High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE

High-power lattice-strained AlGaAs/InGaAs graded index separate-confinement heterostructure (GRINSCH) quantum-well lasers emitting at a 980-nm wavelength have been grown by organometallic vapor phase epitaxy (OMVPE) and fabricated with a self-aligned ridge-waveguide structure. Using a 3- mu m-wide and 750- mu m-long AR-HR coated laser, 30 mV of optical power was coupled into optical fibers with 28.6% efficiency. A dominating single-lobe far-field radiation pattern was obtained from a wedge-shaped ridge-waveguide laser for output power as high as 240 mW with a maximum output power of 310 mW.<>     

Regulating contents and furnishings.

The criteria in the 1991 edition of the Life Safety Code are a first attempt to address the fire hazards associated with upholstered furniture and mattresses. Recognizing that the criteria do not represent a complete hazard analysis, it is anticipated that the subcommittee will continue its efforts and will evaluate the appropriateness of additional criteria. The NFPA Standards Council also has appointed a Technical Committee on Contents and Furnishings, which will meet in August 1991. This committee will have primary responsibility for developing fire hazard calculation procedures and documents that other committees can use to control the fire hazards of contents and furnishings.     

The on-line texture analysis of steel strips

A new on-line texture-analyzing system and its application to nondestructive r value determination is discussed. In addition to providing a brief theoretical background and describing the instrumental set-up, the article presents off-line measurements with this equipment and demonstrates the high accuracy of the determined r-values. A special feature of the unit is the possibility to simultaneously measure the most important r values—r₀, r₄₅, r₉₀, and r_m.     

Rapid isothermal processing for fabrication of GaAs-basedelectronic devices [HBTs]

The use of rapid isothermal processing (RIP) is detailed for each of the three annealing steps in the fabrication of heterostructure-based devices such as heterojunction bipolar transistors (HBTs). RIP can be used for the alloying of ohmic metal contacts, annealing of ion-bombarded regions for device isolation or parasitic capacitance reduction, and for conventional implant activation annealing. High-speed (f_T=65 GHz) HBTs were achieved using RIP for all of the required heating steps. The authors compare the use of several types of silicon carbide-coated graphite susceptors for eliminating slip formation on 2- and 3-in-diameter GaAs wafers during high-temperature implant activation annealing     

Ordered dynamic channel assignment scheme with reassignment inhighway microcells

An ordered dynamic channel assignment with reassignment (ODCAR) scheme is proposed, and its performance is studied in a highway microcellular radio environment. Channels are assigned in an ordered basis in conjunction with a minimax algorithm under cochannel interference constraints, to provide high capacity and to alleviate worst case channel congestion in each microcell. Simulation results show significant performance improvements in terms of channel utilization and probability of call failure, at the expense of an increase in complexity and call switching requirements     

Recovery of monomers and fillers from high-temperature-vulcanized silicone rubbers—combined effects of solvent, base and fillers

The depolymerization of high-temperature-vulcanized (HTV) silicone rubbers containing filler silica and alumina into cyclosiloxane monomers and spontaneous recovery of fillers were studied. First, HTV silicone rubber was treated with different types of solvents in the presence of KOH to find that a triad mixture of diethylamine, methanol and hexane was appropriate not only to dissolve the silicone rubber to a suspension but also to separate fillers completely by filtration. The filtrate was distilled to remove solvent first and then give pure cyclosiloxane monomers in 76–84% yields. Second, the rubbers were treated with other types of triad mixture of solvents and bases, e.g. tetramethylammonium hydroxide, hexane and diethylamine. After filtration, residue was again treated with the amine and hexane to recover clean fillers in 83–93% yields. Cyclosiloxane monomers were also obtained from the combined filtrates in 67–78% yields.     

A light intensity function suitable for multimode fiber-opticsensors

Intensity distribution functions on the image plane are derived under the assumption that a multimode optic fiber is illuminated by a light source which can be approximated by infinite uniangular beams carrying equal power. The application of the theory to a Lambertian source is discussed. Experimental results, based on the observation of the light intensity distribution imaged on an opaque screen and collected by a digital camera, are presented. The theoretical and experimental data are compared to verify that the intensity function is an accurate model for describing the realistic approach to sensor design. The limitations of the uniangular and uniform intensity distribution models are discussed on the basis of theoretical and experimental results     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

Understanding creep—a review

A simple model based on the Orowan equation and the dynamic evolution of the dislocation structure by generation and merging of slipped areas is used to see which experimental results on creep of pure and solute-hardened crystalline materials can or cannot be explained with regard to creep with refinement or coarsening of the dislocation structure and steady-state creep. Quantitative deficiencies of the model for pure materials are discussed; most of them are related to neglection of subgrain formation. This article is based on a presentation made in the workshop entitled “Mechanisms of Elevated Temperature Plasticity and Fracture,” which was held June 27–29, 2001, in San Diego, CA, concurrent with the 2001 Joint Applied Mechanics and Materials Summer Conference. The workshop was sponsored by Basic Energy Sciences of the United States Department of Energy.