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61.
Watanabe Y. Hing Wong Kirihata T. Kato D. DeBrosse J.K. Hara T. Yoshida M. Mukai H. Quader K.N. Nagai T. Poechmueller P. Pfefferl P. Wordeman M.R. Fujii S. 《Solid-State Circuits, IEEE Journal of》1996,31(4):567-574
This paper describes a 256 Mb DRAM chip architecture which provides up to ×32 wide organization. In order to minimize the die size, three new techniques: an exchangeable hierarchical data line structure, an irregular sense amp layout, and a split address bus with local redrive scheme in the both-ends DQ were introduced. A chip has been developed based on the architecture with 0.25 μm CMOS technology. The chip measures 13.25 mm×21.55 mm, which is the smallest 256 Mb DRAM ever reported. A row address strobe (RAS) access time of 26 ns was obtained under 2.8 V power supply and 85°C. In addition, a 100 MHz×32 page mode operation, namely 400 M byte/s data rate, in the standard extended data output (EDO) cycle has been successfully demonstrated 相似文献
62.
Keishi Sakamoto Atsushi Kasugai Masaki Tsuneoka Koji Takahashi Yukiharu Ikeda Tsuyoshi Imai Takashi Nagashima Mitsuru Ohta Tsuyoshi Kariya Kenichi Hayashi Yoshika Mitsunaka Yosuke Hirata Yasuyuki Itoh Yukio Okazaki 《Journal of Infrared, Millimeter and Terahertz Waves》1997,18(9):1637-1654
A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at PRF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at PRF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window. 相似文献
63.
SiB4±x
and SiB6 plates were prepared by chemical vapour deposition (CVD) using SiCl4, B2H6 and H2 gases under the conditions of deposition temperatures (T
dep) from 1323–1773 K, total gas pressures (P
tot) from 4–40 kPa and B/Si source gas ratio (m
B/Si=2B2H6/SiCl4) from 0.2–2.8. The effects of CVD conditions on the morphology, structure and composition of the deposits were examined.
High-purity and high-density SiB4±x
and SiB6 plates about 1 mm thick were obtained at the deposition rates of 71 and 47 nm s−1, respectively. The lattice parameter, composition and density of CVD SiB4±x
plates were dependent on their non-stoichiometry. The lattice parameter,a, was 0.6325 nm, butc ranged from 1.262–1.271 nm.The B/Si atomic ratio ranged from 3.1–5.0, and the density ranged from 2.39–2.45×103 kg m−3. The CVD SiB6 plates showed constant values of lattice parameters (a=1.444 nm,b=1.828 nm,c=0.9915 nm), composition (B/Si=6.0) and density (2.42×103 kg m−3), independent of CVD conditions. 相似文献
64.
A new type of arc plasma reactor with 12-phase alternating current (AC) discharge for synthesis of carbon nanotubes (CNTs) is proposed. A couple of six discharge electrodes by which have mutually electrical connection between them to enlarge the high-temperature regions in the reactor are arranged to three-dimensional locations. A new method of CNTs fabrication by this reactor, which accomplishes to enlarge the suitable growth region in high purity and at high yield, was developed. 相似文献
65.
Tetsuya Suemitsu Yoshino K. Fukai Hiroki Sugiyama Kazuo Watanabe Haruki Yokoyama 《Microelectronics Reliability》2002,42(1):47-52
The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (Rs) to increase at large drain bias voltages. The increase in Rs can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (Rd) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of Rs should be considered. It is also found that a deep gate recess suppresses the increase in Rd after long-term stressing. 相似文献
66.
A single loop electrochemical potentiokinetic reactivation test method has been developed for alloy 600 that produces good passivation on all the surfaces, good etching during the reactivation scan and no appreciable pitting. It is able to quantify and discriminate between samples with a wide range of degree of sensitization. The Pa value correlates well with the minimum level of chromium in the depletion regions at the grain boundaries. It has been shown that the width of the attacked regions is much larger than the width of chromium depletion regions and it does not show any direct correlation with either depth or width or with a volume parameter of chromium depletion regions. It has been shown that the chromium carbides are not attacked during the test and that the intragranular regions attacked during the test are the sites of chromium carbides in the grain matrix. A modified Pa parameter is shown to be sensitive down to 7.5 wt% chromium in the depletion regions and indicates that the intragranular carbides have shallower depletion profiles than those at grain boundaries. Comparison of the results of the single loop and the double loop tests showed a good correlation. 相似文献
67.
High performance liquid chromatographic separation of a series of mono-, di- and trihydroxylated 5β-cholanic acids which differ
only in position and configuration of hydroxyl groups at positions C-3, C-7 and/or C-12, is reported. The C-24 free acids
were derivatized to four different classes of UV-sensitive esters, i.e.,p-bromophenacyl (BP),m-methoxyphenacyl (MP), 4-nitrophthalimidemethyl (NPM) and 9-anthrylmethyl (AM) esters, and chromatographed on two, variants
of C18 reversed-phase columns (Nova-Pak C18 and Zorbax ODS) with methanol-water systems as mobile phase. Separation efficiency and elution order of some isomeric pairs
were influenced by both the structure of the C-24 ester groups and the nature of the columns used. Excellent chromatographic
properties were found for those derivatives, particularly for the NPM esters. 相似文献
68.
69.
Effective double layer structure was investigated by adding Nb to the sputtering source of Co-Cr thin film perpendicular magnetic recording tapes. The output from the tapes was measured with a ring head through to the short wavelength, λ50 =0.19 μm (D50 =267KFRPI). 相似文献
70.