0.8 V CMOS adiabatic differential switch logic circuit using bootstrap technique for low-voltage low-power VLSI

A novel 0.8 V CMOS adiabatic differential switch logic (ADSL) circuit using the bootstrap technique for low-voltage low-power VLSI is reported. Using capacitance coupling effects from the bootstrap transistors with the related isolating transistors, this 0.8 VADSL circuit has a 52% smaller propagation delay time, consuming 26% less power as compared to the energy efficient logic circuit.     

Cryptanalysis of Hsiang‐Shih's authentication scheme for multi‐server architecture

From user point of view, password‐based remote user authentication technique is one of the most convenient and easy‐to‐use mechanisms to provide necessary security on system access. As the number of computer crimes in modern cyberspace has increased dramatically, the robustness of password‐based authentication schemes has been investigated by industries and organizations in recent years. In this paper, a well‐designed password‐based authentication protocol for multi‐server communication environment, introduced by Hsiang and Shih, is evaluated. Our security analysis indicates that their scheme is insecure against session key disclosure, server spoofing attack, and replay attack and behavior denial. Copyright © 2010 John Wiley & Sons, Ltd.     

Time and temperature-dependent mechanical behavior of underfill materials in electronic packaging application

The thermo-mechanical testing of HYSOL FP4549 polymer-filled underfill materials was conducted under different strain rate and temperature environment. A new specimen preparation procedure and further test methodology are developed to characterize the time–temperature mechanical behaviors of underfill materials. The stress–strain behavior of materials is simulated with constitutive framework, and the dependence of Young’s modulus on temperature and strain rate was evaluated. In addition, the specimens were tested with microforce testing system to evaluate the creep curve of underfill materials as a function of temperature and stress level. In view of the uncertainty of the Young’s modulus determination, the specimens were tested with unloading–reloading technique to verify the test results and investigate its cyclic mechanical behaviors. On the other hand, the adhesion strength of underfill materials are tested between different adhesion surface by different deformation rate after some isothermal and hygro-thermal environments attack, which is to simulate the environment that the electronic components may be encountered. The results reveal that the rise of the temperature and moisture cause the apparent reduction of the surface adhesion strength, due to the microstructure transition of materials and the diffusion and concentration of moisture. For all conditions of the experiment after environmental preconditioning, the specimen fracture surfaces occur between solder mask and FR4 substrates, which means the measured strength is the adhesion strength between solder mask and FR4. Comparing different adhesion surface, the adhesion strength of underfill/FR4 is higher than solder mask/FR4. The interface of solder mask/FR4 is more sensitive to the temperature and moisture. In all of the cases, increasing the moisture level has a varying but significant effect on both fracture strength and absorption energy Ψ. The failure mode transfer and the strength degradation are attributed to the moisture uptake between the FR4/solder mask and solder mask/underfill interface.     

Confined Ferroelectric Properties in Poly(Vinylidene Fluoride‐co‐Chlorotrifluoroethylene)‐graft‐Polystyrene Graft Copolymers for Electric Energy Storage Applications

Dielectric polymer film capacitors having high energy density, low loss and fast discharge speed are highly desirable for compact and reliable electrical power systems. In this work, we study the confined ferroelectric properties in a series of poly(vinylidene fluoride‐co‐chlorotrifluoroethylene)‐graft‐polystyrene [P(VDF‐CTFE)‐g‐PS] graft copolymers, and their potential application as high energy density and low loss capacitor films. Thin films (ca. 20 μm) are prepared by different processing methods, namely, hot‐pressing or solution‐casting followed by mechanical stretching at elevated temperatures. After crystallization‐induced microphase separation, PS side chains are segregated to the periphery of PVDF crystals, forming a confining interfacial layer. Due to the low polarizability of this confining PS‐rich layer at the amorphous–crystalline interface, the compensation polarization is substantially decreased resulting in a novel confined ferroelectric behavior in these graft copolymers. Both dielectric and ferroelectric losses are significantly reduced at the expense of a moderate decrease in discharged energy density. Our study indicates that the best performance is achieved for a P(VDF‐CTFE)‐g‐PS graft copolymer with 34 wt‐% PS; a relatively high discharged energy density of approximately 10 J cm^?3 at 600 MV m^?1, a low dielectric loss (tanδ = 0.006 at 1 kHz), and a low hysteresis loop loss (17.6%) at 550 MV m^?1.     

