Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).     

Static energy reduction techniques for microprocessor caches

Microprocessor performance has been improved by increasing the capacity of on-chip caches. However, the performance gain comes at the price of static energy consumption due to subthreshold leakage current in cache memory arrays. This paper compares three techniques for reducing static energy consumption in on-chip level-1 and level-2 caches. One technique employs low-leakage transistors in the memory cell. Another technique, power supply switching, can be used to turn off memory cells and discard their contents. A third alternative is dynamic threshold modulation, which places memory cells in a standby state that preserves cell contents. In our experiments, we explore the energy and performance tradeoffs of these techniques. We also investigate the sensitivity of microprocessor performance and energy consumption to additional cache latency caused by leakage-reduction techniques.     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

Simulating strength and failure in engineering plant

Current features are considered in the calculation of carrying capacities for constructions in engineering plant (EP). Methods and algorithms are described for EP calculations with comprehensive incorporation of the effects from technological and working defects on the behavior of structures under standard and emergency conditions. __________ Translated from Khimicheskoe i Neftegazovoe Mashinostroenie, No. 8, pp. 38–40, August, 2006.     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

Motive Force in a Complex Model of Mass Transfer

Relations for determining a motive force in a complex model of mass transfer as applied to concurrent, countercurrent, and cross motion of the vapor and liquid phases have been introduced. These forces have been compared for different forms of organization of the flow, and their comparison with similar quantities from the known Murphree and Hausen models is presented.     

X-ray diffraction and Raman scattering in SbSI nanocrystals

Lattice structure and rod-like shaped SbSI nanocrystals obtained by ball milling with rod thickness down to 70 nm, as estimated from X-ray diffraction (XRD) and electron microscopy, is similar to that of the bulk crystals. The dependence of the grain size on the milling duration is discussed in view of the chain-like crystalline structure of SbSI. Possible factors, responsible for the observed Raman line broadening, are discussed, scattering by surface phonons being considered the predominant one.     

Spectral properties of diesel fuel droplets

Absorption spectra of several types of diesel fuel are studied experimentally. Index of refraction of these fuels is calculated using subtractive Kramers-Krönig analysis. The ageing process of fuels is simulated by prolonged boiling. Radiative properties of diesel fuel droplets are calculated using the Mie theory and a simplified approach, based on approximations of absorption and scattering efficiency factors. It is pointed out that the accuracy of the simplified approach is sufficient for practical applications in the visible and infrared ranges, for various types of diesel fuel, and for droplet radii in the range from 5 to 50 μm. The monodisperse approximation is shown to be applicable for the analysis of infrared radiative properties of realistic polydisperse diesel fuel sprays.     

Classification of audio radar signals using radial basis function neural networks

Radial basis function (RBF) neural networks are used to classify real-life audio radar signals that are collected by a ground surveillance radar mounted on a tank. Currently, a human operator is required to operate the radar system to discern among signals bouncing off tanks, vehicles, planes, and so on. The objective of this project is to investigate the possibility of using a neural network to perform this target recognition task, with the aim of reducing the number of personnel required in a tank. Different signal classification methods in the neural net literature are considered. The first method employs a linear autoregressive (AR) model to extract linear features of the audio data, and then perform classification on these features, i.e, the AR coefficients. AR coefficient estimations based on least squares and higher order statistics are considered in this study. The second approach uses nonlinear predictors to model the audio data and then classifies the signals according to the prediction errors. The real-life audio radar data set used here was collected by an AN/PPS-15 ground surveillance radar and consists of 13 different target classes, which include men marching, a man walking, airplanes, a man crawling, and boats, etc. It is found that each classification method has some classes which are difficult to classify. Overall, the AR feature extraction approach is most effective and has a correct classification rate of 88% for the training data and 67% for data not used for training.     

Mechanical spectroscopy in commercial Fe–6 wt.% Si alloys between 400 and 1000 K

Mechanical spectroscopy, neutron diffraction and differential scanning calorimetry (DSC) were performed on commercial Fe–6 wt.% Si alloy after quenching from high temperature. The damping spectrum shows a peak at around 800 K and an associated modulus defect. The modulus shows an increase during the second and subsequent heating runs. In addition, an anomaly in the modulus behavior has been found at around 400 K. Different thermal treatments allows to obtain two different recovery degrees of the quenched-in defects. The influence of the recovery degree on the 800 K internal friction peak and on the anelastic modulus has been evaluated and confirm the validity of the grain boundary mechanism associated to this peak. Experimental results are discussed on the basis of recovery and ordering processes.