A 90-nm logic technology featuring strained-silicon

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach.     

Layout-Specific Circuit Evaluation in 3-D Integrated Circuits

In this paper, we describe a comprehensive layout methodology for bonded three-dimensional integrated circuits (3D ICs). In bonded 3D integration technology, parts of a circuit are fabricated on different wafers, and then, the wafers are bonded with a glue layer of Cu or polymer based adhesive. Using our layout methodology, designers can layout such 3D circuits with necessary information on inter-wafer via/contact and orientation of each wafer embedded in the layout. We have implemented the layout methodology in 3DMagic. Availability of 3DMagic has led to interesting research with a wide range of layout-specific circuit evaluation, from performance comparison of 2D and 3D circuits to layout-specific reliability analyses in 3D circuits. Using 3DMagic, researchers have designed and simulated an 8-bit encryption processor mapped into 2D and 3D FPGA layouts. Moreover, the layout methodology is an essential element of our ongoing research for the framework of a novel Reliability Computer Aided Design tool, ERNI-3D.     

Chromatic dispersion and bandshape improvement of SOI flatband AWG multi/demultiplexers by phase-error correction

By measuring the phase and amplitude distribution of the optical paths in a flatband arrayed waveguide grating, the array mask was redesigned to correct for the slow varying phase errors within the array waveguides, leading to a reduction in both the chromatic dispersion across the passband of the device and in the transmission band tilt.     

基于可调谐光纤环形镜滤波器的多波长布里渊掺铒光纤激光器

通过使用非线性放大的光纤环形 镜滤波器(AFLMF),构造了一种新颖的多波长布里渊掺铒光纤激光器(E DFL)线形结构。非线性AFLMF由掺铒光纤放大器(EDFA,由980n m泵浦抽运 一段EDF构成)、偏振控制器(PC)和耦合器构成,减少了腔内基于波长的损耗,并且能够灵 活地控制反射 光以及激光腔内输入和输出光的强度。在布里渊泵浦功率为25mW、 980nm泵浦功率为200mW时,获得了波 长间隔为0.08nm的14个波长的激光输出以及50nm的可调谐范围。通过调节980nm抽运光功率、PC以及布里渊泵浦光波长,实现了可调谐的多波长输出。研究 了980nm抽运光功率以及PC对斯托克斯光波数的影响。     

Protecting local access telecommunications networks: Toward a minimum-cost solution

The problem of designing fibre-optic networks for local-access telecommunications generates (at least) three non-trivial subproblems. In the first of these subproblems one must determine how many fibre-optic cables (fibres) are required at either end of a street. In the next subproblem a minimum-cost network must be designed to support the fibres. The network must also provide distinct paths from either end of the street to the central exchange(s). Finally, the fibre-optic cables must be placed in protective covers. These covers are available in a number of different sizes, allowing some flexibility when covering each section of the network. In this paper we describe a dynamic programming (DP) formulation for finding a minimum-cost (protective) covering for the network (the third of the subproblems). This problem is a generalised set covering problem with side constraints and is further complicated by the introduction of fixed and variable welding costs. The DP formulation selects covers along each arc (in the network), but cannot exactly model the fixed costs and so does not guarantee optimality. We also describe an integer programming (IP) formulation for assessing the quality of the DP solutions. The cost of the networks constructed by the IP model is less than those designed using the DP model, but the saving is not significant for the problems examined (less than 0.1%). This indicates that the DP model will generally give very good solutions. Furthermore, as the problem dimensions grow, DP gives significantly better solution times than IP.     

Si/SiGe resonant interband tunnel diode with f/sub r0/ 20.2 GHz and peak current density 218 kA/cm/sup 2/ for K-band mixed-signal applications

This letter presents the room-temperature high-frequency operation of Si/SiGe-based resonant interband tunnel diodes that were fabricated by low-temperature molecular beam epitaxy. The resulting devices show a resistive cutoff frequency f/sub r0/ of 20.2 GHz with a peak current density of 218 kA/cm/sup 2/, a speed index of 35.9 mV/ps, and a peak-to-valley current ratio of 1.47. A specific contact resistivity of 5.3/spl times/10/sup -7/ /spl Omega//spl middot/cm/sup 2/ extracted from RF measurements was achieved by Ni silicidation through a P /spl delta/-doped quantum well by rapid thermal sintering at 430/spl deg/C for 30 s. The resulting devices are very good candidates for RF high-power mixed-signal applications. The device structures presented here are compatible with a standard complementary metal-oxide-semiconductor or heterojunction bipolar transistor process.     

高铁摩擦片表面裂纹检测方法研究

摩擦片的裂纹数目和长度是衡量高铁制动性能的核心评定标准之一,有效的裂纹检测对高铁的安全运行具有重要意义.提出基于CSPDarkNet53主干网络架构的改进算法,实现摩擦片裂纹的在线自动检测.一方面融合双路特征提取网络以增强对于裂纹特征检测的敏感度,有效提高摩擦片裂纹检测的准确率;另一方面在YOLO检测模块预测框的去冗余...     

The static and dynamic characteristics of single and multiplephase-shifted DFB laser structures

The influence of longitudinal mode spatial hole burning (LMSHB) on the performance of distributed feedback (DFB) laser structures is examined in detail. A comprehensive model has been used to interpret the experimental results and to construct a theoretical framework that was utilized to develop more advanced device designs. An increasing side mode intensity with output power, movement of the lasing mode relative to the stopband, and curvature of the light-current characteristic at low power can all be manifestations of the influence of LMSHB on the static device performance. The dynamic behavior can also be affected, with extended wavelength chirp and amplitude patterning effects on the timescale of the effective carrier recombination time being particularly important     

Excited-state-absorption cross sections and amplifier modeling inthe 1300-nm region for Nd-doped glasses

The performance of Nd³⁺-doped fibre amplifiers is limited by strong excited-state absorption (ESA) of the signal, and, even for fluorozirconate glasses, ESA prevents the important region below 1320 nm from being used. To quantify this limitation and explore alternative host materials, ESA and stimulated-emission cross sections have been measured for a representative group of glass compositions. These parameters have been used in an accurate fiber-amplifier model to provide the first quantitative comparisons of performance for Nd³⁺ -doped glasses in the 1300-nm band as a function of host     

The INTELSAT VII/VIIA generation of global communications satellites

Developed primarily to provide continuation of services from the INTELSAT V satellites in the Pacific Ocean Region, this latest generation of satellites also has utility for operation in other roles. Several new technologies are combined to give cost-effective international satellite communications on a global, regional and domestic basis. This new higher power satellite will form a fundamental part of the INTELSAT global network, having been designed to match the projected traffic demands and future service requirements.