首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1419篇
  免费   14篇
电工技术   3篇
化学工业   101篇
金属工艺   18篇
机械仪表   6篇
建筑科学   26篇
矿业工程   1篇
能源动力   14篇
轻工业   58篇
水利工程   3篇
石油天然气   1篇
无线电   66篇
一般工业技术   93篇
冶金工业   974篇
原子能技术   3篇
自动化技术   66篇
  2021年   5篇
  2020年   9篇
  2019年   4篇
  2018年   6篇
  2017年   10篇
  2016年   8篇
  2014年   17篇
  2013年   22篇
  2012年   20篇
  2011年   20篇
  2010年   14篇
  2009年   16篇
  2008年   14篇
  2007年   19篇
  2006年   24篇
  2005年   31篇
  2004年   19篇
  2003年   21篇
  2002年   19篇
  2001年   11篇
  2000年   13篇
  1999年   32篇
  1998年   259篇
  1997年   129篇
  1996年   124篇
  1995年   86篇
  1994年   45篇
  1993年   57篇
  1992年   24篇
  1991年   25篇
  1990年   18篇
  1989年   30篇
  1988年   31篇
  1987年   19篇
  1986年   29篇
  1985年   21篇
  1984年   3篇
  1983年   8篇
  1982年   12篇
  1981年   9篇
  1980年   16篇
  1979年   3篇
  1978年   3篇
  1977年   33篇
  1976年   59篇
  1975年   7篇
  1972年   3篇
  1969年   3篇
  1968年   3篇
  1966年   3篇
排序方式: 共有1433条查询结果,搜索用时 15 毫秒
91.
92.
GaAs MESFETs with novel lowly-doped drain structures have been developed utilizing molecular implants of silicon trifluoride. Short-channel effects in the 1/4 μm enhancement- and depletion-mode transistors have been suppressed with drain-induced barrier height lowering of less than 70 mV/V and pinch-off voltage shifts of less than 220 mV as the gate length was scaled from 1.0 to 1/4 μm. The 3-terminal breakdown, the transconductance to output conductance ratio, and the unity current gain, cut-off frequency were simultaneously optimized. The E-mode device possessed breakdown of >10 V, Gm · Rds > 9.5, Ft > 55 GHz, and nominal on-resistance of 2.1 Ω mm while the D-mode device had breakdown >10 V, Gm · Rds > 6.0, Ft > 45 GHz, and nominal on-resistance of 1.9 Ω mm. These optimized transistors enabled the realization of a variety of low-power digital and high-power mixed signal circuits, using 3-level source-coupled transistor and common-mode logic, such as laser and electro-optic drivers, highly integrated transceivers, multiplexers, demultiplexers, and clock data recover circuits.  相似文献   
93.
94.
We have previously identified and mapped a locus within human chromosome 11p11.2-p12 that suppresses the tumorigenic potential of a rat liver tumor cell line (termed GN6TF) which contains well defined chromosomal aberrations involving rat chromosomes 1, 4, 7, and 10. In the present study, we investigated the potential of this human 11p11.2-p12 liver tumor suppressor locus to suppress the tumorigenic potential of two other rat liver tumor cell lines (GN3TG and GP10TA) following microcell-mediated introduction of human chromosome 11. These tumor cell lines are aneuploid and contain chromosomal abnormalities that are similar to the GN6TF tumor line. The tumorigenic potential and other phenotypic characteristics of GN3TG-11neo and GP10TA-11neo microcell hybrid (MCH) cell lines were variable, and dependent upon the status of the introduced human chromosome 11. MCH cell lines that retained the region of 11p11. 2-p12 delineated by microsatellite markers D11S1385 and D11S903 exhibited suppression of tumorigenicity in vivo (decrease in tumorigenicity and/or elongation of latency), whereas, the tumorigenic potential of one MCH line that lacked markers in this region of human 11p11.2-p12, but retained flanking markers, was not changed from that of the parental tumor cell line. The chromosomal interval between microsatellite markers D11S1385 and D11S903 encompasses the previously localized minimal liver tumor suppressor region, suggesting that a common locus is responsible for tumor suppression among the rat liver tumor cell lines examined. The results of the present study have verified the presence of a liver tumor suppressor locus within human 11p11.2-p12, and have identified a substantial number of microsatellite markers that are closely linked to this tumor suppressor region. These chromosomal markers will facilitate positional cloning of candidate genes from this region, and may prove useful for determining the involvement of this locus in the pathogenesis of human liver cancer.  相似文献   
95.
