Wide-band symmetrical analog multiplier IC for coherentoptical-fiber receivers operating up to 10 Gb/s

A versatile analog four-quadrant multiplier IC with large bandwidth (DC to 6 GHz and 10 Gb/s) and large dynamic range is presented. It was mainly developed for differential-phase-shift-keying (DPSK) phase demodulator and polarization diversity receivers in coherent optical-fiber transmission systems. The circuit consumes 450 mW and only needs a single power supply of -5 V. The circuit principle used allows exact symmetry with respect to both linear inputs, which reduced multiplication errors. In the intended application, especially, the time jitter and the offset voltage of the output pulse patterns are reduced to negligible values. The IC was realized in a 1.25-μm double-polysilicon bipolar technology     

Silica-based circular cross-sectioned channel waveguides

A technique for fabricating silica channel waveguides with circular cross sections is presented. The geometrical mismatch between a square or rectangular waveguide and a regular optical fiber is therefore largely reduced. The fiber-waveguide-fiber coupling loss drops from 1.8 dB to 0.5 dB or less for step index multimode waveguides by applying this technique. The heat treatment applied in the waveguide rounding process also smooths the waveguide sidewalls and results in much lower propagation loss in the waveguides. Uniform Y splitters were fabricated to show the feasibility of using this technique to make integrated optical devices.<>     

Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 Ω cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised deposition parameters resulted in outstandingly low surface recombination velocities (SRVs) below 10 cm/s. Interestingly, we find the lowest SRVs for stoichiometric SiN films, as indicated by a refractive index of 1.9. In former studies similarly low SRVs had only been obtained for silicon-rich SiN films. The fundamentally different passivation behaviour of our SiN films is attributed to the addition of nitrogen to the process gases.     

Germany's solar cell promotion: Dark clouds on the horizon

This article demonstrates that the large feed-in tariffs currently guaranteed for solar electricity in Germany constitute a subsidization regime that threatens to reach a level comparable to that of German hard coal production, a notoriously outstanding example of misguided political intervention. Yet, as a consequence of the coexistence of the German Renewable Energy Sources Act (EEG) and the EU Emissions Trading Scheme (ETS), the increased use of renewable energy technologies does not imply any additional emission reductions beyond those already achieved by ETS alone. Similarly disappointing is the net employment balance, which is likely to be negative if one takes into account the opportunity cost of this form of solar photovoltaic (PV) support. Along the lines of the international energy agency [IEA, 2007. Energy policies of IEA countries: Germany, 2007 review. International Energy Agency, OECD, Paris, p. 77], we recommend the immediate and drastic reduction of the magnitude of the feed-in tariffs granted for solar-based electricity. Ultimately, producing electricity on this basis is among the most expensive greenhouse gas abatement options.     

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 10⁹ cm^?2 to 1 × 10¹³ cm^?2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 10¹⁰ cm^?2. Remarkable changes in device characteristics were seen at a fluence of 1 × 10¹² cm^?2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 10¹² cm^?2. The results found on devices and on the GaN layer were compared and correlated.     

Implementation of electron beam grey scale lithography and proximity effect correction for silicon nanowire device fabrication

An electron beam lithography exposure strategy combining efficient proximity effect correction (PEC) with multi-pass grey scale is compared with a more conventional strategy based on a single-pass exposure without PEC. Exposure results for different types of nanowire structures are presented. Line edge and line width roughness (LER and LWR) values for both approaches are determined. The novel exposure strategy presented in this work reduced LER by ∼25% and LWR by ∼40%.     

One‐Step Formulation of Protein Microparticles with Tailored Properties: Hard Templating at Soft Conditions

Formulation of therapeutic proteins into particulate forms is a main strategy for site‐specific and prolonged protein delivery as well as for protection against degradation. Precise control over protein particle size, dispersity, purity, as well as mild preparation conditions and minimal processing steps are highly desirable. It is, however, hard to fit all these criteria with conventional preparation techniques. Here a one‐step hard‐templating synthesis of microparticles composed of functional, non‐denatured protein is reported. The method is based on filling porous CaCO₃ microtemplates with the protein near to its isoelectric point (pI) followed by pH‐ or EDTA‐mediated dissolution of the tempplates. In principle, a wide variety of proteins can be converted into microparticles using this approach. The main requirement is an overlap of the protein insolubility and a template solubility for a certain parameter (here pH or EDTA). Here the formulation of insulin particles is studied in detail and it is shown that particles consisting of high molecular weight protein (catalase) can also be prepared. In this context, the synthesis of CaCO₃ templates with controlled size, the mechanism of the protein microparticle formation and mechanical properties of the microparticles are discussed. For the first time, the fabrication of mesoporous monodispersed CaCO₃ microtemplates with identical porocity but tuned diameter from 3 to 20 μm is demonstrated. The protein particle diameter can be adjusted by choosing the appropriate template size that is critical for successful pulmonary delivery of insulin. As a first step towards insulin delivery, the in vitro release of insulin at physiological conditions is studied.     

Multicomponent Physical Vapor Deposited Films with Homogeneous Molecular Material Distribution Featuring Improved Resist Sensitivity

Each film preparation technique affects the physical properties of the resulting coating and thus defines its applicability in modern device construction. In this context solvent based spin coated and solvent‐free physical vapor deposited molecular glass photoresist films are systematically investigated for their dissolution behavior, sensitivity, and overall lithographic performance. These investigations demonstrate that the solvent‐free physical vapor deposition leads to a marked increase in sensitivity. This could be explained by the individual molecule by molecule deposition step producing a more homogeneous distribution of the multicomponent resist system, especially the photoacid generator. In addition, this assumption is supported by former published simulations focusing on aggregate formation within thin films. This work demonstrates that the lithographic sensitivity of multicomponent resist system is an intrinsic parameter to investigate molecular material distribution and indicates that the applied film preparation technique is crucial for the corresponding performance and applicability.     

Room-Temperature Mechanical Properties and Slow Crack Growth Behavior of Mg2Si Thermoelectric Materials

Mg₂Si is of interest as a thermoelectric (TE) material in part due to its low materials cost, lack of toxic components, and low mass density. However, harvesting of waste heat subjects TE materials to a range of mechanical and thermal stresses. To understand and model the material??s response to such stresses, the mechanical properties of the TE material must be known. The Mg₂Si specimens included in this study were powder processed and then sintered via pulsed electrical current sintering. The elastic moduli (Young??s modulus, shear modulus, and Poisson??s ratio) were measured using resonant ultrasound spectroscopy, while the hardness and fracture toughness were examined using Vickers indentation. Also, the Vickers indentation crack lengths were measured as a function of time in room air to determine the susceptibility of Mg₂Si to slow crack growth.     

Efficient silicon heterojunction solar cells based on p‐ and n‐type substrates processed at temperatures < 220°C

We present the optimization and characterization of heterojunction solar cells consisting of an amorphous silicon emitter, a single crystalline absorber and an amorphous silicon rear side which causes the formation of a back surface field (a‐Si:H/c‐Si/a‐Si:H). The solar cells were processed at temperatures <220°C. An optimum of the gas phase doping concentration of the a‐Si:H layers was found. For high gas phase doping concentrations, recombination via defects located at or nearby the interface leads to a decrease in solar cell efficiency. We achieved efficiencies >17% on p‐type c‐Si absorbers and >17·5% on n‐type absorbers. In contrast to the approach of Sanyo, no additional intrinsic a‐Si:H layers between the substrate and the doped a‐Si:H layers were inserted. Copyright © 2006 John Wiley & Sons, Ltd.