Modellierungs- und Simulationsverfahren für die optische Verbindungstechnik auf elektrischen Leiterplatten

Optical interconnection technology on the printed circuit board level is a key technology for future microelectronic equipment. The consideration of functional, technological, and economical requirements results in a hybrid solution, where electrical and optical interconnects are integrated into one substrate called electrical optical printed circuit board. The significant part of the entire design process for electrical optical printed circuit boards is marked by the design supporting modelling and simulation of optical interconnects. Based on an abstract model for an entire optical interconnect a simulation model for optical multimode-waveguides is presented, taking into account all significant waveguide properties. Apart from that, the modeling of active components (laser- and photo-diodes) is addressed.     

Untersuchung der Verteilung und Intensität filamentierter Barrierenplasmen für die Behandlung von Oberflächen

The application of barrier discharges at atmospheric pressure in air expands on the market of plasma technology, because it is an ecological and cost‐effective alternative to other processes of surface treatment. These plasmas usually consist of a multitude of spatially and temporally localized filaments, whose distribution should be as even as possible for homogeneous treatment. This holds especially for the plasma treatment of sensitive goods such as wool or other textiles. In equipment for continuous pass of material the barrier arrangements often consist of a system cylinder – cylinder or cylinder – plane, whereby the gap width changes locally. Space distribution and intensity of filaments has been investigated by means of short‐time photography and spatially resolved measurement of current distribution and energy distribution derived from it. The local dependency found can be explained by means of a capacitive equivalent circuit.     

On the linear correlation between microhardness and mechanical properties in polar polymers and blends

The tensile elastic modulus (E), yield stress (σ_Y) and microhardness (MH) of neat and binary and ternary blends of glassy semicrystalline ethylene–vinyl alcohol copolymer (EVOH), a glassy amorphous polyamide and a semicrystalline nylon‐containing ionomer covering a broad range of properties were examined. The tests were carried out on dry and water‐equilibrated samples to produce stiffer and softer materials, respectively. From the results, more accurate linear correlations were found to describe adequately the microhardness, modulus and yield stress of these strongly self‐associated polymers through hydrogen bonding. Copyright © 2003 Society of Chemical Industry     

Effect of Strain Rate on Discontinuous Flow and Mechanical Characteristics of High-Nitrogenous Steel

Experimental study on the effect of strain rate on discontinuous flow and mechanical characteristics of the high-nitrogenous steel Kh23AG19F has been performed. Within the range of strain rates from 4.62 · 10^-5 to 1.85 · 10 ^-4 s^-1, discontinuous flow, reflected by serration on the tensile diagram, is chiefly determined by intergranular deformation mechanisms. Under strain rates over 1.85 · 10^-2 s^-1, combined deformation modes prevail, which cause a change in the character of discontinuous flow and transform a serrated tensile diagram into a wavy graph, with the yield stress of steel increased significantly.     

Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures

The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E _g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E _g (including the case of CO₂ laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T _c = 45 K); at higher temperatures, the effect disappears.     

Synthesis of an isotropic reradiator for suppression of TE-polarized wave scattering by a perfectly conducting cylinder

The problem of synthesis of an isotropic reradiator providing for the transparency of a circular perfectly conducting cylinder illuminated by a TE-polarized plane wave is investigated. A general solution to the problem of diffraction from the cylinder with a reradiator is obtained, and a system of nonlinear equations for the synthesis problem is derived. Numerical solution of the synthesis problem is illustrated by a number of examples.     

Power-aware network swapping for wireless palmtop PCs

Virtual memory is considered to be an unlimited resource in desktop or notebook computers with high storage capabilities. However, in wireless mobile devices, like palmtops and personal digital assistants (PDAs), storage memory is limited or absent due to weight, size, and power constraints, so that swapping over remote memory devices can be considered as a viable alternative. However, power-hungry wireless network interface cards (WNICs) may limit the battery lifetime and application performance if not efficiently exploited. In this paper, we study performance and energy of network swapping in comparison with swapping on local microdrives and flash memories. We report the results of extensive experiments conducted on different WNICs and local swapping devices, using both synthetic and natural benchmarks. Our study points out that remote swapping over power-manageable WNICs can be more efficient than local swapping, especially in bursty workload conditions. Such conditions can be forced where possible by reshaping swapping requests to increase energy efficiency and performance.