Low temperature Si-DLC coatings on fluoro rubber by a bipolar pulse type PBII system

Diamond-like carbon (DLC) films have been attractive materials because of their excellent mechanical properties such as high hardness, low friction coefficient, high wear resistance and more. In order to spread the application of the DLC coatings for polymer materials, it is necessary to make the temperature go down during the coating process.Our group has been studying DLC coatings on several materials with bipolar pulse type PBII (plasma based ion implantation) systems, which consist of positive and negative (or bipolar) pulse generators and a timing controller. Recently we have introduced a new bipolar pulse generator, whose slew-rate is several times larger than that of previous generators, and a controller which can make a very short pulse less than 1 μs. Using the pulse generator and controller, we have tried to make Si incorporated DLC (Si-DLC) coatings on fluoro rubber, which is widely used in many industries, at low temperature.Using the new pulse generator and controller, we can make very short width positive pulse of about 1 μs, and reduce the temperature during Si-DLC coating to about 30 K. The lower temperature makes fewer folds on the sample surface. By using optical indentation microscope system, Meyer hardness (H_M) of uncoated and Si-DLC coated fluoro rubber was obtained and the value of H_M for Si-DLC coated rubber is about 1.4 times larger than that of uncoated rubber. Coefficient of friction of Si-DLC coated rubber was 0.2 to 0.25 and drastically decreased from 1.3 to 1.9 of uncoated rubber. Wear of uncoated fluoro rubber is apparent, however, wear of Si-DLC coated rubber cannot be observed, except for the creep effect of fluoro rubber substrate. The counter SUJ2 ball surfaces also showed almost no wear. Si-DLC coating can make the tribological property of fluoro rubber to low friction and less wear. Si-DLC coatings are very useful in many applications.     

Multi-junction III–V solar cells: current status and future potential

Our recent R&D activities of III–V compound multi-junction (MJ) solar cells are presented. Conversion efficiency of InGaP/InGaAs/Ge has been improved up to 31–32% (AM1.5) as a result of technologies development such as double hetero-wide band-gap tunnel junction, InGaP–Ge hetero-face structure bottom cell, and precise lattice-matching of InGaAs middle cell to Ge substrate by adding indium into the conventional GaAs layer. For concentrator applications, grid structure has been designed in order to reduce the energy loss due to series resistance, and world-record efficiency InGaP/InGaAs/Ge 3-junction concentrator solar cell with an efficiency of 37.4% (AM1.5G, 200-suns) has been fabricated. In addition, we have also demonstrated high-efficiency and large-area (7000 cm²) concentrator InGaP/InGaAs/Ge 3-junction solar cell modules of an outdoor efficiency of 27% as a result of developing high-efficiency InGaP/InGaAs/Ge 3-junction cells, low optical loss Fresnel lens and homogenizers, and designing high thermal conductivity modules.Future prospects are also presented. We have proposed concentrator III–V compound MJ solar cells as the 3rd generation solar cells in addition to 1st generation crystalline Si solar cells and 2nd generation thin-film solar cells. We are now developing low-cost and high output power concentrator MJ solar cell modules with an output power of 400 W/m² for terrestrial applications.     

Over 27% efficiency GaAs/InGaAs mechanically stacked solar cell

We have applied an InGaAs solar cell (band GAP = 0.75 eV) to the bottom cell of the super-high-efficiency tandem solar cell aiming an over 35% conversion efficiency. The InGaAs cell which is lattice-matched to the InP substrate showed the efficiency of 5.5% under the GaAs substrate with low carrier concentration. Combining with the GaAs cell by means of a mechanically stacking technique, we obtained an efficiency of 28.8% at air mass (AM) 1.5, 1-sun. This result suggests the possibility of the cells with the efficiency of over 35% with combining a GalnP/GaAs monolithic tandem cell and the InGaAs cell (or InGaAsP cell).     

Analysis of piezoelectric boundary acoustic wave in Cu electrode/Y-cut X-propagating LiNbO3 substrate structure partially covered with SiO2

This paper describes the existence of piezoelectric boundary acoustic wave (PBAW) propagating in a Cu electrode/Y-cut X-propagating (YX) LiNbO(3) substrate structure partially covered with a SiO2 layer. In the analysis, two types of structures are taken into consideration: one is the so-called slotted structure with SiO2 pillars placed in the grating slots; the other is the so-called topped structure with SiO(2) pillars placed on the top of grating electrodes. The top surface could be fully covered with an additional layer (like epoxy) to bridge the grating slots for encapsulation. Results show that SH-type PBAW begins to propagate in the slotted structure when the SiO(2) thickness exceeds 0.3 wavelength. Strong electromechanical coupling factor K(2) of 21%, and temperature coefficient of velocity (TCV) of -33 ppm/°C are obtained. In the topped structure, on the other hand, the boundary acoustic wave mode is not supported. Instead, the thickness resonance modes in the SiO2 pillar do exist. Comparison of the obtained results with those in the structure fully covered with the SiO(2) layer indicates that, as for the PBAW mode, the slotted structure offers improved K(2) but with worse TCV compared with the fully covered SiO(2) structure.     

Characteristics of hydrophobicity loss on silicone rubber surface during a dynamic drop test with direct current voltage application

Dynamic drop test for studying the temporal lowering of hydrophobicity on the surface of silicone rubber with direct current voltage application was carried out. In this study, we evaluated the influence of the temporal lowering of hydrophobicity under various conductivities and dropping rates for water droplets. As a result, it was found that the dropping rate and the conductivity of water droplets greatly influenced the hydrophobicity loss time on the surface of silicone rubber.     

PCDDs, PCDFs, and coplanar PCBs in albatross from the North Pacific and Southern Oceans: levels, patterns, and toxicological implications

Concentrations of polychlorinated dibenzo-p-dioxins (PCDDs), polychlorinated dibenzofurans (PCDFs), and coplanar polychlorinated biphenyls (coplanar PCBs) were determined in five albatross species collected from the North Pacific and Southern Oceans to assess the north-south differences in residue levels, accumulation patterns, and toxic potential. Black-footed and Laysan albatrosses from the North Pacific Ocean contained higher levels of PCDD/Fs and coplanar PCBs than albatrosses from the Southern Ocean, indicating that emission sources of these contaminants were predominant in the northern hemisphere. Residue levels in albatrosses from the remote North Pacific Ocean far from the point source of pollution were comparable to or higher than those in terrestrial and coastal birds from contaminated areas in developed nations, suggesting the specific exposure and accumulation of PCDD/Fs and coplanar PCBs in albatross. The long life span and ingestion of plastic resin pellets by albatrosses could be the plausible explanations for the elevated accumulation of persistent and lipophilic contaminants including PCDD/Fs and coplanar PCBs in these birds. Relative proportions of PCDFs and coplanar PCBs in albatross were higher than those observed in birds inhabiting terrestrial and coastal areas, suggesting that these toxic chemicals may have higher transportability by air and water than PCDDs. Congener patterns of PCDD/Fs in albatross showed less variability as compared to those in terrestrial species, indicating that contamination patterns of PCDD/Fs were similar within the open ocean environment. Contributions of PCDD/Fs to total TEQs in albatrosses from the open ocean were generally lower than those in terrestrial birds, suggesting different toxic potency of PCDD/Fs and coplanar PCBs on animals inhabiting open ocean and terrestrial environment. Whereas albatrosses from southern oceans retained lower TEQ concentrations, possible adverse effects of PCDD/Fs and coplanar PCBs to black-footed and Laysan albatrosses of the North Pacific Ocean may be suspected from TEQ levels.     

The Use of Transition-Metal Silicides to Reduce the Contact Resistance Between the Electrode and Sintered n-Type Mg2Si

The electrical and thermoelectric characteristics of n-type Mg₂Si equipped with electrodes of Ni and the transition-metal silicides CoSi₂, CrSi₂, TiSi₂, and NiSi were examined. To form the electrodes on the Mg₂Si matrix, a monobloc sintering method, i.e., simultaneous sintering of the electrode material during Mg₂Si sintering, was used. To obtain dense electrodes and to keep an appropriately low sintering temperature for the Mg₂Si matrix, a Ni binder was used for the CoSi₂, CrSi₂, and TiSi₂ monobloc sintering. The mixture ratio between the transition-metal silicide and the Ni was 50:50 in wt.%. The room-temperature I?CV characteristics of the fabricated CoSi₂, CrSi₂, and TiSi₂ electrodes with the Ni binder and NiSi electrodes were considered to be adequate for practical applications in as much as ohmic contacts were obtained. The contact resistance at the Mg₂Si/electrode interface decreased by 35% and 28%, respectively, for the CoSi₂ and CrSi₂ electrodes compared with our standard Ni electrode. The thermoelectric power output was measured at the practical operating temperature of 600?K, with ??T?=?500?K. The observed output powers for 3.0?mm?×?3.0?mm?×?7.5?mm samples equipped with CoSi₂, CrSi₂, and NiSi electrodes were 153?mW, 149?mW, and 125?mW, respectively, representing increases of 27%, 24%, and 4%, respectively, compared with the 120?mW measured for the sample with Ni electrodes.     

Fates of foodborne pathogens in raw hams manufactured rapidly using a new patented method

To manufacture raw ham in an efficient manner, we recently developed a new system in which presliced pork loin was used, and the processing time was reduced to 5% of the conventional method. This study aimed to examine whether this raw ham could be as safe as ham produced by the conventional method. Pork loin spiked with enterohemorrhagic Escherichia coli serotype O157:H7, Listeria monocytogenes serotype 1/2c, Salmonella enterica serovar Enteritidis, and Staphylococcus aureus were processed using either the new or conventional method. The fate of the foodborne pathogens and behavior of hygiene indicator bacteria were examined. Whereas nitrite had disappeared during the conventional packaging process, the reduced processing time in the new system allowed for the ham to be vacuum packed with retention of the nitrite (6.9±1.2 ppm, P<0.01). This accounts for the prominent decrease in L. monocytogenes (2.3 log reduction in 35 days) and S. aureus (3.3 log reduction in 13 days) counts during storage. E. coli O157 and Salmonella Enteritidis were likely resistant to the nitrite in the ham. However, they were unable to multiply in the ham and decreased gradually as in the conventionally produced ham. The bacteriostatic nature of the raw ham was also indicated by the gradual decrease in coliforms (1.3 log reduction in 13 days) in nonspiked ham. In conclusion, the raw ham produced using presliced pork loin is practically as safe as conventionally produced raw ham. It is worth validating these results in a small-scale production setting.