Nearly dispersion-penalty-free transmission using blue-shifted1.55-μm distributed feedback lasers

Nearly dispersion-penalty-free transmission over 40 km of nondispersion-shifted single-mode fiber was demonstrated using blue-shifted 1.55-μm distributed feedback lasers. This good system performance is attributed to the narrow and blue-shifted modulated optical spectrum which is in turn associated with the soft turn-on light-current characteristics. Transmission experiments using lasers with hard turn-on light-current characteristics give rise to broad modulated spectra and higher dispersion penalties     

Triple-frequency planar monopole antenna for side-feed communication device on GSM/DCS/PCS operation

A novel side-feed planar monopole antenna capable of triple-frequency operation at about 900, 1800 and 1900 MHz is presented. The planar monopole antenna occupies a small area of 6/spl times/31 mm, and is easily made using thin copper. The planar monopole antenna can be side-fed and mounted perpendicularly to the main circuit board of a communication device so that it offers a novel design with a free degree of feed point so as to save device space, resulting in a low profile to the system ground plane. In addition, the obtained impedance bandwidths of the proposed antenna at about 900, 1800 and 1900 MHz can cover the GSM (890-960 MHz), DCS (1710-1880 MHz) and PCS (1850-1990 MHz) bands.     

Characterization and Properties of Nickel Aluminide Nanocrystals in an Alumina Layer for Nonvolatile Memory Applications

Intermetallic nanocrystal memory devices with nickel aluminide nanocrystals in the electron-trapping layer and an alumina layer as the blocking layer were prepared on the surface of oxidized silicon substrates by sputter-coating of Ni and Al₂O₃ in sequence, followed by an annealing procedure. Several aluminide nanocrystal memory devices are reported. The effect of annealing at 900°C on the memory properties was investigated. Intermetallic nanocrystals were identified by high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy as Ni₂Al₃ with sizes of 15–20 nm. The results showed that a sixfold increase (0.37 V to 2.34 V) in the memory window could be achieved after annealing for the optimal time of 3 min.     

As/sup +/-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity

We report the utilization of an As/sup +/-implanted AlGaAs region and regrowth method to enhance and control the wet thermal oxidation rate for 850-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL). The oxidation rate of the As/sup +/-implanted device showed a four-fold increase over the nonimplanted one at the As/sup +/ dosage of 1/spl times/10/sup 16/ cm/sup -3/ and the oxidation temperature of 400/spl deg/C. 50 side-by-side As/sup +/-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current of /spl Delta/I/sub th//spl sim/0.2 mA and slope-efficiency of /spl Delta/S.E./spl sim/3%.     

Techniques for flexible image/video resolution conversion with heterogeneous terminals

Multimedia capturing and display devices of different resolutions and aspect ratios can be easily connected by networks and, thus, there is a great need to develop techniques that facilitate flexible image/video format conversion and content adaptation among these heterogeneous terminals. Quality degradation due to downsampling, up-sampling, coding/decoding, and some content adaptation mechanism (say, image mosaicking) in the transmission process is inevitable. It is desirable that multimedia contents can be easily captured, displayed, and seamlessly composed. Challenges and techniques to achieve this goal are reviewed first. Then, two specific topics, i.e., image/video mosaicking and super resolution (SR) conversion, are highlighted. As compared with previous work developed for these problems, the challenge under the current context is to strike a balance between low computational complexity and high quality of resultant image/video. Several new developments along this line are discussed     

Nitride-Based High-Power Flip-Chip LED With Double-Side Patterned Sapphire Substrate

A nitride-based high-power flip-chip (FC) light-emitting diode (LED) with a double-side patterned sapphire substrate (PSS) was proposed and realized. Under 350-mA current injection, it was found that forward voltages were 3.24, 3.26, and 3.25 V for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. It was found that the 350-mA LED output powers were 79.3, 98.1, and 121.5 mW for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. In other words, we can enhance the electroluminescence intensity by 53% without increasing operation voltage of the fabricated LED