulse durations is performed for laser setups used in our experiment     

Configuration Q-switching in a diode-pumped multirodvariable-configuration resonator

We report on a novel technique for Q-switching at high repetition rates, where the change in the Q of the cavity is due to the capability of a variable-configuration multirod resonator (VCR) to switch between an unstable Fabry-Perot configuration and a stable ring configuration. The switching between the configurations is accomplished simply by the means of a Pockels cell. Using the new Q-switching technique, 35-ns-long pulses with a peak power of 17 kW at a repetition rate of 4 kHz, giving an average power of 2.4 W, were obtained     

Unrepeated 40-Gb/s RZ single-channel transmission at 1.55 μmusing various fiber types

We investigate experimentally and theoretically the effect of signal power and dispersion compensation scheme in unrepeated return-to-zero single-channel 40-Gb/s 150-km transmission using standard single-mode fiber (SMF), nonzero dispersion shifted fiber [true wave fiber (TWF)] and dispersion shifted fiber (DSF). It is shown, that standard SMF allows significantly higher fiber-input power than nonzero dispersion shifted fiber or dispersion shifted fiber and, therefore, offers larger transmission spans     

On the application of the Neuron MOS transistor principle formodern VLSI design

In this paper, the speed performance, power consumption, and layout area of Neuron MOS transistor circuits are monitored considering the requirements of modern VLSI design. The Neuron MOS transistor is a recently discovered device principle which has a number of input gates that couple capacitively to a floating gate. The floating gate potential controls the current of a transistor channel. This device can be used in logic circuits. A threshold current through the Neuron MOS transistor can be defined that causes a switching of the output of the logic circuits as soon as the channel current surmounts or falls below the specified value. We designed two different multiplier cells, one based on a Neuron MOS inverter, and the other on a Neuron MOS n-MOSFET which is used as one input device of a comparator circuit. Functionality of both cells is proven for data rates up to 50 MHz which represents the first high-speed measurement of a circuit based on this new design principle. A perspective for the upper speed limit found at more than 500 MHz is given by simulation. The new design principle has a layout area reduced by more than a factor of two compared to usual multiplier cells. Moreover, it is shown, that depending on the design chosen, high speed operation leads to considerable power savings. In view of those advantages it is concluded that the principle of threshold logic qualifies for a major breakthrough for packing density improvement of CMOS-based applications     

A new method for the calculation of the emission spectrum of DFBand DBR lasers

A method based on transmission matrices that allows the emission spectra of arbitrarily complicated semiconductor laser structures to be computed below and above threshold has been developed. These can include active and passive periodic or uniform sections. As examples, the authors compute the emission spectra of a normal distributed feedback (DFB) laser, a DFB laser with a λ/4 phase shifter, and a surface-emitting distributed Bragg reflector (DFB) laser. To do that, Petermann's method for calculating the spontaneous emission coupling coefficient has been extended to the case of a periodic waveguide. It is shown how the spontaneous emission, when treated correctly, can be used to measure the coupling coefficient of the grating in a DFB laser with a λ/4 phase shifter     

Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing

Memristive devices based on mixed ionic–electronic resistive switches have an enormous potential to replace today's transistor‐based memories and Von Neumann computing architectures thanks to their ability for nonvolatile information storage and neuromorphic computing. It still remains unclear however how ionic carriers are propagated in amorphous oxide films at high local electric fields. By using memristive model devices based on LaFeO₃ with either amorphous or epitaxial nanostructures, we engineer the structural local bonding units and increase the oxygen‐ionic diffusion coefficient by one order of magnitude for the amorphous oxide, affecting the resistive switching operation. We show that only devices based on amorphous LaFeO₃ films reveal memristive behavior due to their increased oxygen vacancy concentration. We achieved stable resistive switching with switching times down to microseconds and confirm that it is predominantly the oxygen‐ionic diffusion character and not electronic defect state changes that modulate the resistive switching device response. Ultimately, these results show that the local arrangement of structural bonding units in amorphous perovskite films at room temperature can be used to largely tune the oxygen vacancy (defect) kinetics for resistive switches (memristors) that are both theoretically challenging to predict and promising for future memory and neuromorphic computing applications.     

Limited-trial Chase decoding

Chase decoders permit flexible use of reliability information in algebraic decoding algorithms for error-correcting block codes of Hamming distance d. The least complex version of the original Chase algorithms uses roughly d/2 trials of a conventional binary decoder, after which the best decoding result is selected as the final output. On certain channels, this approach achieves asymptotically the same performance as maximum-likelihood (ML) decoding. In this correspondence, the performance of Chase-like decoders with even less trials is studied. Most strikingly, it turns out that asymptotically optimal performance can be achieved by a version which uses only about d/4 trials.     

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

We present a comprehensive summary of our observations of metal‐rich particles in multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors, including directionally‐solidified ingot‐grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal‐rich particles are assessed by synchrotron‐based analytical x‐ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal‐rich particles can be observed (metal silicide nanoprecipitates and metal‐rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc‐Si materials can largely be explained by variations in crystal growth parameters, structural defect types, and contamination sources. Copyright © 2006 John Wiley & Sons, Ltd.     

Visualizing the electric grid

In the new world of competition, power traders, grid managers, public service boards, and the public itself all need to take in what's happening at a glance. Visualization software enables viewers to interpret the data more rapidly and more accurately than ever before. This kind of software will become still more useful, even indispensable, as electricity grids are integrated over ever-larger areas, as transmission and generation become competitive markets, and as transactions grow in number and complexity. Concepts like power flow, loop flow, and reactive power, which once mattered only to the engineers directly involved in grid operations, now must be made intuitive. This is because they must be communicated to public service commissions and the consumer-voters to whom such boards are answerable. In short, whether the client/user is a power marketer, a grid operator or manager, a public authority, or a member of the public, power system visualization tools can aid their comprehension by lifting the truly significant above background noise. Such tools can expedite decision-making for congestion management, power trading, market organization, and investment planning for the long term     

Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

The gallium gradient in Cu(In,Ga)Se₂ (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co‐evaporation processes, plays a key role in the device performance of CIGS thin‐film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X‐ray measurements. In addition, the gallium grading of a CIGS layer grown with an in‐line co‐evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth‐dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co‐evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi‐Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross‐sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper‐vacancy‐mediated indium and gallium diffusion in CuInSe₂ and CuGaSe₂ were calculated using density functional theory. The migration barrier for the In_Cu antisite in CuGaSe₂ is significantly lower compared with the Ga_Cu antisite in CuInSe₂, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co‐evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd.