Role of Milk Fat Globule Membrane in Autoxidation of Milk Fat

The influence of the milk fat globule membrane (MFGM) on oxidation of milk fat under various conditions was monitored by fatty acid analysis and oxygen consumption at 50°C. The rate of copper-catalyzed oxidation of cream containing the membrane was faster than when the membrane was removed. In the dry state, the isolated MFGM, membrane lipids (ML) and the nonlipid membrane solids (NLMS) inhibited oxidation at 50°C and 95°C. In the presence of water, however, all membrane components enhanced oxidation at 50°C. The balance between the accelerating effects of membrane components and the inhibiting influence of other factors appeared to depend on processing conditions.     

Two-level optimal output feedback stabilizer design

Design of two-level system stabilizers is considered using an optimal reduced-order model whose state variables are torque angles and speeds. The reduced-order model retains their physical meaning and is used to design a two-level linear feedback controller that takes into account the realities and constraints of the electrical power systems. The two-level control strategy is used, and a global control signal is generated from the output variables to minimize the effect of interaction. The effectiveness of this controller is evaluated, and an example, the multimachine system, is given to illustrate the advantages of the proposed method. The responses of the system with the two-level scheme and optimal reduced order scheme are included for comparative analyses     

2.488 Gb/s-318 km repeaterless transmission using erbium-dopedfiber amplifiers in a direct-detection system

The authors have achieved a 2.488 Gb/s, 318 km repeaterless transmission without any fiber dispersion penalty through a nondispersion-shifted fiber in a direct detection system. The system was loss limited with a T-R power budget of 57 dB. Three key components enabled the authors to achieve this result: (1) a Ti:LiNbO₃ external amplitude modulator enabling a dispersion-free transmission, (2) erbium-doped fiber amplifiers increasing the transmitting power to +16 dBm, and (3) an erbium-doped fiber preamplifier enabling a high-receiver sensitivity of -4.1 dBm for 10^-9 BER. To the author's knowledge, this result is the longest repeaterless transmission span length ever reported for direct detection at this bit rate. From the experimental results and a theoretical model, the authors identified the sources of the receiver sensitivity degradation from the quantum limit (-48.6 dBm) and estimated the practically achievable receiver sensitivity of ~-44 dBm (~-124 photons/bit) for 2.5 Gb/s optical preamplifier detection     

Indexed in current contents

Indexed in current contents     

Lateral-mode analysis of narrow-stripe semiconductor lasers with acylindrically concave end facet

A beam-propagation method is used to investigate numerically the lateral-mode characteristics of GaAlAs semiconductor lasers having a cylindrically concave facet at one end. Various degrees of index guiding have been considered. Simulations were made for both below- and above-threshold regimes. As expected, the numerical results show that the optical beam divergence parallel to the junction plane can be significantly reduced. In addition, this far-field narrowing is accompanied by lower threshold currents. However, for values of the radius of curvature of the concave facet lying in some specific ranges, the losses of the fundamental lateral mode are higher than that calculated for conventional lasers, and the corresponding eigenvalue shows nonmonotonic variations as the injection current is increased. This phenomenon is due to an enhancement of the index antiguiding over the gain-guiding mechanism     

A 64-Mb DRAM with meshed power line

A 64-Mb dynamic RAM (DRAM) has been developed with a meshed power line (MPL) and a quasi-distributed sense-amplifier driver (qDSAD) scheme. It realizes high speed, t_RAS=50 ns (typical) at V_cc=3.3 V, and 16-b input/output (I/O). This MPL+qDSAD scheme can reduce sensing delay caused by the metal layer resistance. Furthermore, to suppress crosstalk noise, a V_SS shield peripheral layout scheme has been introduced, which also widens power line widths. This 64-Mb DRAM was fabricated with 0.4-μm CMOS technology using KrF excimer laser lithography. A newly developed memory cell structure, the tunnel-shaped stacked-capacitor cell (TSSC), was adapted to this 64-Mb DRAM     

Thiamine pyrophosphatase activity in the Golgi apparatus of calcitonin-treated osteoclasts.

The thiamine pyrophosphatase (TPPase) activity described by Novikoff and Goldfisher was examined in osteoclasts affected by calcitonin in order to elucidate whether the morphological and functional changes of the osteoclasts have an influence over the secretion function of their Golgi apparatus. The Golgi apparatus of osteoclasts of which the ruffled border had disappeared and bone resorption discontinued as the result of treatment with calcitonin showed a slight TPPase activity. The reaction products of the enzyme in these inactive osteoclasts were distinctly fewer than that of control osteoclasts, which were not affected by calcitonin. From these results, it is suggested that there may be a connection between the morphological and functional changes of osteoclasts and the secretion function of the Golgi apparatus.     

Electrical and optical feedback in an InGaAs/InP light-amplifyingoptical switch (LAOS)

A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR     

A Tuning Circuit with Two Half-Wave Distributed Junctions for All-NbN SIS Mixers

A novel broadband tuning circuit composed of two low-current-density half-wave NbN/MgO/NbN tunnel junctions connected by a half-wave NbN/MgO/NbN microstrip line has been successfully tested in a quasi-optical mixer at frequencies above 700 GHz. The circuit had a designed center frequency of 870 GHz, was integrated in a center-fed twin-slot antenna, and was fed via a quarter-wave impedance transformer. Heterodyne measurments showed double-side-band receiver noise temperatures equivalent to 6-9 quanta from 675 to 810 GHz for a mixer with a current density of 6.7 kA/cm². The RF bandwidth was broader than that of a conventional mixer using a full-wave junction with the same current density.