Effect of Heat Treatment on Plasma-Sprayed Zircon (ZrSiO ZrSiO4)

The effect of heat treatment on the structure and properties of a plasma-sprayed zircon coating was evaluated. The as-sprayed coating, with open porosity of 10%, is composed of t-ZrO₂ and amorphous SiO₂ After heat treatment at 1473 K, ZrO₂ grows in columnar shape perpendicular to the coating surface, while SiO₂ crystallizes to cristobalite. The open porosity decreases to about 5% after the heat treatment. This can be attributed to the sintering of SiO₂ and the phase transformation of zirconia. When heat-treated at 1673 K, the coating is composed of ZrSiO₄ with dispersed fine m-ZrO₂ The open porosity increases again up to 10%. The thermal conductivity of the zircon coating increases with increasing heat treatment temperature.     

同步辐射X射线衍射与DSC相结合研究油脂的物性及其动力学机理的进展

介绍了将同步辐射X射线衍射和DSC相结合,用于油脂的结构和物化性质研究的新技术,以及在该领域的研究进展。     

Multiresidue analysis of pesticides in agricultural products by GC/MS coupled with database software

We evaluated a multiresidue method for determination of pesticides in agricultural products by SCAN mode GC/MS coupled with three kinds of database for 253 pesticides: relative retention time, mass spectra and calibration curve (SCAN method). Twenty-six pesticides, a total of 131 pesticides were detected in samples by the SCAN method. The detection results agreed closely with those of the SIM mode GC/MS method using calibration standards (SIM method). The ratios of the SCAN method to the SIM method ranged from 0.3 to 3.1 with SD values of 0.63. It was judged that the SCAN method could be applied to the screening analysis of pesticide residues in agricultural products, provided that the sample preparation method makes it possible to effectively remove sample matrixes with minimal loss of analytes.     

Analysis of energy consumption of elevator group supervisory control system based on genetic network programming

Elevator Group Supervisory Control System (EGSCS) is a traffic system, which provides the transportation services for passengers in modern buildings. As the elevator systems include uncertainty due to the future arrival of the passengers, it difficult to model, analyze, and optimize the elevator group supervisory control system. Recently, artificial intelligence technology has been used in such complex systems. Genetic Network Programming(GNP), a graph‐based evolutionary method extended from genetic algorithm and genetic programming, has been already applied to EGSCS. On the other hand, since energy consumption is becoming one of the greatest challenges in the society, it should be taken as one of the criteria of the elevator operations. The elevators with maximum energy efficiency are therefore required. In this paper, the GNP is used to solve EGSCS with energy consumption (EC). Moreover, the idle car assignment has been embedded in the proposed method. Finally, the simulations show that some factors should be introduced into GNP in order to deal with the higher EC in the light traffic of the elevator systems. © 2011 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

The Versatile Manipulations of Self-Assembled Proteins in Vaccine Design

Protein assemblies provide unique structural features which make them useful as carrier molecules in biomedical and chemical science. Protein assemblies can accommodate a variety of organic, inorganic and biological molecules such as small proteins and peptides and have been used in development of subunit vaccines via display parts of viral pathogens or antigens. Such subunit vaccines are much safer than traditional vaccines based on inactivated pathogens which are more likely to produce side-effects. Therefore, to tackle a pandemic and rapidly produce safer and more effective subunit vaccines based on protein assemblies, it is necessary to understand the basic structural features which drive protein self-assembly and functionalization of portions of pathogens. This review highlights recent developments and future perspectives in production of non-viral protein assemblies with essential structural features of subunit vaccines.     

Fabrication and piezoelectric properties of BaTiO3/BaTiO3-Bi(Mg1/2Ti1/2)O3-BiFeO3 composites

We fabricated xBaTiO₃ (BT)/(1-x)[BaTiO₃-Bi(Mg_1/2Ti_1/2)O₃-BiFeO₃] (BT-BMT-BF)?+?0.1?wt%MnCO₃ composites by spark plasma sintering and investigated the effect of BT content x, BT powder size, and BT-BMT-BF composition on piezoelectric properties. For xBT/(1-x)(0.3BT-0.1BMT-0.6BF) +?0.1?wt%MnCO₃ (x?=?0–0.75) composites with a 0.5-µm BT powder, the dielectric constant was increased with x, and the relative density was decreased at x?=?0.67 and 0.75, creating optimum BT content of x?=?0.50 with a piezoelectric constant d₃₃ of 107?pC/N. When a larger 1.5-µm BT powder was utilized for the composite with x?=?0.50, the d₃₃ value increased to 150?pC/N due to the grain size effect of the BT grains. To compensate for a compositional change from the optimum 0.3BT-0.1BMT-0.6BF due to partial diffusion between the BT and 0.3BT-0.1BMT-0.6BF grains, a 0.5BT/0.5(0.275BT-0.1BMT-0.625BF)?+?0.1?wt%MnCO₃ composite with the 1.5-µm BT powder was fabricated. We obtained an increased d₃₃ value of 166?pC/N. These results provided a useful composite design to enhance the piezoelectric properties.     

Reversible and Precisely Controllable p/n‐Type Doping of MoTe2 Transistors through Electrothermal Doping

Precisely controllable and reversible p/n‐type electronic doping of molybdenum ditelluride (MoTe₂) transistors is achieved by electrothermal doping (E‐doping) processes. E‐doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n‐type) doping and exposure to air, which induces hole (p‐type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe₂ surface, and allows the accurate manipulation of p/n‐type electrical doping of MoTe₂ transistors. Because no dopant or special gas is used in the E‐doping processes of MoTe₂, E‐doping is a simple and efficient method. Moreover, through exact manipulation of p/n‐type doping of MoTe₂ transistors, quasi‐complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E‐doping, adopted in obtaining p/n‐type doping of MoTe₂ transistors undoubtedly has provided an approach to create the electronic devices with desired performance.     

Radiation-induced polymerization of ethylene in a pilot plant. I. Bulk process

Radiation-induced bulk polymerization of ethylene was carried out with use of a pilot plant with a 10 liter reactor at pressures of 225–400 kg/cm², temperatures of 30–95°C, ethylene feed rates of 5–28 kg/hr, and dose rate of 3.8 × 10⁵ rad/hr. Characteristics of the process are mild polymerization conditions and capability of producing medium density polyethylene in powder form. The spacetime yield and molecular weight of polymer were in the range of 3.5 to 13.1 g/liter hr and 2.2 × 10⁴ to 14 × 10⁴, respectively. The space-time yield increased with mean residence time and 2.4 powders of pressure, and decreased with temperature. Molecular weight changed similarly with the reaction conditions. These results were consistent with those of the bench plant experiment and the scale effect was small. Polymer deposit to the reactor wall limited a period of continuous operation of the plant. The amount of deposited polymer was increased with the square of reaction time. The rate of polymer deposit was proportional to polymer concentration and to the cube of pressure. The polymer deposit cannot be solved in the bulk process.