A preliminary analysis of the biomass energy production potential in Africa in 2025 considering projected land needs for food production

This paper provides a preliminary examination of present and projected land use in Africa to estimate the potential availability of land in 2025 for use in producing biomass energy. Fifty countries are included in the analysis. Future cropland requirements are projected on the basis of average African cereal crop yield improvements since 1972, and minimum nutritional requirements are assumed to be met in 2025 without increasing imports above present absolute levels. Cropland, natural forests and other wilderness areas are excluded from consideration for biomass energy use. Woody biomass energy yields are estimated on the basis of nationally averaged precipitation, using a yield-precipitation correlation for commercial eucalyptus plantations in Brazil. The total African bioenergy production potential in 2025 is estimated to be about 18 EJ per year for a set of baseline assumptions that includes planting only 10% of the available non-crop, non-forest, non-wilderness area with biomass energy crops. A preliminary cost assessment suggests that much of this biomass could be produced for $1–2 GJ⁻¹. A number of uncertainties in the modelling assumptions are examined through a sensitivity analysis. Despite limitations in the model used here, one robust conclusion is that Africa as a whole has a significant biophysical potential for producing biomass energy. This result suggests that more detailed country and sub-country level assessments would be worthwhile to understand better the practical prospects for future biomass energy production in Africa.     

Formulation Factors Affecting Thimerosal Stability

A high-performance liquid chromatographic (HPLC) assay has been developed for thimerosal and some of its degradation products: thiosalicylic and 2,2'-dithiosalicylic acids. Using this method, the influence of formulation factors as: isotonic agent, initial concentration, addition of tromethamine, pH and container material, over thimerosal stability was studied.     

Small-signal modeling and control of the quasi-square-wave boostconverter

Sampled-data techniques are used to examine the dynamic characteristics and closed-loop performance of the quasi-square-wave boost converter. Direct duty-ratio control and current-mode control are considered. With direct duty-ratio control, the system poles remain well damped under all load conditions, and there is no zero in the control-to-output transfer function. Good closed-loop performance is therefore achieved. Under current-mode control, the requirement for a stabilizing ramp is seen to depend on load conditions, and the achievable voltage control-loop bandwidth is smaller than that using direct duty-ratio control; however, there is a significant reduction in the magnitude of the DC source to output-voltage frequency response     

Ambulatory subcutaneous internal sphincterectomy]

The internal anal sphincterotomy operation represents the best therapy for the treatment of those anal lesions, above all anal fissures, which cause hypertrophy and spasms of the internal anal sphincter. The Authors report their experience of 253 operations of internal subcutaneous sphincterotomy carried out between 1989 and 1995 under local anaesthesia in the outpatient clinic. The excellent results achieved prove that the procedure can easily be carried out under local anaesthesia in an outpatient clinic and, therefore, it is preferable to the surgical technique of isolation of the internal sphincter, not only for its practicality but also for the improved results.     

High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K