96.
A study of the 3-μm laser transitions in Ho:YAlO3 and Nd,Ho:YAlO3 using both flashlamp and laser pumping is discussed. Fluorescence measurements for the Nd,Ho:YAlO3 rod indicate that the neodymium is effective in quenching the lower holmium laser level and in sensitizing the upper level. Intracavity laser pumping of Ho:YAlO3 produced laser lines at 2.92 and 2.85 μm and demonstrated high efficiency  相似文献   
97.
98.
Sorption cryocoolers utilize metal hydride sorbent beds for the closed-cycle circulation of gaseous hydrogen through heat exchangers and a Joule-Thomson (J-T) expansion valve in order to achieve cold-stage temperatures below 30 K. These devices have high potential for satellite missions that require long term reliability, minimal vibrations, and low operating power. Designs for nominal 25 K liquid and 10 K solid hydrogen refrigerators are described. Prototype hydride sorbent beds for breadboard studies of sorption cryocoolers have been fabricated and tested to simulate expected operation. The sorbents contained in the beds are VHx, LaNi5−ySnyHx, and ZrNiHx. Some of these hydride beds have been integrated with a hydrogen J-T cold-stage. These experiments confirm that the selected metal hydrides and bed designs satisfy the constraints associated with the proposed liquid and solid hydrogen cryocoolers.  相似文献   
99.
Electrofusion joining is now an essential and widely used method to assist in the creation of polyethylene pressure pipe systems. The process of electrofusion joining is reviewed by examining the experimental and some computer simulation literature relating to the temperature and melt pressure changes during the fusion process, and on how varying fusion time and pipe/fitting gap influences the strength of electrofusion joints. From this literature review, four key stages in the joining process are identified. First, an incubation period where the joint has no strength. Second, a joint formation and consolidation stage where an increasing joint temperature aids molecular diffusion to both increase the joint strength and promote a more ductile mode of failure. A plateau region then follows where the joint strength, and ductility, remain reasonably constant despite the fusion time increasing. This plateau is thought to allow some welding variables, such as gap, to have only a small influence on joint strength (for gap maintained within reasonable limits). Finally there is a cooling stage where the joint bridging “tie molecules” become locked into either side of the joint. It is these tie molecules that give the joint its ductility and strength. The concluding section of the review notes some of the important on-site practices that, if followed, allow electrofusion joints to acquire their good strength properties, and hence give polyethylene pressure pipe systems of a high integrity.  相似文献   
100.
A retrospective analysis was conducted to evaluate whether studies from three geographically diverse locations have similar response profiles to the positive and negative controls in a standard 14‐day cumulative irritation study. The positive irritant control (0.1% sodium lauryl sulphate) and the negative control (0.9% sodium chloride, saline) data from seventeen 14‐day cumulative irritation studies were reviewed. The studies were compiled from three locations representing dry/hot, humid/hot, and dry/cold environments (Scottsdale, Arizona; St Petersburg, Florida; and Winnipeg, Manitoba, respectively). Irritation scores were generated by trained skin graders from a total of 442 subjects studied between 1999 and 2005. Cumulative irritation scores were reviewed and compared between study locations. The irritation scores for the positive and negative controls were not significantly different between locations. Temperature and relative humidity variation did not correlate significantly with overall irritation. However, the dryer climate (i.e. negative or low dew point) had a tendency to induce a higher overall irritation level for both positive and negative controls.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号