Broad-band single-patch circularly polarized microstrip antennawith dual capacitively coupled feeds

New design of a circular microstrip antenna with dual capacitively coupled feeds for broad-band circular polarization radiation is presented. The dual feeds are with a small top-loaded disk and are connected to a Wilkinson power divider with a 90° phase shift between its two output feedlines. The radiating circular patch, printed on a thin substrate, is supported by nonconducting posts on a conducting ground plane and is excited capacitively through the dual feeds. With a distance less than 10% times the center operating wavelength between the circular patch and the ground plane, the present proposed antenna can provide an impedance bandwidth (VSWR ⩽2) of about 49% and a 3-dB axial-ratio bandwidth of about 35%. The antenna gain bandwidth, defined to be within 1-dB gain variation in the axial-ratio bandwidth, is as large as 28%, with the antenna gain level at about 7.0 dBi     

GaN MSM UV photodetectors with titanium tungsten transparent electrodes

GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with titanium tungsten (TiW) transparent electrodes were fabricated and characterized. It was found that the 10-nm-thick TiW film deposited with a 300-W RF power can still provide a reasonably high transmittance of 75.1% at 300 nm, a low resistivity of 1.7/spl times/10/sup -3/ /spl Omega//spl middot/cm and an effective Schottky barrier height of 0.773 eV on u-GaN. We also achieved a peak responsivity of 0.192 A/W and a quantum efficiency of 66.4% from the GaN ultraviolet MSM photodetector with TiW electrodes. With a 3-V applied bias, it was found that minimum noise equivalent power and maximum D/sup */ of our detector were 1.987/spl times/10/sup -10/ W and 6.365/spl times/10/sup 9/ cmHz/sup 0.5/W/sup -1/, respectively.     

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO<Subscript>2</Subscript> gate oxide

High-quality SiO₂ was successfully deposited onto GaN by photo-chemicalvapor deposition (photo-CVD) using a D₂ lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-μm gate, it was found that the saturated I_ds, maximum g_m, and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.     

AlGaN Photodetectors Prepared on Si Substrates

AlGaN ultraviolet (UV) metal-semiconductor-metal (MSM) photodetectors (PDs) grown on silicon substrates were fabricated and characterized. With 5-V applied bias, it was found that dark current density of Al_0.2Ga_0.7N PDs on silicon substrate was only 7.5times10^-9 A/cm². With an applied bias of 7 V, it was found that peak responsivities were 0.09 and 0.11 A/W while UV/visible rejection ratios (i.e., peak wavelength: 420 nm) were 324 and 278 for Al_0.2Ga_0.8N and Al_0.3 Ga_0.7N MSM PDs, respectively. Moreover, the noise equivalent power of Al_0.2Ga_0.8N MSM PDs was estimated to be 3.5times10^-12 W     

Concurrent Error Detection in a Bit-Parallel Systolic Multiplier for Dual Basis of GF(2<Superscript><Emphasis Type="Italic">m</Emphasis></Superscript>)

The finite field is widely used in error-correcting codes and cryptography. Among its important arithmetic operations, multiplication is identified as the most important and complicated. Therefore, a multiplier with concurrent error detection ability is elegantly needed. In this paper, a concurrent error detection scheme is presented for bit-parallel systolic dual basis multiplier over GF(2^m) according to the Fenn’s multiplier in [7]. Although, the proposed method increases the space complexity overhead about 27% and the latency overhead about one extra clock cycle as compared to Fenn’s multiplier. Our analysis shows that all single stuck-at faults can be detected concurrently.     

Cross-Validation Estimation for Frequency-Dependent I/Q Imbalance in MIMO-OFDM Receivers

The effects of variation in RF, such as I/Q imbalance and filter mismatch, are extremely important for OFDM wireless accesses. This work presents a low-computational estimation of I/Q imbalances with filter mismatches to improve performance in MIMO-OFDM receivers. For N × N MIMO-OFDM systems, the proposed cross-validation estimation is such that, only N + 1 preambles are required to extract the mismatches of filters, gains and phases. With the estimated parameters, frequency-domain filters are exploited to correct frequency-dependent I/Q imbalances. Through performance evaluation of a 2 × 2 MIMO-OFDM system, with ideal channel estimations this study incurs a SNR loss of 1–1.2 dB to maintain a 10% PER at 1-dB gain error, 10°-phase error and the worst 180°-filter mismatch. In addition, this algorithm is well-matched to IEEE 802.11n and new specifications discussed in IEEE 802.11 VHT study group.     

