Multiple-symbol detection of MPSK in narrow-band interference andAWGN

We propose a new technique for rejection of narrow-band interference (NBI) based on multiple-symbol detection of coherent or differential phase-shift keying (DPSK). We first show that the direct use of multiple-symbol detection offers poor performance when NBI is dominant. Our proposed technique employs a special signaling or coding scheme which is shown to be robust against NBI. The evaluation of bit-error rate (BER) shows significant performance improvement in NBI vis-a-vis direct multiple-symbol detection. When viewed as a coding scheme, the proposed signaling scheme is significantly simpler for achieving the same coding gain than conventional error correction codes     

B—ISDN宽带UNI信令点到多点配置的实现

本文根据ＩＴＵ－Ｔ最新的Ｑ．２９７１协议，以及笔者所从事的实际课题，提出一整套Ｂ－ＩＳＤＮ第三层ＵＮＩ信令的软件实现策略，其特点是能同时满足用户对点到点以及点到多点广播这两种通信方式的要求，而且可以动态配置。     

多级放大频分复用系统中四波混频串扰的消除

本文从理论上研究了四波混频在多级放大频分复用光通信系统中的特性，提出了一种消除四波混频串扰的新方法，该方法只需适当选择信道间隔，无需增添其它器件，因而更有利于在实际光通信系统当中的应用。     

金刚石高成核选择比图形化技术

报道了一种新的金刚石薄膜选择生长图形化技术。首先用直流偏压增强的微波等离子体化学气相沉积（ＭＰＣＶＤ）对图形区域（Ｓｉ）高密度金刚石成核，接着对掩模区域（ＳｉＯ２）进行一次化学浅腐蚀，然后正常生长金刚石薄膜，得到表面光滑、侧壁陡直的金刚石精细图形。用该技术制作了金刚石微马达结构，其厚度为２μｍ，转子直径１５０μｍ。图形间隙可控制至１－２μｍ。     

相关杂波的AR谱模型及其研究

研究了相关雷达杂波功率谱特性的ＡＲ模型及其模拟方法，提出了具有约束条件的修正ＬＥＶＩＳＯＮ递推算法和ＡＲ模型阶数估计方法，并与现有功率谱估计方法进行了比较，同时给出了计算机模拟结果。     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Phase equilibria in InAsSbP quaternary alloys grown by liquid phase epitaxy

The quaternary alloy InAs_1−x−ySb_xP_y, lattice-matched to InAs, is a promising material for the production of infrared light sources for the detection of gases in the 2–4 μm region of the spectrum. In this work, thermodynamic phase equilibrium calculations have been carried out to determine the compositions required for liquid phase epitaxial growth and the extent of the miscibility gap in the solid material. For high band gap materials, the desired growth temperature is found to be intermediate between a low temperature required to grow P-rich solids and higher temperatures required to avoidspinodal decomposition. Conventional LPE growth at an intermediate temperature of 583°C is found to produce good material with high luminescence efficiency and excellent optical characteristics. Problems with phosphorus loss from the melt are also discussed and lower growth temperatures are found to considerably reduce this problem. Growth in the metastable region between the binodal and spinodal lines has been achieved with the production of phosphorus-rich solids with concentrations up to y = 0.445.     

金刚石薄膜的红外增透性

以 CH_3COCH_3/H_2为工作气体,用 HFCVD 方法,制备出适用于红外光学的金刚石薄膜。用 SEM 观察到了所制备膜的表面晶形。讨论了金刚石薄膜的红外增透性。     

混流式水轮机叶片数控加工工艺过程

本文以5轴数控联动铣削混流式叶片的实际加工过程为依据,详细地论述了混流式叶片加工的工艺、卡具和刀具的准备、加工时叶片的装卡、测量、铣削和检查的全过程以及在加工中应给予重视的一些问题。