Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology

This paper presents results of reliability investigation of 20 V N-Drift MOS transistor in 0.13 μm CMOS technology. Due to high performances required for CMOS applications, adding high voltage devices becomes a big challenge to guarantee the reliability criteria. In this context, new reliability approaches are needed. Safe Operating Area are defined for switch, V_ds limited and V_gs limited applications in order to improve circuit designs. For V_ds limited applications, deep doping dose effects in drift area are investigated in correlation to lifetime evaluations based on device parameter shifts under hot carrier stressing. To further determine the amount and locations of hot carriers injections, accurate 2D technological and electrical simulations are performed and permit to select the best compromise between performance and reliability for N-Drift MOS transistor.     

Fast numerically stable computation of orthogonal Fourier?Mellin moments

An efficient algorithm for the computation of the orthogonal Fourier-Mellin moments (OFMMs) is presented. The proposed method computes the fractional parts of the orthogonal polynomials, which consist of fractional terms, recursively, by eliminating the number of factorial calculations. The recursive computation of the fractional terms makes the overall computation of the OFMMs a very fast procedure in comparison with the conventional direct method. Actually, the computational complexity of the proposed method is linear O(p) in multiplications, with p being the moment order, while the corresponding complexity of the direct method is O(p²). Moreover, this recursive algorithm has better numerical behaviour, as it arrives at an overflow situation much later than the original one and does not introduce any finite precision errors. These are the two major advantages of the algorithm introduced in the current work, establishing the computation of the OFMMs to a very high order as a quite easy and achievable task. Appropriate simulations on images of different sizes justify the superiority of the proposed algorithm over the conventional algorithm currently used     

Reduction of optical beat interference using gain-saturated RSOA in upstream WDM/SCM optical links

A new scheme for reducing optical beat interference (OBI) noise in optical network units is proposed for subcarrier multiplexing-based access network applications. The optical spectrum of the transmit lasers is broadened by using a radio frequency (RF) clipping tone with a modulation depth greater than one. This reduces the impact of the OBI noise. The distortions caused by an RF clipping tone are also suppressed by introducing a gain-saturated reflective optical amplifier, which shows the characteristics of high-pass filter. The proposed scheme has been verified by measuring the error vector magnitude of 16QAM signal with 20 Mbps. Error-free transmission has been achieved even when the light of OBI-noise-causing lasers is stronger than that of the signal laser by 7 dB     

On Routh-Pade model reduction of interval systems

This paper discusses another generalization of the direct Routh table truncation method for interval systems. It is shown that the existing generalization of the direct Routh table truncation fails to produce a stable system, in contradiction to the equivalent result for fixed-coefficients systems. The present method guarantees a stable reduced order model for interval systems as well.     

Effect of strain waveform on creep-fatigue life for Sn–8Zn–3Bi solder

This paper describes the creep‐fatigue life of Sn–8Zn–3Bi under push–pull loading. Creep‐fatigue tests were carried out using Sn–8Zn–3Bi specimens in fast–fast, fast–slow, slow–fast, slow–slow and hold–time strain waveforms. Creep‐fatigue lives in the slow–slow and hold‐time waveforms showed a small reduction from the fast–fast lives but those in the slow–fast and fast–slow waveforms showed a significant reduction from the fast–fast lives. Conventional creep‐fatigue life prediction methods were applied to the experimental data and the applicability of the methods was discussed. Creep‐fatigue characteristics of Sn–8Zn–3Bi were compared with those of Sn–3.5Ag and Sn–37Pb.     

S-N-P curves in 7075 T7351 and 2024 T3 aluminium alloys subjected to surface treatments

The S-N-P (stress, number of cycles, failure probability) curves for 2024 T3 and 7075 T7351 aluminium alloys were obtained. Previously, surface treatments of degreasing and different types of anodizing were applied to samples, evaluating the influence of these treatments on the fatigue life of the alloys. The determination of the S-N-P curves was done using Maennig's method. Rotary fatigue was used because this technique produces greater stress on the sample surfaces, the zone in which it is important to evaluate fatigue resistance. Both the transition range and the finite life range were evaluated, calculating the 1, 50 and 99% fracture probability. SEM was performed in order to characterize the fracture micromechanism. The conclusions were that Maennig's method is useful to evaluate fatigue life of these materials in a fast and efficient manner. Moreover, surface treatments produce a decrease in the fatigue life of both alloys, associating this effect with the surface damage produced on each sample during the treatment.     

A goal-striving life event and the onset of hypomanic and depressive episodes and symptoms: Perspective from the Behavioral Approach System (BAS) dysregulation theory.

On the basis of the behavioral approach system (BAS) dysregulation theory of bipolar disorder, this study examined the relation between occurrence of a BAS activation-relevant life event--goal striving--and onset of hypomanic and depressive episodes and symptoms. In particular, the authors examined the relation between preparing for and completing final exams (a goal-striving event) and onset of bipolar spectrum episodes and symptoms in college students with bipolar II disorder or cyclothymia (i.e., "soft" bipolar spectrum conditions). One hundred fifty-nine individuals with either a bipolar spectrum disorder (n=68) or no major affective psychopathology (controls; n=91) were further classified on the basis of whether they were college students (i.e., completed final exams). Consistent with the BAS dysregulation theory, preparing for and completing final exams was associated with an increase in hypomanic but not depressive episodes and symptoms in individuals with a soft bipolar spectrum diagnosis. Furthermore, self-reported BAS sensitivity moderated the presence of certain hypomanic symptoms during final exams. (PsycINFO Database Record (c) 2010 APA, all rights reserved)