Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes

We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm²/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process.     

Flexible microelectronics: New application for thin‐film transistors in fingerprint sensors

Abstract— Thin‐film transistors (TFTs) are field‐effect transistors that can be used to create large‐scale‐integrated (LSI) circuits. The combination of high‐performance TFTs and transfer technology of the TFTs has the potential to foster the rise of a new flexible microelectronics industry. This paper discusses the current status of flexible microelectronics, using a TFT fingerprint sensor (FPS) as an example. Technology used in active‐matrix displays can easily be applied to the TFT FPS. TFT technology should not be confined to the display industry; its use should be expanded into the semiconductor industry. With the result presented in this paper, we declare a new era of flexible microelectronics open.     

Performance analysis of a greedy algorithm for inferring Boolean functions

We analyzed average case performance of a known greedy algorithm for inference of a Boolean function from positive and negative examples, and gave a proof to an experimental conjecture that the greedy algorithm works optimally with high probability if both input data and the underlying function are generated uniformly at random.     

Fabrication of 5.8‐in. OTFT‐driven flexible color AMOLED display using dual protection scheme for organic semiconductor patterning

Abstract— A 5.8‐in. wide‐QQVGA flexible color active‐matrix organic light‐emitting‐diode (AMOLED) display consisting of organic thin‐film transistors (OTFTs) and phosphorescent OLEDs was fabricated on a plastic film. To reduce the operating voltage of the OTFTs, Ta₂O₅ with a high dielectric constant was employed as a gate insulator. Pentacene was used for the semiconductor layer of the OTFTs. This layer was patterned by photolithography and dry‐etched using a dual protection layer of poly p‐xylylene and SiO₂ film. Uniform transistor performance was achieved in the OTFT backplane with QQVGA pixels. The RGB emission layers of the pixels were formed by vacuum deposition of phosphorescent small molecules. The resulting display could clearly show color moving images even when it was bent and operated at a low driving voltage (below 15 V).     

A relation between edit distance for ordered trees and edit distance for Euler strings

We consider a relationship between the unit cost edit distance for two rooted ordered trees and the unit cost edit distance for the corresponding Euler strings. We show that the edit distance between trees is at least half of the edit distance between the Euler strings and is at most 2h+1 times the edit distance between the Euler strings, where h is the minimum height of two trees. The result can be extended for more general cost functions.     

Thermodynamic evaluation of the phase equilibria and glass-forming ability of the Fe–Si–B system

A thermodynamic study has been carried out on the Fe–Si–B ternary system, which is important in the development of transformer core materials and Ni-based filler metals. A regular solution approximation based on the sublattice model was adopted to describe the Gibbs energy for the individual phases in the binary and ternary systems. Thermodynamic parameters for each phase were evaluated by combining the experimental results from differential scanning calorimetry with literature data. The evaluated parameters enabled us to obtain reproducible calculations of the isothermal and vertical section diagrams. Furthermore, the glass-forming ability of this ternary alloy was evaluated by introducing thermodynamic quantities obtained from the phase diagram calculations into Davies–Uhlmann kinetic formulations. In this evaluation, the time–temperature-transformation (TTT) curves were obtained, which are a measure of the time required to transform to the minimum detectable mass of crystal as a function of temperature. The critical cooling rates calculated on the basis of the TTT curves enabled us to evaluate the glass-forming ability of this ternary alloy. The results show good agreement with the experimental data in the compositional amorphization range.     

Mechanical strengthening of Si cantilever by chemical KOH etching and its surface analysis by TEM and AFM

Mechanical strengthening of a Si cantilever by applying KOH wet etching was investigated. Two kinds of Si cantilever specimens having the different crystallographic orientations of the sidewall surfaces, i.e., Si{100} and Si{110}, were fabricated from the same SOI wafer by a Bosch process. The typical height and pitch of the scalloping formed on the sidewall were 248 and 917 nm, respectively. A 50 % KOH (40 °C) chemical wet etching was applied to increase the fracture stress of the Si cantilever. The fracture stress in the both of Si{100} and Si{110} cantilevers increased with the advance of the etching. The obtained maximum fracture stress in Si{100} and Si{110} were 4.2 and 3.7 GPa, respectively. Sidewall surface of the cantilever was analyzed to investigate the mechanical strengthening of Si cantilever by wet etching. The etched surface crystalline was analyzed by the transmission electron microscope (TEM), and confirmed that the thickness of the affected flow layer was less than 10 nm from the obtained TEM image. Then the change of the surface roughness by the KOH etching was analyzed by the atomic force microscope. The surface was smoothened with the advance of the KOH etching. The roughness value of Ra in Si{100} and Si{110} decreased to 12.1 and 37.7 nm, respectively.     

Frequency symbol spreading based adaptive subcarrier block selection for OFDMA system

In a wireless network, the signals transmitted from one sender to different users have independent channel fluctuation characteristics. The diversity that exists between users is called multiuser diversity and can be exploited by the sender to enhance the capacity of wireless network. In multiuser diversity OFDMA system, exploiting channel fluctuation diversity is in essence done by selecting the user with the strong subcarrier channels. The individual subcarrier selection for each user can achieve the best system performance but high signaling overhead and high system complexity are required. On the other hand, the adaptive subcarrier block method achieves worse BER than that of individual subcarrier selection. This is because the selected block contains the poor channel subcarriers. To overcome this problem, in this paper, we propose an adaptive subcarrier block selection with frequency symbol spreading for an OFDMA system.     

Electrical properties and microstructure in the system ceria-alkaline earth oxide

The ionic conduction of oxygen in the ceria-alkaline earth oxide system was investigated as a function of temperature, partial pressure of oxygen and oxide composition, together with its crystal structure, density, and microstructure. Undoped ceria and its solid solution with alkaline earth oxides have a cubic fluorite structure. The ionic conductivity of ceria is greatly enhanced by additions of calcia and strontia, even when they are added in excess of the solubility limit. The conductivities of ceria-calcia and ceria-strontia were much higher than those of calcia-and yttria-stabilized zirconia. Up to the limit of calcia and strontia, the ionic transference number was nearly unity in the temperature range between 600 and 900°C. With an increase in calcia and strontia content, the ionic conductivity was little affected by the presence of a second phase of CaO and SrCeO₃.     

Preparation of diamondlike carbon films using nanopulse generator employing SI thyristor

Diamondlike carbon (DLC) films show high hardness, high electric resistivity, and the self‐lubricant characteristic, and many applications and synthesis methods have been reported. Pulse plasma chemical vapor deposition (CVD) is one of the synthesis methods suitable for DLC films on complicated form work, such as molding and extruding die. Ordinary, microsecond‐order pulse is used in this method. This paper describes the development of the synthesis method using nanosecond‐order pulse plasma CVD for DLC films. To realize this process, a static induction (SI) thyristor with an inductive energy storage (IES) circuit was used. Compared with microsecond, nanosecond‐order pulse plasma CVD method shows the characteristics of high electron temperature and exponential relationship between pulse frequency and growth rate. The characteristics of the thus‐obtained DLC films show two broad peaks of the disordered band at 1360 cm^?1 and the graphitic band at 1580 cm^?1 by Raman spectroscopy and hardness of 16.0 GPa and elastic modulus of 170 GPa. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 159(4): 1–7, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20341