Angular‐Shaped 4,9‐Dialkyl α‐ and β‐Naphthodithiophene‐Based Donor–Acceptor Copolymers: Investigation of Isomeric Structural Effects on Molecular Properties and Performance of Field‐Effect Transistors and Photovoltaics

Two angular‐shaped 4,9‐didodecyl α‐aNDT and 4,9‐didodecyl β‐aNDT isomeric structures have been regiospecifically designed and synthesized. The distannylated α‐aNDT and β‐aNDT monomers are copolymerized with the Br‐DTNT monomer by the Stille coupling to furnish two isomeric copolymers, PαNDTDTNT and PβNDTDTNT, respectively. The geometric shape and coplanarity of the isomeric α‐aNDT and β‐aNDT segments in the polymers play a decisive role in determining their macroscopic device performance. Theoretical calculations show that PαNDTDTNT possesses more linear polymeric backbone and higher coplanarity than PβNDTDTNT. The less curved conjugated main chain facilitates stronger intermolecular π–π interactions, resulting in more redshifted absorption spectra of PαNDTDTNT in both solution and thin film compared to the PβNDTDTNT counterpart. 2D wide‐angle X‐ray diffraction analysis reveals that PαNDTDTNT has more ordered π‐stacking and lamellar stacking than PβNDTDTNT as a result of the lesser curvature of the PαNDTDTNT backbone. Consistently, PαNDTDTNT exhibits a greater field effect transistor hole mobility of 0.214 cm² V^?1 s^?1 than PβNDTDTNT with a mobility of 0.038 cm² V^?1 s^?1. More significantly, the solar cell device incorporating the PαNDTDTNT:PC₇₁BM blend delivers a superior power conversion efficiency (PCE) of 8.01% that outperforms the PβNDTDTNT:PC₇₁BM‐based device with a moderate PCE of 3.6%.     

Low-complexity finite field multiplier using irreducible trinomials

A low-complexity array multiplier for GF(2/sup m/) fields with an irreducible trinomial X/sup m/+X/sup n/+1 is presented. The space complexity of the proposed multiplier is reduced from order O(m/sup 2/) to O(m) compared with the Lee's array multiplier. The time complexity of the proposed multiplier is about half that of Lee's array multiplier.     

A floating well method for exact capacitance-voltage measurement of nano technology

Small gate area with short gate length reduces the C-V distortion of ultrathin oxide devices, but results in high parasitic capacitance/total capacitance ratio. The floating well method can exclude the parasitic capacitance to obtain accurate inversion oxide thickness without using any dummy pattern. It is suitable for nano technology.     

Concurrent Error Detection in a Polynomial Basis Multiplier over GF(2 m )

Eliminating cryptographic computation errors is vital for preventing attacks. A simple approach is to verify the correctness of the cipher before outputting it. The multiplication is the most significant arithmetic operation among the cryptographic computations. Hence, a multiplier with concurrent error detection ability is urgently necessary to avert attacks. Employing the re-computing shifted operand concept, this study presents a semi-systolic array polynomial basis multiplier with concurrent error detection with minimal area overhead. Moreover, the proposed multiplier requires only two extra clock cycles while traditional multipliers using XOR trees consume at least extra XOR gate delays in GF(2^m) fields. Chiou-Yng Lee received the Bachelor’s degree (1986) in medical engineering and the M.S. degree in electronic engineering (1992), both from the Chung Yuan university, Taiwan, and the Ph.D. degree in electrical engineering from Chang Gung University, Taiwan, in 2001. From 1988 to now, he was a research associate with Chunghwa Telecommunication Laboratory in Taiwan. He joined the department of project planning. He taught those related field courses at Ching-Yun Technology University. He is currently as an assistant professor of Department of Computer Information and Network Engineering in Lunghwa University of Science and Technology. His research interests include computations in finite fields, error-control coding, signal processing, and digital transmission system. Besides, he is a member of the IEEE and the IEEE Computer society. He is also an honor member of Phi Tao Phi in 2001. Che Wun Chiou received his B.S. degree in Electronic Engineering from Chung Yuan Christian University in 1982, the M.S. degree and the Ph.D. degree in Electrical Engineering from National Cheng Kung University in 1984 and 1989, respectively. From 1990 to 2000, he was with the Chung Shan Institute of Science and Technology in Taiwan. He joined the Department of Electronic Engineering and the Department of Computer Science and Information Engineering, Ching Yun University in 2000 and 2005, respectively. He is currently as Dean of Division of Continuing Education in Ching Yun University. His current research interests include fault-tolerant computing, computer arithmetic, parallel processing, and cryptography. Jim-Min Lin was born on March 5, 1963 in Taipei, Taiwan. He received the B.S. degree in Engineering Science and the M.S. and the Ph.D. degrees in Electrical Engineering, all from National Cheng Kung University, Tainan, Taiwan, in 1985, 1987, and 1992, respectively. Since February 1993, he has been an Associate Professor at the Department of Information Engineering and Computer Science, Feng Chia University, Taichung City, Taiwan. He is currently as Professor at the Department of Information Engineering and Computer Science, Feng Chia University. His research interests include Operating Systems, Software Integration/Reuse, Embedded Systems, Software Agent Technology, and Testable Design.