全文获取类型
收费全文 | 102768篇 |
免费 | 1478篇 |
国内免费 | 1227篇 |
专业分类
电工技术 | 1924篇 |
综合类 | 138篇 |
化学工业 | 10493篇 |
金属工艺 | 5456篇 |
机械仪表 | 3190篇 |
建筑科学 | 2033篇 |
矿业工程 | 159篇 |
能源动力 | 2959篇 |
轻工业 | 6067篇 |
水利工程 | 704篇 |
石油天然气 | 669篇 |
武器工业 | 15篇 |
无线电 | 15942篇 |
一般工业技术 | 21753篇 |
冶金工业 | 25248篇 |
原子能技术 | 1382篇 |
自动化技术 | 7341篇 |
出版年
2022年 | 455篇 |
2021年 | 696篇 |
2020年 | 522篇 |
2019年 | 677篇 |
2018年 | 1129篇 |
2017年 | 1092篇 |
2016年 | 1173篇 |
2015年 | 924篇 |
2014年 | 1489篇 |
2013年 | 4667篇 |
2012年 | 2569篇 |
2011年 | 3841篇 |
2010年 | 3100篇 |
2009年 | 3718篇 |
2008年 | 3893篇 |
2007年 | 4079篇 |
2006年 | 3693篇 |
2005年 | 3326篇 |
2004年 | 3177篇 |
2003年 | 3025篇 |
2002年 | 2670篇 |
2001年 | 2974篇 |
2000年 | 2718篇 |
1999年 | 3075篇 |
1998年 | 9438篇 |
1997年 | 6154篇 |
1996年 | 4761篇 |
1995年 | 3162篇 |
1994年 | 2788篇 |
1993年 | 2723篇 |
1992年 | 1628篇 |
1991年 | 1593篇 |
1990年 | 1518篇 |
1989年 | 1322篇 |
1988年 | 1171篇 |
1987年 | 862篇 |
1986年 | 887篇 |
1985年 | 916篇 |
1984年 | 803篇 |
1983年 | 698篇 |
1982年 | 699篇 |
1981年 | 681篇 |
1980年 | 567篇 |
1979年 | 476篇 |
1978年 | 414篇 |
1977年 | 533篇 |
1976年 | 958篇 |
1975年 | 299篇 |
1974年 | 276篇 |
1973年 | 256篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
121.
122.
The interaction of transient electromagnetic pulse with an air layer in a dielectric medium is formulated in terms of a time-domain integral equation and solved numerically via the method of moments. Previous related works pointed to the inherent inadequacy of the marching-on-in-time method in this case, but suggested no remedy. This paper explains why an implicit modeling scheme would work effectively in this case. It is also noted that the use of an implicit scheme would normally involve a solution of a very large and dense matrix equation. To alleviate this drawback of the implicit scheme, the use of a wavelet-based impedance-matrix-compression technique, which has facilitated in the very recent past solutions of time-domain problems with greater efficiency, is described. 相似文献
123.
Baeyens Y. Georgiou G. Weiner J.S. Leven A. Houtsma V. Paschke P. Lee Q. Kopf R.F. Yang Yang Chua L. Chen C. Liu C.T. Young-Kai Chen 《Solid-State Circuits, IEEE Journal of》2002,37(9):1152-1159
The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product. 相似文献
124.
Passaro V.M.N. Armenise M.N. Nesheva D. Savatinova I.T. Pun E.Y.B. 《Lightwave Technology, Journal of》2002,20(1):71-77
Proton-exchanged planar waveguides have been fabricated on Z-cut and X-cut lithium niobate crystals by using a new proton source formed by a mixture of benzoic and adipic acids. Waveguide index profiles and optical characteristics have been obtained at different values of the adipic-benzoic acid concentration ratio. The samples have been structurally characterized by Raman and infrared (IR) absorption spectroscopy and double-crystal X-ray diffraction. Good quality samples have been fabricated by using 30 mol% ratio dilution, showing very low scattering levels (<0.1 dB/cm), relatively high electrooptic coefficient (r33=0.88 pm/V), and low relative percentage of interstitial protons (26%). The main factor limiting the waveguide optical properties is the substitutional-interstitial proton ratio, which can be easily controlled to produce good quality waveguides. A demonstration of the repeatability of the exchange process in the acid mixture is also provided 相似文献
125.
Investigation into polishing process of CVD diamond films 总被引:1,自引:0,他引:1
A new technique used for polishing chemical vapor deposition (CVD) diamond films has been investigated, by which rough polishing of the CVD diamond films can be achieved efficiently. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then electro-discharge machining (EDM) is used to machine the coated surface. As a result, peaks on the surface of the diamond film are removed rapidly. During machining, graphitization of diamond enables the EDM process to continue. The single pulse discharge shows that the material of the coated layer evidently affects removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of EDM CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed. 相似文献
126.
The theory of characteristic modes for aperture problems is used in this paper to solve the equivalent magnetic current and aperture fields due to a conducting cylinder with multiple slots. It is assumed that these slots are illuminated by either a transverse electric (TE) or a transverse magnetic (TM) plane wave and the media inside and outside the cylinder exhibit different electromagnetic properties. The formulation is given for the general case and numerical results for a limited number of slots are presented 相似文献
127.
128.
129.
A number of checkpointing and message logging algorithms have been proposed to support fault tolerance of mobile computing systems. However, little attention has been paid to the optimistic message logging scheme. Optimistic logging has a lower failure-free operation cost compared to other logging schemes. It also has a lower failure recovery cost compared to the checkpointing schemes. This paper presents an efficient scheme to implement optimistic logging for the mobile computing environment. In the proposed scheme, the task of logging is assigned to the mobile support station so that volatile logging can be utilized. In addition, to reduce the message overhead, the mobile support station takes care of dependency tracking and the potential dependency between mobile hosts is inferred from the dependency between mobile support stations. The performance of the proposed scheme is evaluated by an extensive simulation study. The results show that the proposed scheme requires a small failure-free overhead and the cost of unnecessary rollback caused by the imprecise dependency is adjustable by properly selecting the logging frequency. 相似文献
130.
Yoshitomi T. Saito M. Ohguro T. One M. Momose H.S. Morifuji E. Morimoto T. Katsumata Y. Iwai H. 《Electron Devices, IEEE Transactions on》1998,45(6):1295-1299
A silicided silicon-sidewall source and drain (S4D) structure is proposed for sub-0.1-μm devices. The merit of the S4D structure is that the series resistance of the source and drain is significantly reduced since the silicide layer is attached very close to the gate electrode and the silicon sidewall can be doped very highly. Thus, very high drain current drive can be expected, Another advantage of this structure is that the source and drain extensions are produced by the solid-phase diffusion of boron from the highly doped silicon-sidewall. Thus, shallow extensions with very high doping can be realized. A 75-nm gate length pMOSFET fabricated with this structure is shown to exhibit excellent electrical characteristics 相似文献