首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1536547篇
  免费   25904篇
  国内免费   7002篇
电工技术   34363篇
综合类   6508篇
化学工业   273648篇
金属工艺   64296篇
机械仪表   42956篇
建筑科学   47865篇
矿业工程   11410篇
能源动力   50462篇
轻工业   118971篇
水利工程   15545篇
石油天然气   37301篇
武器工业   136篇
无线电   197040篇
一般工业技术   290038篇
冶金工业   172217篇
原子能技术   33853篇
自动化技术   172844篇
  2021年   15830篇
  2020年   12013篇
  2019年   14834篇
  2018年   15159篇
  2017年   14288篇
  2016年   21379篇
  2015年   17635篇
  2014年   29060篇
  2013年   88392篇
  2012年   36832篇
  2011年   49369篇
  2010年   42732篇
  2009年   50840篇
  2008年   45997篇
  2007年   43219篇
  2006年   46135篇
  2005年   40292篇
  2004年   42816篇
  2003年   42581篇
  2002年   41608篇
  2001年   38525篇
  2000年   36781篇
  1999年   35779篇
  1998年   47409篇
  1997年   40874篇
  1996年   36536篇
  1995年   31663篇
  1994年   29686篇
  1993年   29243篇
  1992年   26609篇
  1991年   23688篇
  1990年   23954篇
  1989年   23021篇
  1988年   21508篇
  1987年   19766篇
  1986年   19233篇
  1985年   22627篇
  1984年   22725篇
  1983年   20618篇
  1982年   19475篇
  1981年   19528篇
  1980年   18120篇
  1979年   18775篇
  1978年   17946篇
  1977年   18033篇
  1976年   19618篇
  1975年   16126篇
  1974年   15657篇
  1973年   15730篇
  1972年   13217篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
991.
Two novel configurations for digitally tunable optical filters based on arrayed-waveguide grating (AWG) multiplexers are described in detail with emphasis on the connection of the AWG multiplexer and optical switches. Performance comparisons show that conventional configurations are disadvantaged by the switch size required and loss imbalance among the optical frequency-division-multiplexed (FDM) channels; the proposed configurations require only O(√(N)) switch elements to select one of N FDM channels, and the loss imbalance is lower by up to 75% in decibel  相似文献   
992.
Network fault identification is an important network management function, which is closely related to fault management and has an impact on other network management functions such as configuration management, and performance management. This paper investigates fault surveillance and fault identification mechanisms for a transparent optical network in which data travels optically from the source node to the destination node without going through any optical-to-electrical (O/E) or electrical-to-optical (E/O) conversion. Mechanisms and algorithms are proposed to detect and isolate faults such as fiber cuts, laser, receiver, or router failures. These mechanisms allow nonintrusive device monitoring without requiring any prior knowledge of the actual protocols being used in the data transmission  相似文献   
993.
A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P+ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor  相似文献   
994.
Single-phase voltage source power converters (VSCs) under consideration are AC-DC current-controlled boost-type power converters with bidirectional power-handling capability. Equivalence between two series-connected two-level power converters and a single three-level power converter is considered here. Further considered is the series operation of three-level power converters. Simulation results and experimental verification for both are provided. Economical configurations of three-level power converters leading to multilevel waveforms are presented thereafter  相似文献   
995.
A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices  相似文献   
996.
Brennstoffzellen     
For two applications of fuel cells (SOFC and IMFC) system configurations and energy balances are presented. A decentralized combined heat and power plant on SOFC basis can be designed as a flexible system with high efficiency. A drive system with methanol reformer and fuel cell (IMFC) in comparison with a natural gas combustion engine has lower energy comsumption and much lower emissions.  相似文献   
997.
A simple phenomenological model for giant magnetoresistance (GMR) is employed for current and field parallel (CIP) to the magnetic multilayer planes in ordinary and discontinuous multilayer films. To our knowledge, it is the first model to include hysteresis in the field (H) dependence of the GMR. The computed GMR versus H curves qualitatively reproduce the GMR hysteresis seen experimentally. In particular, two GMR peaks are found to be symmetrically placed about H=0, and the GMR hysteresis curve itself is found to have an inverted butterfly shape. Also seen in the computed results is the general increase in GMR magnitude found for annealed discontinuous multilayer films. Various parameter variations are examined in the computed results. While the model reproduces GMR hysteresis quite well and the general increase in GMR for discontinuous multilayer films, it does not, in its present form, account for the oscillations seen in the GMR when the nonmagnetic layer thicknesses are varied, which is expected as a strictly quantum mechanical result  相似文献   
998.
Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×1015cm-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×1015cm-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.  相似文献   
999.
The water sorption behaviour of several cross-linked gelatin-based systems were investigated and compared. The systems were gelatin, gelatin/ethyleneglycol, gelatin/polyoxypropylenediamine, and gelatin/polyethylene oxide. For all the systems, an increased water gain was obtained by raising the concentration of the second component, while the swelling was reduced by an increase of the cross-linking density. This revised version was published online in November 2006 with corrections to the Cover Date.  相似文献   
1000.
A light-induced excited spin state trapping (LIESST) experiment for a thermal gradual spin crossover complex, Fetris (2-pyridylmethyl) amine(NCS)2 or Fe(tpa) (NCS)2, was attempted for the first time. The high spin (HS) state after light inducement stayed metastable over a period of days without relaxation at 10 K. Intersystem relaxation from a high to a low spin (LS) complex occurred at 50 K after bleaching at 10 K. Investigation of the Mossbauer spectra of the LIESST and relaxation experiment indicated that the Debye–Waller factor was a correlation parameter of the HS fraction and that the co-operative effect played a role in the relaxation process for such a solid compound. This revised version was published online in November 2006 with corrections to the Cover Date.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号