Erbium and Germanium Profiles in Si1 – xGe x Layers Grown by Silicon Sublimation-Source Molecular-Beam Epitaxy in GeH4

The Ge and Er depth profiles in Si_{1 – x} Ge _x layers grown on Si(100) substrates by Si sublimation-source molecular-beam epitaxy in GeH₄ were studied by secondary ion mass spectrometry. The results demonstrate that Ge facilitates Er incorporation into the growing Si–Ge layer. The Er dopant profile becomes sharper with increasing Ge content. The Ge profile also has rather sharp boundaries, indicating that there is no Ge surface segregation, which is attributable to the presence of adsorbed hydrogen, acting as a surfactant.     

Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

The effect of the growth temperature on the density, lateral size, and height of InAs-GaAs quantum dots (QD) has been studied by transmission electron microscopy. With the growth temperature increasing from 450 to 520°C, the density and height of QDs decrease, whereas their lateral size increases; i.e., the QDs are flattened. The blue shift of the photoluminescence line indicates decreasing QD volume. The observed behavior is in agreement with the thermodynamic model of QD formation. The effect of lowering the substrate temperature immediately after the formation of QDs on the QD parameters has been studied. On lowering the temperature, the lateral size of QDs decreases and their density increases; i.e., the parameters of QD arrays tend to acquire the equilibrium parameters corresponding at the temperature to which the cooling is done. The QD height rapidly increases with cooling and may exceed the equilibrium value for a finite time of cooling, which enables fabrication of QD arrays with a prescribed ratio between height and lateral size by choosing the time of cooling.     

Calculation of the statistical characteristics of a turbulent flow under the action of external forces

A study is made of the statistical characteristics of isotropic velocity and scalar fields in supply of the kinetic energy of turbulence from the energy of the average flow. Two models based on the distributions of the kinetic turbulence energy and the intensity of scalar-field pulsations by wave numbers and length scales are used for calculation of the statistical characteristics of turbulent velocity and scalar fields. The calculation results are compared to the data of the direct numerical modeling performed under the same initial conditions. __________ Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 79, No. 1, pp. 148–154, January–February, 2006.     

Reaction Between Strontium-Doped Lanthanum Cuprate and Yittria-Stabilized Zirconia

Sr-doped lanthanum cuprate was recently investigated as a potential cathode material for the intermediate temperature solid oxide fuel cell using yittria-stabilized zirconia as an electrolyte. The material thermal stability of cathode material against an electrolyte at an operating temperature plays an important role in the fuel cell's performance. In this study, the structural stability between Sr-doped lanthanum cuprate and 8 mol% yittria-stabilized zirconia was investigated by using the powder mixture and diffusion couple. The chemical reaction between these two materials in the temperature ranging from 800° to 1000°C was examined by X-ray diffraction analyses. The interfacial reaction behavior between electrode and electrolyte pellets of the reaction couple was examined by a grazing X-ray diffractometer, wavelength-dispersive X-ray analysis, and an electron probe microanalyzer. No reaction products were observed as these two materials co-fired at 800°C. The reaction products of pyrochlore La₂Zr₂O₇ and perovskite SrZrO₃ were formed when the specimens were heat treated at over 900°C. Because of the formation of these reaction products, the CuO was precipitated. Furthermore, an excess of SrZrO₃ formation leads to the phase decomposition of perovskite Sr-doped lanthanum cuprate to La_{2− x} Sr _x CuO₄ and CuO due to a decrease in strontium concentration in Sr-doped lanthanum cuprate.     

Mixture of probability distributions as a basic component in simulating measurement accuracy

A stochastic model is proposed for a basic mechanism in the formation of uncertainties in physical quantity measurements. __________ Translated from Izmeritel'naya Tekhnika, No. 1, pp. 12–17, January, 2006.     

Essential shortcomings of Tafel equations in describing electrochemical dissolution kinetics of a solid electrode

A simplified topokinetic dissolution model of a solid taking into account the correlation between the dissolution rate and the atomic surface topography enables one to interpret a linear (in semilogarithmic coordinates) segment of the steady-state curves of the active anodic dissolution of metals. Its slope corresponds to the product of a concentration of kinks and the elementary reaction rate, both of which exponentially depend on the potential, rather than a simple (Tafel) elementary rate of the atom dissolution at a semi-crystal kink. Original Russian Text ? Yu.V. Alekseev, G.Yu. Alekseev, V.A. Bityurin, A.V. Plaskeev, 2006, published in Zashchita Metallov, 2006, Vol. 42, No. 6, pp. 568–573.     

Tagging of η mesons using the pd → 3Heη reaction near threshold

A zero-degree spectrometer for tagging η mesons on the CELSIUS/WASA facility is described, and its characteristics are presented. Tagging of η mesons is performed by detecting ³He ions produced by reaction pd → ³Heη close to the production threshold. The low background level (<2%) is in good agreement with the data obtained earlier on the SATURNE accelerator.     

Measurement of forming trajectories during drilling

Results are provided for an experimental study of forming trajectories during drilling and the effect on them of cutting speed and drilling depth. __________ Translated from Izmeritel’naya Tekhnika, No. 8, pp. 31–33, August, 2006.     

Studying grain-boundary stresses in copper by the molecular-statics method

Grain-boundary stresses in copper for 60 symmetrical tilt grain boundaries with different orientations of the grain-boundary plane and tilt axis have been calculated by the molecular-statics method with the use of embedded-atom-method potentials of interatomic interaction. It has been established that the grain-boundary stresses are negative for grain boundaries with small excess volumes and increase approximately linearly with a buildup of the excess volume. It has been shown that the increase in grain-boundary stresses is connected with a decrease in the average coordination number of atoms, whereas pairs of closely spaced atoms in the grain-boundary core cause a negative contribution to grain-boundary stresses.     

可控硅控制模块在直流系统的应用

本文简要介绍了可控硅控制模块原理,通过实例介绍了可控硅模块在直流系统中的应用。