首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   24104篇
  免费   489篇
  国内免费   736篇
电工技术   454篇
综合类   48篇
化学工业   2623篇
金属工艺   2264篇
机械仪表   966篇
建筑科学   522篇
矿业工程   46篇
能源动力   875篇
轻工业   1180篇
水利工程   155篇
石油天然气   368篇
武器工业   5篇
无线电   2800篇
一般工业技术   6766篇
冶金工业   4119篇
原子能技术   315篇
自动化技术   1823篇
  2023年   51篇
  2022年   122篇
  2021年   192篇
  2020年   141篇
  2019年   253篇
  2018年   418篇
  2017年   398篇
  2016年   462篇
  2015年   360篇
  2014年   575篇
  2013年   1561篇
  2012年   919篇
  2011年   1413篇
  2010年   1100篇
  2009年   1295篇
  2008年   1315篇
  2007年   1314篇
  2006年   1155篇
  2005年   1048篇
  2004年   885篇
  2003年   812篇
  2002年   771篇
  2001年   749篇
  2000年   720篇
  1999年   761篇
  1998年   1553篇
  1997年   1094篇
  1996年   939篇
  1995年   582篇
  1994年   472篇
  1993年   389篇
  1992年   244篇
  1991年   254篇
  1990年   167篇
  1989年   174篇
  1988年   133篇
  1987年   92篇
  1986年   62篇
  1985年   64篇
  1984年   39篇
  1983年   33篇
  1982年   32篇
  1981年   30篇
  1980年   21篇
  1979年   17篇
  1978年   12篇
  1977年   15篇
  1976年   30篇
  1975年   16篇
  1973年   16篇
排序方式: 共有10000条查询结果,搜索用时 46 毫秒
31.
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.  相似文献   
32.
33.
Nanocrystalline Gd2O3:A (A=Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol–gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 °C and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 μm). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 °C, and the optimum concentrations for Eu3+, Dy3+, Sm3+, Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively.  相似文献   
34.
Small Ag particles or clusters dispersed mesoporous SiO2 composite films were prepared by a new method: First the matrix SiO2 films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO3 solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO2 films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements.  相似文献   
35.
The electronic properties, carrier injection, and transport into poly(9,9‐dioctylfluorene) (PFO), PFO end‐capped with hole‐transporting moieties (HTM), PFO–HTM, and PFO end‐capped with electron‐transporting moieties (ETM), PFO–ETM, were investigated. The data demonstrate that charge injection and transport can be tuned by end‐capping with HTM and ETM, without significantly altering the electronic properties of the conjugated backbone. End‐capping with ETM resulted in more closely balanced charge injection and transport. Single‐layer electrophosphorescent light‐emitting diodes (LEDs), fabricated from PFO, PFO–HTM and PFO–ETM as hosts and tris[2,5‐bis‐2′‐(9′,9′‐dihexylfluorene)pyridine‐κ2NC3′]iridium(III ), Ir(HFP)3 as the guest, emitted red light with brightnesses of 2040 cd m–2, 1940 cd m–2 and 2490 cd m–2 at 290 mA cm–2 (16 V) and with luminance efficiencies of 1.4 cd A–1, 1.4 cd A–1 and 1.8 cd A–1 at 4.5 mA cm–2 for PFO, PFO–HTM, and PFO–ETM, respectively.  相似文献   
36.
A new method has been developed for compressing the matrices that occur in most integral-equation-based computer programs. This method is easy to interface with existing computer programs, and allows them to run significantly faster and with significantly less memory. This method applies not only to electromagnetic and acoustic computation, but also to most programs involving a Green's function or any integral equation with a kernel having some smoothness properties. Our numerical computations, running on a high-end personal computer, have achieved compression ratios of fifty times, and compressed inversion of the matrices fifty times faster than by previous methods. For larger problems, solved on high-performance computers, these ratios would improve to about one thousand to one for larger moment method problems.  相似文献   
37.
Towards intelligent dressing   总被引:1,自引:0,他引:1  
The aim of this article is to state the principles of an intelligent monitoring and control system for the grinding machine, comprising the dressing process as well as grinding stability.  相似文献   
38.
 An efficient finite element model is presented for the static and dynamic piezothermoelastic analysis and control of FGM plates under temperature gradient environments using integrated piezoelectric sensor/actuator layers. The properties of an FGM plate are functionally graded in the thickness direction according to a volume fraction power law distribution. A constant displacement-cum-velocity feedback control algorithm that couples the direct and inverse piezoelectric effects is applied to provide active feedback control of the integrated FGM plate in a closed loop system. Numerical results for the static and dynamic control are presented for the FGM plate, which consists of zirconia and aluminum. The effects of the constituent volume fractions and the influence of feedback control gain on the static and dynamic responses of the FGM plates are examined. Received: 13 March 2002 / Accepted: 5 March 2003 The work described in this paper was supported by a grant awarded by the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. CityU 1024/01E).  相似文献   
39.
40.
Multifilament Ag-sheathed BiPbSrCaCuO (2223) superconducting tapes containing 49 filaments were fabricated by the powder-in-tube route and the roll-anneal process. The transport critical current densityJ c was 1.3×104 A cm–2 at 77 K and 7×104 A cm–2 at 4.2 K in self-field. A 12-m-long tape was used to construct superconducting solenoids (50, 28, and 14 mm internal diameters) generating dc fields 380–1070 G at 4.2 K. Measurements of the variation ofJ c with field (0–1.6 T) and bend strain (0–5%) are used to explain the performance of the solenoids. The critical bend strain of tapes was about 1.5%.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号